@article{FoersterBruggerMeiners1991,
  author    = {F{\"o}rster, Arnold and Brugger, H. and Meiners, U.},
  title     = {High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. W{\"o}lk ... A. F{\"o}rster ...},
  series = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman},
  journal   = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman},
  publisher = {Inst. of Electrical and Electronics Engineers},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-0491-8},
  pages     = {39 -- ff.},
  year      = {1991},
  language  = {en}
}
@article{FoersterHuVerghese1996,
  author    = {F{\"o}rster, Arnold and Hu, Quing and Verghese, S.},
  title     = {High-frequency (f ~ 1 THz) studies of quantum-effect devices / Qing Hu ; S. Verghese ; R. A. Wyss ... A. F{\"o}rster},
  series = {Semiconductor science and technology. 11 (1996), H. 12},
  journal   = {Semiconductor science and technology. 11 (1996), H. 12},
  isbn      = {1361-6641},
  pages     = {1888 -- 1894},
  year      = {1996},
  language  = {en}
}
@article{Mohnke1987,
  author    = {Mohnke, Andreas},
  title     = {High-rate sputtering of zinc oxide with a funnel-shaped magnetic field: Effect of the target thickness on the layer properties},
  series = {Vakuum-Technik. 36 (1987), H. 5},
  journal   = {Vakuum-Technik. 36 (1987), H. 5},
  isbn      = {0042-2266},
  pages     = {148 -- 151},
  year      = {1987},
  language  = {en}
}
@article{KollerStellberg1987,
  author    = {Koller, R. and Stellberg, Michael},
  title     = {Hilfsmittel zum systematischen Konstruieren : Ordnen von Spannverbindungen},
  series = {Industrie-Anzeiger. Bd. 109 (1987), H. 24},
  journal   = {Industrie-Anzeiger. Bd. 109 (1987), H. 24},
  issn      = {0019-9036},
  pages     = {28 - 29 -- 31 - 32},
  year      = {1987},
  language  = {de}
}
@article{ButenwegFehling2012,
  author    = {Butenweg, Christoph and Fehling, Ekkehard},
  title     = {Hintergrund f{\"u}r die vereinfachten Regeln bei Mauerwerksgeb{\"a}uden im Erdbebenfall},
  series = {Mauerwerk : European journal of masonry},
  volume    = {Volume 16},
  journal   = {Mauerwerk : European journal of masonry},
  number    = {Issue 3},
  publisher = {Wiley},
  address   = {Weinheim},
  issn      = {1437-1022 (E-Journal); 1432-3427 (Print)},
  doi       = {10.1002/dama.201200537},
  pages     = {127 -- 137},
  year      = {2012},
  abstract  = {Bei der Ausarbeitung des nationalen Anwendungsdokumentes zur DIN EN 1998-1 waren die in der ENV-Fassung enthaltenen vereinfachten Regeln im Lichte aktueller Forschungsergebnisse zu {\"u}berpr{\"u}fen und zu {\"u}berarbeiten. Die gleiche Aufgabe stellte sich auch f{\"u}r die Neufassung der DIN 4149. In beiden F{\"a}llen sind neben konstruktiven Regeln f{\"u}r die Art und Anordnung der zur Geb{\"a}udeaussteifung heranzuziehenden W{\"a}nde im Grundriss Tabellen enthalten, die unter bestimmten Bedingungen den Entfall eines rechnerischen Nachweises der Tragw{\"a}nde im Erdbebenfall erm{\"o}glichen. Dies ist f{\"u}r Schwachbebengebiete, wie sie in Deutschland und anderen L{\"a}ndern Mitteleuropas anzutreffen sind, sinnvoll, um unn{\"o}tigen Rechenaufwand sowie Probleme mit der F{\"u}hrbarkeit von Nachweisen so weit wie m{\"o}glich auszuschalten. Im vorliegenden Beitrag werden die Hintergr{\"u}nde der vereinfachten Regeln diskutiert und die Ergebnisse der Anwendung mit verschiedenen Rechenverfahren verglichen und bewertet.},
  language  = {de}
}
@article{FoersterMalindretosIndlekoferetal.2002,
  author    = {F{\"o}rster, Arnold and Malindretos, J{\"o}rg and Indlekofer, Klaus Michael and Lepsa, Mihail Ion},
  title     = {Homogeneity analysis of ion-implanted resonant tunnelling diodes for applications in digital logic circuits. Malindretos, J{\"o}rg; F{\"o}rster, Arno; Indlekofer, Klaus Michael; Lepsa, Mihail Ion; Hardtdegen, Hilde; Schmidt, Roland; Luth, Hans},
  series = {Superlattices and Microstructures. 31 (2002), H. 6},
  journal   = {Superlattices and Microstructures. 31 (2002), H. 6},
  isbn      = {0749-6036},
  pages     = {315 -- 325},
  year      = {2002},
  language  = {en}
}
@article{HoskensRoerTolstikhinetal.2000,
  author    = {Hoskens, R.C.P. and Roer, T.G. van de and Tolstikhin, V.I. and F{\"o}rster, Arnold},
  title     = {Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation},
  series = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2},
  journal   = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2},
  publisher = {IEEE Service Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-5947-X},
  pages     = {444 -- 445},
  year      = {2000},
  language  = {en}
}
@article{FoersterLepsaFreundt2007,
  author    = {F{\"o}rster, Arnold and Lepsa, M. I. and Freundt, D.},
  title     = {Hot electron injector Gunn diode for advanced driver assistance systems},
  series = {Applied physics A: materials science and processing. 87 (2007), H. 3},
  journal   = {Applied physics A: materials science and processing. 87 (2007), H. 3},
  isbn      = {0947-8396},
  pages     = {545 -- 558},
  year      = {2007},
  language  = {en}
}
@article{FoersterDoehlerHeber1998,
  author    = {F{\"o}rster, Arnold and D{\"o}hler, G. H and Heber, J.},
  title     = {Hot electrons in n-i-p.i-based devices / G. H. D{\"o}hler ; J. Heber ... A. F{\"o}rster ...},
  series = {Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)},
  journal   = {Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)},
  publisher = {Clarendon Press},
  address   = {Oxford},
  isbn      = {0-19-850058-0},
  pages     = {478 -- 504},
  year      = {1998},
  language  = {en}
}
@inproceedings{RousseauKern2014,
  author    = {Rousseau, Alain and Kern, Alexander},
  title     = {How to deal with environmental risk in IEC 62305-2},
  series = {2014 International Conference on Lightning Protection (ICLP), Shanghai, China},
  booktitle = {2014 International Conference on Lightning Protection (ICLP), Shanghai, China},
  organization    = {International Conference on Lightning Protection <2014, Shanghai>},
  pages     = {521 -- 527},
  year      = {2014},
  abstract  = {The 2nd edition of the lightning risk management standard (IEC 62305-2) considers structures, which may endanger environment. In these cases, the loss is not limited to the structure itself, which is valid for usual structures. In the past (Edition 1) this danger was simply taken into account by a special hazard factor, multiplying the existing risk for the structure with a number. Now, in the edition 2, we add to the risk for the structure itself a "second risk" due to the losses outside the structure. The losses outside can be treated independently from what occurs inside. This is a major advantage to analyze the risk for sensitive structures, like chemical plants, nuclear plants, or structures containing explosives, etc. In this paper, the existing procedure given by the European version EN 62305-2 Ed.2 is further developed and applied to a few structures.},
  language  = {en}
}