@article{FoersterSpitzerLueth1986,
  author    = {F{\"o}rster, Arnold and Spitzer, A. and L{\"u}th, H.},
  title     = {The adsorption of fluor-carbon complexes on GaAs(110) studied by electron energy loss spectroscopy},
  series = {Surface Science. 172 (1986), H. 1},
  journal   = {Surface Science. 172 (1986), H. 1},
  isbn      = {0039-6028},
  pages     = {174 -- 182},
  year      = {1986},
  language  = {en}
}
@article{FoersterLangeGerthsen1994,
  author    = {F{\"o}rster, Arnold and Lange, J. and Gerthsen, D.},
  title     = {The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes},
  series = {Journal of Physics D: Applied Physics. 27 (1994), H. 1},
  journal   = {Journal of Physics D: Applied Physics. 27 (1994), H. 1},
  isbn      = {0022-3727},
  pages     = {175 -- 178},
  year      = {1994},
  language  = {en}
}
@article{FoersterLayetLueth1988,
  author    = {F{\"o}rster, Arnold and Layet, J. M. and L{\"u}th, H.},
  title     = {The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) /},
  series = {Applied Physics A: Materials Science \& Processing. 47 (1988), H. 1},
  journal   = {Applied Physics A: Materials Science \& Processing. 47 (1988), H. 1},
  isbn      = {0947-8396},
  pages     = {95 -- 97},
  year      = {1988},
  language  = {en}
}
@article{FoersterTulkeLueth1987,
  author    = {F{\"o}rster, Arnold and Tulke, A. and L{\"u}th, H.},
  title     = {The Schottky barrier at the InSb(110)-Sn interface},
  series = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 5 (1987), H. 4},
  journal   = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 5 (1987), H. 4},
  isbn      = {1071-1023},
  pages     = {1054 -- 1056},
  year      = {1987},
  language  = {en}
}
@article{FoersterIndlekoferLange1996,
  author    = {F{\"o}rster, Arnold and Indlekofer, K. and Lange, J.},
  title     = {Theory of single-electron tunneling in resonant-tunneling diodes including scattering and multiple subbands at finite temperature / K. M. Indlekofer ; J. Lange ; A. F{\"o}rster ...},
  series = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 11},
  journal   = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 11},
  isbn      = {1095-3795},
  pages     = {7392 -- 7402},
  year      = {1996},
  language  = {en}
}
@article{FoersterReschScholz1993,
  author    = {F{\"o}rster, Arnold and Resch, U. and Scholz, S. M.},
  title     = {Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy / U. Resch ; S. M. Scholz ; U. Rossow ... A. F{\"o}rter ...},
  series = {Applied Surface Science. 63 (1993), H. 1-4},
  journal   = {Applied Surface Science. 63 (1993), H. 1-4},
  isbn      = {0169-4332},
  pages     = {106 -- 110},
  year      = {1993},
  language  = {en}
}
@article{FoersterDarmoSchaferetal.2002,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Schafer, F. and Kordos, P.},
  title     = {Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R},
  series = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza},
  journal   = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza},
  publisher = {IEEE Operations Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-7276-X},
  pages     = {87 -- 90},
  year      = {2002},
  language  = {en}
}
@article{FoersterGriebelIndlekoferetal.1998,
  author    = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, K. M. and L{\"u}th, H.},
  title     = {Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; F{\"o}rster, A.; L{\"u}th, H.},
  series = {Journal of Applied Physics. 84 (1998), H. 12},
  journal   = {Journal of Applied Physics. 84 (1998), H. 12},
  isbn      = {1089-7550},
  pages     = {6719 -- 6724},
  year      = {1998},
  language  = {en}
}
@article{FoersterGriebelIndlekoferetal.1998,
  author    = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, M. and L{\"u}th, H.},
  title     = {Transport through a buried double barrier single electron transistor at low temperatures},
  series = {Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4},
  journal   = {Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4},
  isbn      = {1386-9477},
  pages     = {502 -- 506},
  year      = {1998},
  language  = {en}
}
@article{VitusevichFoersterIndlekoferetal.2000,
  author    = {Vitusevich, S. A. and F{\"o}rster, Arnold and Indlekofer, K.-M. and L{\"u}th, H. and Belyaev, A. E. and Glavin, B. A. and Konakova, R. V.},
  title     = {Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes},
  series = {Physical Review . B. 61 (2000), H. 16},
  journal   = {Physical Review . B. 61 (2000), H. 16},
  isbn      = {1550-235X},
  pages     = {10898 -- 10904},
  year      = {2000},
  language  = {en}
}