@article{HodelOrzatiMarsoetal.2000,
  author    = {Hodel, U. and Orzati, A. and Marso, M. and Homann, O. and Fox, A. and Hart, A. v. d. and F{\"o}rster, Arnold and Kordos, P. and L{\"u}th, H.},
  title     = {A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver},
  series = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials},
  journal   = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials},
  publisher = {IEEE Service Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-6320-5},
  pages     = {466 -- 469},
  year      = {2000},
  language  = {en}
}
@article{StockMalindretosIndlekoferetal.2001,
  author    = {Stock, J. and Malindretos, J. and Indlekofer, K.M. and P{\"o}ttgens, Michael and F{\"o}rster, Arnold and L{\"u}th, Hans},
  title     = {A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits},
  series = {IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6},
  journal   = {IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6},
  isbn      = {0018-9383},
  pages     = {1028 -- 1032},
  year      = {2001},
  language  = {en}
}
@article{DarmoSchaefferFoersteretal.2000,
  author    = {Darmo, J. and Sch{\"a}ffer, F. and F{\"o}rster, Arnold and Kordos, P.},
  title     = {Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range},
  series = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]},
  journal   = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {0780359399},
  pages     = {147 -- 150},
  year      = {2000},
  language  = {en}
}
@article{KrafftFoersterHartetal.2001,
  author    = {Krafft, B. and F{\"o}rster, Arnold and Hart, A. van der and Sch{\"a}pers, T.},
  title     = {Control of Aharonov-Bohm oscillations in a AlGaAs/GaAs ring by asymmetric and symmetric gate biasing},
  series = {Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4},
  journal   = {Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4},
  isbn      = {1386-9477},
  pages     = {635 -- 641},
  year      = {2001},
  language  = {en}
}
@article{TillmannFoerster2000,
  author    = {Tillmann, K. and F{\"o}rster, Arnold},
  title     = {Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)},
  series = {Thin Solid Films. 368 (2000), H. 1},
  journal   = {Thin Solid Films. 368 (2000), H. 1},
  isbn      = {0040-6090},
  pages     = {93 -- 104},
  year      = {2000},
  language  = {en}
}
@inproceedings{FoersterStockMontanarietal.2006,
  author    = {F{\"o}rster, Arnold and Stock, J{\"u}rgen and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans},
  title     = {Fabrication and characterisation of GaAs Gunn Diode Chips for applications at 77 GHz in automotive industry},
  url       = {http://nbn-resolving.de/urn:nbn:de:hbz:a96-opus-1462},
  year      = {2006},
  abstract  = {GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.},
  subject      = {Biosensor},
  language  = {en}
}
@article{VitusevichFoersterReetzetal.2000,
  author    = {Vitusevich, S. A. and F{\"o}rster, Arnold and Reetz, W. and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V.},
  title     = {Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode},
  series = {Nanotechnology. 11 (2000), H. 4},
  journal   = {Nanotechnology. 11 (2000), H. 4},
  isbn      = {1361-6528},
  pages     = {305 -- 308},
  year      = {2000},
  language  = {en}
}
@article{SchoeningBiselliSelmeretal.2012,
  author    = {Sch{\"o}ning, Michael Josef and Biselli, Manfred and Selmer, Thorsten and {\"O}hlschl{\"a}ger, Peter and Baumann, Marcus and F{\"o}rster, Arnold and Poghossian, Arshak},
  title     = {Forschung „zwischen" den Disziplinen: das Institut f{\"u}r Nano- und Biotechnologien},
  series = {Analytik news : das Online-Labormagazin f{\"u}r Labor und Analytik},
  volume    = {Publ. online},
  journal   = {Analytik news : das Online-Labormagazin f{\"u}r Labor und Analytik},
  publisher = {Dr. Beyer Internet-Beratung},
  address   = {Ober-Ramstadt},
  pages     = {11 Seiten},
  year      = {2012},
  abstract  = {"Biologie trifft Mikroelektronik", das Motto des Instituts f{\"u}r Nano- und Biotechnologien (INB) an der FH Aachen, unterstreicht die zunehmende Bedeutung interdisziplin{\"a}r gepr{\"a}gter Forschungsaktivit{\"a}ten. Der thematische Zusammenschluss grundst{\"a}ndiger Disziplinen, wie die Physik, Elektrotechnik, Chemie, Biologie sowie die Materialwissenschaften, l{\"a}sst neue Forschungsgebiete entstehen, ein herausragendes Beispiel hierf{\"u}r ist die Nanotechnologie: Hier werden neue Werkstoffe und Materialien entwickelt, einzelne Nanopartikel oder Molek{\"u}le und deren Wechselwirkung untersucht oder Schichtstrukturen im Nanometerbereich aufgebaut, die neue und vorher nicht bekannte Eigenschaften hervorbringen. Vor diesem Hintergrund b{\"u}ndelt das im Jahre 2006 gegr{\"u}ndete INB die an der FH Aachen vorhandenen Kompetenzen von derzeit insgesamt sieben Laboratorien auf den Gebieten der Halbleitertechnik und Nanoelektronik, Nanostrukturen und DNA-Sensorik, der Chemo- und Biosensorik, der Enzymtechnologie, der Mikrobiologie und Pflanzenbiotechnologie, der Zellkulturtechnik, sowie der Roten Biotechnologie synergetisch. In der Nano- und Biotechnologie steckt außergew{\"o}hnliches Potenzial! Nicht zuletzt deshalb stellen sich die Forscher der Herausforderung, in diesem Bereich gemeinsam zu forschen und Schnittstellen zu nutzen, um so bei der Gestaltung neuartiger Ideen und Produkte mitzuwirken, die zuk{\"u}nftig unser allt{\"a}gliches Leben ver{\"a}ndern werden. Im Folgenden werden die verschiedenen Forschungsbereiche kurz zusammenfassend vorgestellt und vorhandene Interaktionen anhand von exemplarisch ausgew{\"a}hlten, aktuellen Forschungsprojekten skizziert.},
  language  = {de}
}
@article{MikulicsCamaraHardtetal.2004,
  author    = {Mikulics, M. and Camara, I. and Hardt, A. van der and Fox, A. and F{\"o}rster, Arnold and Gusten, R. and L{\"u}th, H. and Kordos, P.},
  title     = {Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs},
  series = {Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald},
  journal   = {Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald},
  publisher = {IEEE Operations Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-8335-7},
  pages     = {231 -- 234},
  year      = {2004},
  language  = {en}
}
@article{HoskensRoerTolstikhinetal.2000,
  author    = {Hoskens, R.C.P. and Roer, T.G. van de and Tolstikhin, V.I. and F{\"o}rster, Arnold},
  title     = {Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation},
  series = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2},
  journal   = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2},
  publisher = {IEEE Service Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-5947-X},
  pages     = {444 -- 445},
  year      = {2000},
  language  = {en}
}