@misc{NoetzoldBragardFinketal.2014,
  author    = {N{\"o}tzold, K. and Bragard, Michael and Fink, K. and Griessel, R. and Wegener, R.},
  title     = {Cascaded H-bridge converter with transformer based cell power balancing in each voltage level : [Patentschrift]},
  publisher = {Europ{\"a}isches Patentamt / United States Patent and Trademark Office [u.a.]},
  address   = {Den Haag / Alexandria, VA},
  pages     = {16 S. : graph. Darst.},
  year      = {2014},
  language  = {en}
}
@inproceedings{BragardRongeDeDoncker2011,
  author    = {Bragard, Michael and Ronge, C. and De Doncker, R. W.},
  title     = {Sandwich design of high-power thyristor based devices with integrated MOSFET structure},
  series = {Proceedings of the 2011 - 14th - European Conference on Power Electronics and Applications (EPE 2011) : Aug. 30, 2011 - Sept. 1, 2011, Birmingham, United Kingdom},
  booktitle = {Proceedings of the 2011 - 14th - European Conference on Power Electronics and Applications (EPE 2011) : Aug. 30, 2011 - Sept. 1, 2011, Birmingham, United Kingdom},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-61284-167-0 (Print)},
  year      = {2011},
  language  = {en}
}
@inproceedings{BragardGottschlichDeDoncker2011,
  author    = {Bragard, Michael and Gottschlich, J. and De Doncker, R. W.},
  title     = {Design and realization of a credit card size driver stage for high power thyristor based devices with integrated MOS structure},
  series = {2011 IEEE 8th International Conference on Power Electronics and ECCE Asia (ICPE \& ECCE 2011) : Jeju, South Korea, 30 May 2011 - 3 June 2011 / [co-sponsored by the Korean Institute of Power Electronics ...]},
  booktitle = {2011 IEEE 8th International Conference on Power Electronics and ECCE Asia (ICPE \& ECCE 2011) : Jeju, South Korea, 30 May 2011 - 3 June 2011 / [co-sponsored by the Korean Institute of Power Electronics ...]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-61284-958-4 (Print)},
  doi       = {10.1109/ICPE.2011.5944661},
  pages     = {1182 -- 1189},
  year      = {2011},
  language  = {en}
}
@article{BragardvanHoekDeDoncker2012,
  author    = {Bragard, Michael and van Hoek, H. and De Doncker, R. W.},
  title     = {A major design step in IETO concept realization that allows overcurrent protection and pushes limits of switching performance},
  series = {IEEE transactions on power electronics},
  volume    = {27},
  journal   = {IEEE transactions on power electronics},
  number    = {9},
  publisher = {IEEE},
  address   = {New York},
  issn      = {0885-8993},
  doi       = {10.1109/TPEL.2012.2189136},
  pages     = {4163 -- 4171},
  year      = {2012},
  abstract  = {This paper presents the latest prototype of the integrated emitter turn-off thyristor concept, which potentially ranks among thyristor high-power devices like the gate turn-off thyristor and the integrated gate-commutated thyristor (IGCT). Due to modifications of the external driver stage and mechanical press-pack design optimization, this prototype allows for full device characterization. The turn-off capability was increased to 1600 A with an active silicon area of 823mm2 . This leads to a transient peak power of 672.1kW/cm² . Within this paper, measurements and concept assessment are presented and a comparison to state-of-the-art IGCT devices is provided.},
  language  = {en}
}
@inproceedings{MagnorSoltauBragardetal.2010,
  author    = {Magnor, D. and Soltau, N. and Bragard, Michael and Schmiegel, A. and De Doncker, R. W. and Sauer, D. U.},
  title     = {Analysis of the model dynamics for the battery and battery converter in a grid-connected 5 kW photovoltaic system},
  series = {Proceedings / 25th European Photovoltaic Solar Energy Conference and Exhibition ; 5th World Conference on Photovoltaic Energy Conversion ; Feria Valencia, Convention \& Exhibition Centre, Valencia, Spain, conference 6 - 10 September 2010, exhibition 6 - 9 September 2010 ; Joint World Conference of: 25th European Photovoltic Solar Energy Conference and Exhibition, 36th US IEEE Photovoltaic Specialists Conference, 20th Asia/Pacific PV Science and Engineering Conference},
  booktitle = {Proceedings / 25th European Photovoltaic Solar Energy Conference and Exhibition ; 5th World Conference on Photovoltaic Energy Conversion ; Feria Valencia, Convention \& Exhibition Centre, Valencia, Spain, conference 6 - 10 September 2010, exhibition 6 - 9 September 2010 ; Joint World Conference of: 25th European Photovoltic Solar Energy Conference and Exhibition, 36th US IEEE Photovoltaic Specialists Conference, 20th Asia/Pacific PV Science and Engineering Conference},
  editor    = {de Santi, Giovanni Frederigo},
  publisher = {WIP Renewable Energies},
  address   = {[M{\"u}nchen]},
  isbn      = {3-936338-26-4 (DVD-ROM)},
  year      = {2010},
  language  = {en}
}
@phdthesis{Bragard2012,
  author    = {Bragard, Michael},
  title     = {The integrated emitter turn-off thyristor : an innovative MOS-gated high-power device. - (Aachener Beitr{\"a}ge des ISEA ; 62)},
  publisher = {Shaker},
  address   = {Aachen},
  isbn      = {978-3-8440-1152-4},
