TY  - CHAP
A1  - Butenweg, Christoph
A1  - Thierauf, Georg
T1  - Optimum design of reinforced concrete structures
T2  - Advances in computational structural mechanics : this volume contains a selection of papers presented at The First International Conference on Engineering Computational Technology and The Fourth International Conference on Computational Structures Technology, held in Edinburgh from 18-21 August 1998 / edited by B. H. V. Topping
Y1  - 1998
SN  - 0-948749-57-1
SP  - 447
EP  - 458
PB  - Civil-Comp Press
CY  - Edinburgh
ER  - 
TY  - CHAP
A1  - Dören, Horst-Peter
T1  - Aktuelle Fragen zur Schweißmetallurgie. Neue Werkstoffe und ihre schweißtechnische Verarbeitung = Current questions on welding metallurgy
T2  - Jahrbuch Schweißtechnik '99
Y1  - 1998
SN  - 3-87155-745-5
SP  - 77
EP  - 85
PB  - DVS-Verlag
CY  - Düsseldorf
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Darmo, J.
A1  - Dubecky, F.
A1  - Kordos, P.
T1  - Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; Förster, A.
JF  - Applied Physics Letters. 72 (1998), H. 5
Y1  - 1998
SN  - 1077-3118
SP  - 590
EP  - 592
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Döhler, G. H
A1  - Heber, J.
T1  - Hot electrons in n-i-p.i-based devices / G. H. Döhler ; J. Heber ... A. Förster ...
JF  - Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)
Y1  - 1998
SN  - 0-19-850058-0
SP  - 478
EP  - 504
PB  - Clarendon Press
CY  - Oxford
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Griebel, M.
A1  - Indlekofer, K. M.
A1  - Lüth, H.
T1  - Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer,  K. M.; Förster, A.; Lüth, H.
JF  - Journal of Applied Physics. 84 (1998), H. 12
Y1  - 1998
SN  - 1089-7550
SP  - 6719
EP  - 6724
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Griebel, M.
A1  - Indlekofer, M.
A1  - Lüth, H.
T1  - Transport through a buried double barrier single electron transistor at low temperatures
JF  - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4
Y1  - 1998
SN  - 1386-9477
SP  - 502
EP  - 506
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Hartmann, A.
A1  - Dieker, Ch.
A1  - Hollfelder, M.
T1  - Spontaneous formation of tilted AlGaAS/GaAs superlattice during AlGaAs growth. Hartmann, A.; Dieker, Ch.; Hollfelder, M.; Hardtdegen, H.; Förster, A.; Lüth, H.
JF  - Applied Surface Science. 123-124 (1998)
Y1  - 1998
SN  - 0169-4332
N1  - = Proceedings of the Sixth International Conference on the Formation of Semiconductor Interfaces
SP  - 704
EP  - 709
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Hauke, M.
A1  - Jakumeit, J.
A1  - Krafft, B.
T1  - DX Centers in Al0.3Ga0.7As/GaAs Analyzed by Point Contact Measurements. Hauke, M.; Jakumeit, J.; Krafft, B.; Nimtz, G.; Förster, A.; Lüth, H.
JF  - Journal of Applied Physics. 84 (1998), H. 4
Y1  - 1998
SN  - 1089-7550
SP  - 2034
EP  - 2039
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Marso, M.
A1  - Rüders, F.
T1  - 550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs.  Kordos, P., Förster, A.; Marso, M.; Rüders, F.
JF  - Electronics Letters. 34 (1998), H. 1
Y1  - 1998
SN  - 1350-911X
SP  - 119
EP  - 120
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lachenmann, S. G.
A1  - Kastalsky, A.
A1  - Uhlisch, D.
T1  - Hybrid superconductor/semiconductor step junction with three terminals. Lachenmann, S. G.; Kastalsky, A.; Förster A.; Uhlisch, D.; Neurohr, K.; Schäpers, Th.
JF  - Journal of Applied Physics. 83 (1998), H. 12
Y1  - 1998
SN  - 1089-7550
SP  - 8077
EP  - 8079
ER  -