@article{VitusevichFoersterIndlekoferetal.2000, author = {Vitusevich, S. A. and F{\"o}rster, Arnold and Indlekofer, K.-M. and L{\"u}th, H. and Belyaev, A. E. and Glavin, B. A. and Konakova, R. V.}, title = {Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes}, series = {Physical Review . B. 61 (2000), H. 16}, journal = {Physical Review . B. 61 (2000), H. 16}, isbn = {1550-235X}, pages = {10898 -- 10904}, year = {2000}, language = {en} } @article{TillmannFoerster2000, author = {Tillmann, K. and F{\"o}rster, Arnold}, title = {Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)}, series = {Thin Solid Films. 368 (2000), H. 1}, journal = {Thin Solid Films. 368 (2000), H. 1}, isbn = {0040-6090}, pages = {93 -- 104}, year = {2000}, language = {en} } @article{VitusevichFoersterReetzetal.2000, author = {Vitusevich, S. A. and F{\"o}rster, Arnold and Reetz, W. and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V.}, title = {Spectral Responsivity of single-quantum-well photodetectors}, series = {Applied Physics Letters. 77 (2000), H. 1}, journal = {Applied Physics Letters. 77 (2000), H. 1}, isbn = {1077-3118}, pages = {16 -- 18}, year = {2000}, language = {en} } @article{MikulicsMarsoCamaraMayorgaetal.2005, author = {Mikulics, M. and Marso, M. and C{\´a}mara Mayorga, I. and Gusten, R. and Stancek, S. and Michael, E. A. and Schieder, R. and Wolter, M. and Buca, D. and F{\"o}rster, Arnold and Kordos, P. and L{\"u}th, H.}, title = {Photomixers fabricated on nitrogen-ion-implanted GaAs}, series = {Applied physics letters. 87 (2005)}, journal = {Applied physics letters. 87 (2005)}, pages = {041106-1 -- 041106-3}, year = {2005}, language = {en} } @inproceedings{FoersterStockMontanarietal.2006, author = {F{\"o}rster, Arnold and Stock, J{\"u}rgen and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans}, title = {Fabrication and characterisation of GaAs Gunn Diode Chips for applications at 77 GHz in automotive industry}, url = {http://nbn-resolving.de/urn:nbn:de:hbz:a96-opus-1462}, year = {2006}, abstract = {GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.}, subject = {Biosensor}, language = {en} }