@article{DarmoSchaefferFoersteretal.2000, author = {Darmo, J. and Sch{\"a}ffer, F. and F{\"o}rster, Arnold and Kordos, P.}, title = {Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range}, series = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]}, journal = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {0780359399}, pages = {147 -- 150}, year = {2000}, language = {en} } @article{FoersterBetkoKordosetal.1994, author = {F{\"o}rster, Arnold and Betko, J. and Kordos, P. and Kuklovsky, S.}, title = {Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. F{\"o}rster ...}, series = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, journal = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, isbn = {0921-5107}, pages = {147 -- 150}, year = {1994}, language = {en} } @article{FoersterDarmoDubeckyetal.1998, author = {F{\"o}rster, Arnold and Darmo, J. and Dubecky, F. and Kordos, P.}, title = {Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; F{\"o}rster, A.}, series = {Applied Physics Letters. 72 (1998), H. 5}, journal = {Applied Physics Letters. 72 (1998), H. 5}, isbn = {1077-3118}, pages = {590 -- 592}, year = {1998}, language = {en} } @article{FoersterDarmoDubeckyetal.1996, author = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.}, title = {Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. F{\"o}rster}, series = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]}, journal = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]}, address = {Piscataway, NJ [u.a.]}, isbn = {0-7803-3095-1}, pages = {67 -- ff.}, year = {1996}, language = {en} } @article{FoersterDarmoDubeckyetal.1994, author = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.}, title = {Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubeck{\´y} ; P. Kordos ; A. F{\"o}rster ...}, series = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, journal = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, isbn = {0921-5107}, pages = {393 -- 396}, year = {1994}, language = {en} } @article{FoersterDarmoSchaferetal.2002, author = {F{\"o}rster, Arnold and Darmo, J. and Schafer, F. and Kordos, P.}, title = {Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R}, series = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza}, journal = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-7276-X}, pages = {87 -- 90}, year = {2002}, language = {en} } @article{FoersterKordosBetko1995, author = {F{\"o}rster, Arnold and Kordos, P. and Betko, J.}, title = {Semi-insulating GaAs layers grown by molecular-beam epitaxy / P. Kordos ; A. F{\"o}rster ; J. Betko ...}, series = {Applied physics letters. 67 (1995), H. 7}, journal = {Applied physics letters. 67 (1995), H. 7}, isbn = {0003-6951}, pages = {983 -- 985}, year = {1995}, language = {en} } @article{FoersterKordosBetko1995, author = {F{\"o}rster, Arnold and Kordos, P. and Betko, J.}, title = {Electrical and structural characterization of MBE GaAs grown at temperatures between 200 and 600 °C / P. Kordos ; J. Betko; A. F{\"o}rster ...}, series = {Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)}, journal = {Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)}, publisher = {Institute of Physics}, address = {Bristol [u.a.]}, isbn = {0-7503-0226-7}, pages = {295 -- ff.}, year = {1995}, language = {en} } @article{FoersterKordosMarso1997, author = {F{\"o}rster, Arnold and Kordos, P. and Marso, M.}, title = {Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs / P. Kordos ; M. Marso, ; A. F{\"o}rster ...}, series = {Applied physics letters. 71 (1997), H. 8}, journal = {Applied physics letters. 71 (1997), H. 8}, isbn = {0003-6951}, pages = {1118 -- 1120}, year = {1997}, language = {en} } @article{FoersterKordosMarsoetal.1998, author = {F{\"o}rster, Arnold and Kordos, P. and Marso, M. and R{\"u}ders, F.}, title = {550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs. Kordos, P., F{\"o}rster, A.; Marso, M.; R{\"u}ders, F.}, series = {Electronics Letters. 34 (1998), H. 1}, journal = {Electronics Letters. 34 (1998), H. 1}, isbn = {1350-911X}, pages = {119 -- 120}, year = {1998}, language = {en} }