@article{MiyamotoSekiWagneretal.2014,
  author    = {Miyamoto, K. and Seki, K. and Wagner, Torsten and Sch{\"o}ning, Michael Josef and Yoshinobu, T.},
  title     = {Enhancement of the spatial resolution of the chemical imaging sensor by a hybrid fiber-optic illumination},
  series = {Procedia Engineering},
  volume    = {87},
  journal   = {Procedia Engineering},
  publisher = {Elsevier},
  address   = {Amsterdam},
  issn      = {1877-7058},
  doi       = {10.1016/j.proeng.2014.11.563},
  pages     = {612 -- 615},
  year      = {2014},
  abstract  = {The chemical imaging sensor, which is based on the principle of the light-addressable potentiometric sensor (LAPS), is a powerful tool to visualize the spatial distribution of chemical species on the sensor surface. The spatial resolution of this sensor depends on the diffusion of photocarriers excited by a modulated light. In this study, a novel hybrid fiber-optic illumination was developed to enhance the spatial resolution. It consists of a modulated light probe to generate a photocurrent signal and a ring of constant light, which suppresses the lateral diffusion of minority carriers excited by the modulated light. It is demonstrated that the spatial resolution was improved from 92 μm to 68 μm.},
  language  = {en}
}
@inproceedings{KernBraun2014,
  author    = {Kern, Alexander and Braun, Christian},
  title     = {Risk management according to IEC 62305-2 edition 2: 2010-12 assessment of structures with a risk of explosion},
  series = {2014 International Conference on Lightning Protection (ICLP), Shanghai, China},
  booktitle = {2014 International Conference on Lightning Protection (ICLP), Shanghai, China},
  organization    = {International Conference on Lightning Protection <2014, Shanghai>},
  pages     = {1237 -- 1242},
  year      = {2014},
  abstract  = {Risk management for structures with a risk of explosion should be considered very carefully when performing a risk analysis according to IEC 62305-2. In contrast to the 2006 edition of the standard, the 2010 edition describes the topic "Structures with a risk of explosion" in more detail. Moreover, in Germany separate procedures and parameters are defined for the risk analysis of structures with a risk of explosion (Supplement 3 of the German DIN EN 62305-2 standard). This paper describes the contents and the relevant calculations of this Supplement 3, together with a numerical example.},
  language  = {en}
}
@inproceedings{RousseauKern2014,
  author    = {Rousseau, Alain and Kern, Alexander},
  title     = {How to deal with environmental risk in IEC 62305-2},
  series = {2014 International Conference on Lightning Protection (ICLP), Shanghai, China},
  booktitle = {2014 International Conference on Lightning Protection (ICLP), Shanghai, China},
  organization    = {International Conference on Lightning Protection <2014, Shanghai>},
  pages     = {521 -- 527},
  year      = {2014},
  abstract  = {The 2nd edition of the lightning risk management standard (IEC 62305-2) considers structures, which may endanger environment. In these cases, the loss is not limited to the structure itself, which is valid for usual structures. In the past (Edition 1) this danger was simply taken into account by a special hazard factor, multiplying the existing risk for the structure with a number. Now, in the edition 2, we add to the risk for the structure itself a "second risk" due to the losses outside the structure. The losses outside can be treated independently from what occurs inside. This is a major advantage to analyze the risk for sensitive structures, like chemical plants, nuclear plants, or structures containing explosives, etc. In this paper, the existing procedure given by the European version EN 62305-2 Ed.2 is further developed and applied to a few structures.},
  language  = {en}
}
@phdthesis{Bragard2012,
  author    = {Bragard, Michael},
  title     = {The integrated emitter turn-off thyristor : an innovative MOS-gated high-power device. - (Aachener Beitr{\"a}ge des ISEA ; 62)},
  publisher = {Shaker},
  address   = {Aachen},
  isbn      = {978-3-8440-1152-4},
  pages     = {III, 164 S. : Ill., graph. Darst.},
  year      = {2012},
  abstract  = {This thesis introduces the Integrated Emitter Turn-Off (IETO) Thyristor as a new high-power device. Known state-of-the-art research activities like the Dual GCT, the ETO thyristor and the ICT were presented and critically reviewed. A comparison with commercialized solutions identifies the pros and cons of each type of device family. Based on this analysis, the IETO structure is proposed, covering most benefits of each device class. In particular the combination of a MOS-assisted turn-off with a thyristor-based device allows a voltage-controlled MOS switching and the low on-state voltage of the thyristors. The following synthesis of an IETO device stands on a three-dimensional field of optimization spanned by electric, mechanical and thermal aspects. From an electric point of view, the lowest possible parasitic inductance and resistance within the commutation path are optimization criteria. The mechanical construction has to withstand the required contact pressure of multiple kilo Newtons. Finally, thermal borders limit the maximum average current of the device. FEM simulations covering these three aspects are performed for several design proposals. An IETO prototype is constructed and measurements on various test benches attest thermal, mechanical and electric performance. A local decoupling of the external driver stage and the presspack housing is presented by a cable connection. This separation enables a thermal and mechanical independence, which is advantageous in terms of vibrations and thermal cycles including increased reliability. The electric pulse performance of the prototype device is a factor of 3.1 above today''s solutions. In single-pulse measurements, a current up to 1600 A was successfully turned off at 115°C with an active silicon area of 823 mm². One reason for this increased turn-off capability is the extremely low-inductive construction. Additional functionality of the IETO thyristor like over-current self-protection and defined short-circuit failure state are successfully verified.},
