@article{FoersterLueth1989,
  author    = {F{\"o}rster, Arnold and L{\"u}th, H.},
  title     = {Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces},
  series = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 7 (1989), H. 4},
  journal   = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 7 (1989), H. 4},
  isbn      = {1071-1023},
  pages     = {720 -- 724},
  year      = {1989},
  language  = {en}
}
@article{FoersterLayetLueth1989,
  author    = {F{\"o}rster, Arnold and Layet, J. M. and L{\"u}th, H.},
  title     = {Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy},
  series = {Applied Surface Science. 41 - 42 (1989)},
  journal   = {Applied Surface Science. 41 - 42 (1989)},
  isbn      = {0169-4332},
  pages     = {306 -- 311},
  year      = {1989},
  language  = {en}
}
@article{FoersterTulkeLueth1987,
  author    = {F{\"o}rster, Arnold and Tulke, A. and L{\"u}th, H.},
  title     = {The Schottky barrier at the InSb(110)-Sn interface},
  series = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 5 (1987), H. 4},
  journal   = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 5 (1987), H. 4},
  isbn      = {1071-1023},
  pages     = {1054 -- 1056},
  year      = {1987},
  language  = {en}
}
@article{FoersterRizziLueth1989,
  author    = {F{\"o}rster, Arnold and Rizzi, Angela and L{\"u}th, H.},
  title     = {Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. F{\"o}rster ; H. L{\"u}th},
  series = {Surface Science. 211 - 212 (1989)},
  journal   = {Surface Science. 211 - 212 (1989)},
  isbn      = {0039-6028},
  pages     = {620 -- 629},
  year      = {1989},
  language  = {en}
}
@article{FoersterLueth1987,
  author    = {F{\"o}rster, Arnold and L{\"u}th, H.},
  title     = {Investigation of the InSb(110)-Sn schottky barrier by means of electron energy loss spectroscopy},
  series = {Surface Science. 189-190 (1987)},
  journal   = {Surface Science. 189-190 (1987)},
  isbn      = {0039-6028},
  pages     = {307 -- 314},
  year      = {1987},
  language  = {en}
}
@article{FoersterSpitzerLueth1986,
  author    = {F{\"o}rster, Arnold and Spitzer, A. and L{\"u}th, H.},
  title     = {The adsorption of fluor-carbon complexes on GaAs(110) studied by electron energy loss spectroscopy},
  series = {Surface Science. 172 (1986), H. 1},
  journal   = {Surface Science. 172 (1986), H. 1},
  isbn      = {0039-6028},
  pages     = {174 -- 182},
  year      = {1986},
  language  = {en}
}
@article{FoersterGriebelIndlekoferetal.1998,
  author    = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, M. and L{\"u}th, H.},
  title     = {Transport through a buried double barrier single electron transistor at low temperatures},
  series = {Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4},
  journal   = {Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4},
  isbn      = {1386-9477},
  pages     = {502 -- 506},
  year      = {1998},
  language  = {en}
}
@article{VitusevichFoersterReetzetal.2000,
  author    = {Vitusevich, S. A. and F{\"o}rster, Arnold and Reetz, W. and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V.},
  title     = {Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode},
  series = {Nanotechnology. 11 (2000), H. 4},
  journal   = {Nanotechnology. 11 (2000), H. 4},
  isbn      = {1361-6528},
  pages     = {305 -- 308},
  year      = {2000},
  language  = {en}
}
@article{SchmidtTonnesmannFoersteretal.2000,
  author    = {Schmidt, R. and Tonnesmann, A. and F{\"o}rster, Arnold and Grimm, M. and Kordos, P. and L{\"u}th, H.},
  title     = {Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer},
  series = {8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society},
  journal   = {8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society},
  publisher = {IEEE Operations Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-6550-X},
  pages     = {95 -- 98},
  year      = {2000},
  language  = {en}
}
@article{FoersterGriebelIndlekoferetal.1999,
  author    = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, K.M. and L{\"u}th, H.},
  title     = {Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; F{\"o}rster, A.; L{\"u}th, H.},
  series = {Journal of Physics D: Applied Physics. 32 (1999), H. 14},
  journal   = {Journal of Physics D: Applied Physics. 32 (1999), H. 14},
  isbn      = {1361-6463},
  pages     = {1729 -- 1733},
  year      = {1999},
  language  = {en}
}