@article{FoersterBetkoKordosetal.1994,
  author    = {F{\"o}rster, Arnold and Betko, J. and Kordos, P. and Kuklovsky, S.},
  title     = {Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. F{\"o}rster ...},
  series = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3},
  journal   = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3},
  isbn      = {0921-5107},
  pages     = {147 -- 150},
  year      = {1994},
  language  = {en}
}
@article{FoersterKordosBetko1995,
  author    = {F{\"o}rster, Arnold and Kordos, P. and Betko, J.},
  title     = {Electrical and structural characterization of MBE GaAs grown at temperatures between 200 and 600 °C / P. Kordos ; J. Betko; A. F{\"o}rster ...},
  series = {Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)},
  journal   = {Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)},
  publisher = {Institute of Physics},
  address   = {Bristol [u.a.]},
  isbn      = {0-7503-0226-7},
  pages     = {295 -- ff.},
  year      = {1995},
  language  = {en}
}
@article{FoersterDarmoDubeckyetal.1994,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.},
  title     = {Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubeck{\´y} ; P. Kordos ; A. F{\"o}rster ...},
  series = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3},
  journal   = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3},
  isbn      = {0921-5107},
  pages     = {393 -- 396},
  year      = {1994},
  language  = {en}
}
@article{DarmoSchaefferFoersteretal.2000,
  author    = {Darmo, J. and Sch{\"a}ffer, F. and F{\"o}rster, Arnold and Kordos, P.},
  title     = {Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range},
  series = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]},
  journal   = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {0780359399},
  pages     = {147 -- 150},
  year      = {2000},
  language  = {en}
}
@article{FoersterDarmoDubeckyetal.1998,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Dubecky, F. and Kordos, P.},
  title     = {Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; F{\"o}rster, A.},
  series = {Applied Physics Letters. 72 (1998), H. 5},
  journal   = {Applied Physics Letters. 72 (1998), H. 5},
  isbn      = {1077-3118},
  pages     = {590 -- 592},
  year      = {1998},
  language  = {en}
}
@article{FoersterDarmoDubeckyetal.1996,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.},
  title     = {Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. F{\"o}rster},
  series = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]},
  journal   = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]},
  address   = {Piscataway, NJ [u.a.]},
  isbn      = {0-7803-3095-1},
  pages     = {67 -- ff.},
  year      = {1996},
  language  = {en}
}
@article{HodelOrzatiMarsoetal.2000,
  author    = {Hodel, U. and Orzati, A. and Marso, M. and Homann, O. and Fox, A. and Hart, A. v. d. and F{\"o}rster, Arnold and Kordos, P. and L{\"u}th, H.},
  title     = {A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver},
  series = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials},
  journal   = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials},
  publisher = {IEEE Service Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-6320-5},
  pages     = {466 -- 469},
  year      = {2000},
  language  = {en}
}
@article{FoersterKordosMarsoetal.1998,
  author    = {F{\"o}rster, Arnold and Kordos, P. and Marso, M. and R{\"u}ders, F.},
  title     = {550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs. Kordos, P., F{\"o}rster, A.; Marso, M.; R{\"u}ders, F.},
  series = {Electronics Letters. 34 (1998), H. 1},
  journal   = {Electronics Letters. 34 (1998), H. 1},
  isbn      = {1350-911X},
  pages     = {119 -- 120},
  year      = {1998},
  language  = {en}
}