  pages     = {III, 164 S. : Ill., graph. Darst.},
  year      = {2012},
  abstract  = {This thesis introduces the Integrated Emitter Turn-Off (IETO) Thyristor as a new high-power device. Known state-of-the-art research activities like the Dual GCT, the ETO thyristor and the ICT were presented and critically reviewed. A comparison with commercialized solutions identifies the pros and cons of each type of device family. Based on this analysis, the IETO structure is proposed, covering most benefits of each device class. In particular the combination of a MOS-assisted turn-off with a thyristor-based device allows a voltage-controlled MOS switching and the low on-state voltage of the thyristors. The following synthesis of an IETO device stands on a three-dimensional field of optimization spanned by electric, mechanical and thermal aspects. From an electric point of view, the lowest possible parasitic inductance and resistance within the commutation path are optimization criteria. The mechanical construction has to withstand the required contact pressure of multiple kilo Newtons. Finally, thermal borders limit the maximum average current of the device. FEM simulations covering these three aspects are performed for several design proposals. An IETO prototype is constructed and measurements on various test benches attest thermal, mechanical and electric performance. A local decoupling of the external driver stage and the presspack housing is presented by a cable connection. This separation enables a thermal and mechanical independence, which is advantageous in terms of vibrations and thermal cycles including increased reliability. The electric pulse performance of the prototype device is a factor of 3.1 above today''s solutions. In single-pulse measurements, a current up to 1600 A was successfully turned off at 115°C with an active silicon area of 823 mm². One reason for this increased turn-off capability is the extremely low-inductive construction. Additional functionality of the IETO thyristor like over-current self-protection and defined short-circuit failure state are successfully verified.},
  language  = {en}
}
@inproceedings{NoetzoldUphuesWegeneretal.2013,
  author    = {N{\"o}tzold, K. and Uphues, A. and Wegener, R. and Fink, K. and Bragard, Michael and Griessel, R. and Soter, S.},
  title     = {Inverter based test setup for LVRT verification of a full-scale 2 MW wind power converter},
  series = {15th European Conference on Power Electronics and Applications (EPE), 2013 : 2 - 6 Sept. 2013, Lille, France / [EPE Association; PELS, IEEE Power Electronics Society]},
  booktitle = {15th European Conference on Power Electronics and Applications (EPE), 2013 : 2 - 6 Sept. 2013, Lille, France / [EPE Association; PELS, IEEE Power Electronics Society]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-4799-0115-9 (Online-Ausg.)},
  doi       = {10.1109/EPE.2013.6634752},
  pages     = {1037 -- 1042},
  year      = {2013},
  language  = {en}
}
@inproceedings{NoetzoldUphuesWegeneretal.2012,
  author    = {N{\"o}tzold, K. and Uphues, A. and Wegener, R. and Soter, S. and Fink, K. and Bragard, Michael and Griessel, R.},
  title     = {Inverter based test setup for LVRT verification of a full-scale 2 MW wind power converter},
  series = {EPE Joint Wind Energy and T\&D Chapters Seminar : 28th and 29th of June 2012, in the Utzon Centre, Aalborg, Denmark ; papers, posters, presentations. - Session 2: Grid connection, compliance},
  booktitle = {EPE Joint Wind Energy and T\&D Chapters Seminar : 28th and 29th of June 2012, in the Utzon Centre, Aalborg, Denmark ; papers, posters, presentations. - Session 2: Grid connection, compliance},
  publisher = {EPE Association},
  address   = {Brussels},
  year      = {2012},
  language  = {en}
}
@inproceedings{KoellenspergerBragardPlumetal.2007,
  author    = {K{\"o}llensperger, P. and Bragard, Michael and Plum, T. and De Doncker, R. W.},
  title     = {The dual GCT : a new high-power device using optimized GCT technology},
  series = {Conference record of the 2007 IEEE Industry Applications Conference : 42. IAS annual meeting ; September 23 - 27, 2007, New Orleans, Louisiana, USA},
  booktitle = {Conference record of the 2007 IEEE Industry Applications Conference : 42. IAS annual meeting ; September 23 - 27, 2007, New Orleans, Louisiana, USA},
  publisher = {IEEE Operations Center},
  address   = {Piscataway, NJ},
  isbn      = {978-1-4244-1260-0 (Online)},
  doi       = {10.1109/07IAS.2007.76},
  pages     = {358 -- 365},
  year      = {2007},
  language  = {en}
}
@article{KoellenspergerBragardPlumetal.2009,
  author    = {K{\"o}llensperger, P. and Bragard, Michael and Plum, T. and De Doncker, R. W.},
  title     = {The dual GCT : new high-power device using optimized GCT technology},
  series = {IEEE transactions on industry applications},
  volume    = {45},
  journal   = {IEEE transactions on industry applications},
  number    = {5},
  issn      = {0093-9994},
  doi       = {10.1109/TIA.2009.2027364},
  pages     = {1754 -- 1762},
  year      = {2009},
  language  = {en}
}