  language  = {en}
}
@inproceedings{MagnorSoltauBragardetal.2010,
  author    = {Magnor, D. and Soltau, N. and Bragard, Michael and Schmiegel, A. and De Doncker, R. W. and Sauer, D. U.},
  title     = {Analysis of the model dynamics for the battery and battery converter in a grid-connected 5 kW photovoltaic system},
  series = {Proceedings / 25th European Photovoltaic Solar Energy Conference and Exhibition ; 5th World Conference on Photovoltaic Energy Conversion ; Feria Valencia, Convention \& Exhibition Centre, Valencia, Spain, conference 6 - 10 September 2010, exhibition 6 - 9 September 2010 ; Joint World Conference of: 25th European Photovoltic Solar Energy Conference and Exhibition, 36th US IEEE Photovoltaic Specialists Conference, 20th Asia/Pacific PV Science and Engineering Conference},
  booktitle = {Proceedings / 25th European Photovoltaic Solar Energy Conference and Exhibition ; 5th World Conference on Photovoltaic Energy Conversion ; Feria Valencia, Convention \& Exhibition Centre, Valencia, Spain, conference 6 - 10 September 2010, exhibition 6 - 9 September 2010 ; Joint World Conference of: 25th European Photovoltic Solar Energy Conference and Exhibition, 36th US IEEE Photovoltaic Specialists Conference, 20th Asia/Pacific PV Science and Engineering Conference},
  editor    = {de Santi, Giovanni Frederigo},
  publisher = {WIP Renewable Energies},
  address   = {[M{\"u}nchen]},
  isbn      = {3-936338-26-4 (DVD-ROM)},
  year      = {2010},
  language  = {en}
}
@article{BragardvanHoekDeDoncker2012,
  author    = {Bragard, Michael and van Hoek, H. and De Doncker, R. W.},
  title     = {A major design step in IETO concept realization that allows overcurrent protection and pushes limits of switching performance},
  series = {IEEE transactions on power electronics},
  volume    = {27},
  journal   = {IEEE transactions on power electronics},
  number    = {9},
  publisher = {IEEE},
  address   = {New York},
  issn      = {0885-8993},
  doi       = {10.1109/TPEL.2012.2189136},
  pages     = {4163 -- 4171},
  year      = {2012},
  abstract  = {This paper presents the latest prototype of the integrated emitter turn-off thyristor concept, which potentially ranks among thyristor high-power devices like the gate turn-off thyristor and the integrated gate-commutated thyristor (IGCT). Due to modifications of the external driver stage and mechanical press-pack design optimization, this prototype allows for full device characterization. The turn-off capability was increased to 1600 A with an active silicon area of 823mm2 . This leads to a transient peak power of 672.1kW/cm² . Within this paper, measurements and concept assessment are presented and a comparison to state-of-the-art IGCT devices is provided.},
  language  = {en}
}
@inproceedings{BragardGottschlichDeDoncker2011,
  author    = {Bragard, Michael and Gottschlich, J. and De Doncker, R. W.},
  title     = {Design and realization of a credit card size driver stage for high power thyristor based devices with integrated MOS structure},
  series = {2011 IEEE 8th International Conference on Power Electronics and ECCE Asia (ICPE \& ECCE 2011) : Jeju, South Korea, 30 May 2011 - 3 June 2011 / [co-sponsored by the Korean Institute of Power Electronics ...]},
  booktitle = {2011 IEEE 8th International Conference on Power Electronics and ECCE Asia (ICPE \& ECCE 2011) : Jeju, South Korea, 30 May 2011 - 3 June 2011 / [co-sponsored by the Korean Institute of Power Electronics ...]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-61284-958-4 (Print)},
  doi       = {10.1109/ICPE.2011.5944661},
  pages     = {1182 -- 1189},
  year      = {2011},
  language  = {en}
}
@inproceedings{BragardRongeDeDoncker2011,
  author    = {Bragard, Michael and Ronge, C. and De Doncker, R. W.},
  title     = {Sandwich design of high-power thyristor based devices with integrated MOSFET structure},
  series = {Proceedings of the 2011 - 14th - European Conference on Power Electronics and Applications (EPE 2011) : Aug. 30, 2011 - Sept. 1, 2011, Birmingham, United Kingdom},
  booktitle = {Proceedings of the 2011 - 14th - European Conference on Power Electronics and Applications (EPE 2011) : Aug. 30, 2011 - Sept. 1, 2011, Birmingham, United Kingdom},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-61284-167-0 (Print)},
  year      = {2011},
  language  = {en}
}
@article{BragardConradvanHoeketal.2011,
  author    = {Bragard, Michael and Conrad, M. and van Hoek, H. and De Doncker, R. W.},
  title     = {The integrated emitter turn-off thyristor (IETO) : an innovative thyristor-based high power semiconductor device using MOS assisted turn-off},
  series = {IEEE transactions on industry applications},
  volume    = {47},
  journal   = {IEEE transactions on industry applications},
  number    = {5},
  publisher = {IEEE},
  address   = {New York},
  issn      = {0093-9994},
  doi       = {10.1109/TIA.2011.2161432},
  pages     = {2175 -- 2182},
  year      = {2011},
  language  = {en}
}
@inproceedings{BragardConradDeDoncker2010,
  author    = {Bragard, Michael and Conrad, M. and De Doncker, R. W.},
  title     = {The integrated emitter turn-off thyristor (IETO) : an innovative thyristor based high power semiconductor device using MOS assisted turn-off},
  series = {2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]},
  booktitle = {2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-4244-5286-6 (Print)},
  doi       = {10.1109/ECCE.2010.5618410},
  pages     = {4551 -- 4557},
  year      = {2010},
  language  = {en}
}