@article{FoersterLeutherLueth1996,
  author    = {F{\"o}rster, Arnold and Leuther, A. and L{\"u}th, H.},
  title     = {DX centres, conduction band offsets and Si-dopant segregation in heterostructures / A. Leuther ; A. F{\"o}rster ; H. L{\"u}th ...},
  series = {Semiconductor science and technology. 11 (1996), H. 5},
  journal   = {Semiconductor science and technology. 11 (1996), H. 5},
  isbn      = {1361-6641},
  pages     = {766 -- 771},
  year      = {1996},
  language  = {en}
}
@article{FoersterLauterLueth1996,
  author    = {F{\"o}rster, Arnold and Lauter, J. and L{\"u}th, H.},
  title     = {AlGaAs/GaAs avalanche detector array-1 GBit/s X-ray receiver fortiming measurements / J. Lauter ; A. F{\"o}rster ; H. L{\"u}th ...},
  series = {IEEE Transactions on Nuclear Science (T-NS). 43 (1996), H. 3, Part 2},
  journal   = {IEEE Transactions on Nuclear Science (T-NS). 43 (1996), H. 3, Part 2},
  isbn      = {0018-9499},
  pages     = {1446 -- 1451},
  year      = {1996},
  language  = {en}
}
@article{FoersterGriebelIndlekoferetal.1998,
  author    = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, K. M. and L{\"u}th, H.},
  title     = {Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; F{\"o}rster, A.; L{\"u}th, H.},
  series = {Journal of Applied Physics. 84 (1998), H. 12},
  journal   = {Journal of Applied Physics. 84 (1998), H. 12},
  isbn      = {1089-7550},
  pages     = {6719 -- 6724},
  year      = {1998},
  language  = {en}
}
@article{FoersterGriebelIndlekoferetal.1998,
  author    = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, M. and L{\"u}th, H.},
  title     = {Transport through a buried double barrier single electron transistor at low temperatures},
  series = {Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4},
  journal   = {Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4},
  isbn      = {1386-9477},
  pages     = {502 -- 506},
  year      = {1998},
  language  = {en}
}
@article{FoersterGriebelIndlekoferetal.1999,
  author    = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, K.M. and L{\"u}th, H.},
  title     = {Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; F{\"o}rster, A.; L{\"u}th, H.},
  series = {Journal of Physics D: Applied Physics. 32 (1999), H. 14},
  journal   = {Journal of Physics D: Applied Physics. 32 (1999), H. 14},
  isbn      = {1361-6463},
  pages     = {1729 -- 1733},
  year      = {1999},
  language  = {en}
}
@article{HodelOrzatiMarsoetal.2000,
  author    = {Hodel, U. and Orzati, A. and Marso, M. and Homann, O. and Fox, A. and Hart, A. v. d. and F{\"o}rster, Arnold and Kordos, P. and L{\"u}th, H.},
  title     = {A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver},
  series = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials},
  journal   = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials},
  publisher = {IEEE Service Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-6320-5},
  pages     = {466 -- 469},
  year      = {2000},
  language  = {en}
}
@article{VitusevichFoersterReetzetal.2000,
  author    = {Vitusevich, S. A. and F{\"o}rster, Arnold and Reetz, W. and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V.},
  title     = {Spectral Responsivity of single-quantum-well photodetectors},
  series = {Applied Physics Letters. 77 (2000), H. 1},
  journal   = {Applied Physics Letters. 77 (2000), H. 1},
  isbn      = {1077-3118},
  pages     = {16 -- 18},
  year      = {2000},
  language  = {en}
}
@article{VitusevichFoersterIndlekoferetal.2000,
  author    = {Vitusevich, S. A. and F{\"o}rster, Arnold and Indlekofer, K.-M. and L{\"u}th, H. and Belyaev, A. E. and Glavin, B. A. and Konakova, R. V.},
  title     = {Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes},
  series = {Physical Review . B. 61 (2000), H. 16},
  journal   = {Physical Review . B. 61 (2000), H. 16},
  isbn      = {1550-235X},
  pages     = {10898 -- 10904},
  year      = {2000},
  language  = {en}
}
@article{SchmidtTonnesmannFoersteretal.2000,
  author    = {Schmidt, R. and Tonnesmann, A. and F{\"o}rster, Arnold and Grimm, M. and Kordos, P. and L{\"u}th, H.},
  title     = {Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer},
  series = {8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society},
  journal   = {8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society},
  publisher = {IEEE Operations Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-6550-X},
  pages     = {95 -- 98},
  year      = {2000},
  language  = {en}
}
@article{VitusevichFoersterReetzetal.2000,
  author    = {Vitusevich, S. A. and F{\"o}rster, Arnold and Reetz, W. and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V.},
  title     = {Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode},
  series = {Nanotechnology. 11 (2000), H. 4},
  journal   = {Nanotechnology. 11 (2000), H. 4},
  isbn      = {1361-6528},
  pages     = {305 -- 308},
  year      = {2000},
  language  = {en}
}