TY  - JOUR
A1  - Förster, Arnold
A1  - Tillmann, K.
A1  - Gerthsen, D.
A1  - Pfundstein, P.
T1  - Structural transformations and strain relaxation mechanisms of In0.6Ga0.4As islands grown by molecular beam epitaxy on GaAs(001) substrates / Tillmann, K. ; Gerthsen, D. ; Pfundstein, P. ; Förster, A. ; Urban, K.
T2  - Journal of applied physics. 78 (1995), H. 6
Y1  - 1995
UR  - https://opus.bibliothek.fh-aachen.de/opus4/frontdoor/index/index/docId/2766
SN  - 0021-8979
SP  - 3824
EP  - 3832
ER  -