@article{FoersterLachenmannFriedrichetal.1999,
  author    = {F{\"o}rster, Arnold and Lachenmann, S. G. and Friedrich, I. and Uhlisch, D.},
  title     = {Superconductor/semiconductor step junctions: the basic element for hybrid three terminal devices. Lachenmann, S. G., F{\"o}rster, A.; Friedrich, I.; Uhlisch, D.; Sch{\"a}pers, Th.; Kastalsky, A.; Golubov, A. A.},
  series = {Applied Superconductivity. 6 (1999), H. 10-12},
  journal   = {Applied Superconductivity. 6 (1999), H. 10-12},
  isbn      = {0964-1807},
  pages     = {681 -- 688},
  year      = {1999},
  language  = {en}
}
@article{FoersterVitusevichBelyaevetal.1999,
  author    = {F{\"o}rster, Arnold and Vitusevich, S. A. and Belyaev, A. E. and Indlekofer, K. M.},
  title     = {Resonant tunneling effect in delta p-n GaAs junction. Vitusevich, S. A.; F{\"o}rster, A.; Belyaev, A. E.; Indlekofer, K. M.; L{\"u}th, H.; Konakova, R. V.},
  series = {Microelectronic Engineering. 46 (1999), H. 1-4},
  journal   = {Microelectronic Engineering. 46 (1999), H. 1-4},
  isbn      = {0167-9317},
  pages     = {169 -- 172},
  year      = {1999},
  language  = {en}
}
@article{FoersterVitusevichBelyaev1999,
  author    = {F{\"o}rster, Arnold and Vitusevich, S. A. and Belyaev, A. E.},
  title     = {Optically controlled 2D tunneling in GaAs delta-doped p-n junction / S. A. Vitusevich ; A. F{\"o}rster ; A. E. Belyaev ...},
  series = {Semiconductor Physics, Quantum Electronics \& Optoelectronics (SQO) : International Scientific Journal. 2 (1999), H. 1},
  journal   = {Semiconductor Physics, Quantum Electronics \& Optoelectronics (SQO) : International Scientific Journal. 2 (1999), H. 1},
  isbn      = {1605-6582},
  pages     = {7 -- 10},
  year      = {1999},
  language  = {en}
}
@article{FoersterVitusevichBelyaev1999,
  author    = {F{\"o}rster, Arnold and Vitusevich, S. A. and Belyaev, B. A.},
  title     = {Intrinsic bistability effect in delta doped tunneling diodes / S. A. Vitusevich ; A. F{\"o}rster ; B. A. Belyaev ...},
  series = {Proceedings of the XXVIII International School on Physics of Semiconducting Compounds : Jaszowiec, Poland, June 6 - 11, 1999 / Polish Academy of Sciences, Institute of Physics. Ed. of the proceedings Wojciech Szuszkiewicz},
  journal   = {Proceedings of the XXVIII International School on Physics of Semiconducting Compounds : Jaszowiec, Poland, June 6 - 11, 1999 / Polish Academy of Sciences, Institute of Physics. Ed. of the proceedings Wojciech Szuszkiewicz},
  address   = {Warsaw},
  pages     = {S. 511 - 688 : Ill., graph. Darst.},
  year      = {1999},
  language  = {en}
}
@article{FoersterMarsoGersdorfetal.1999,
  author    = {F{\"o}rster, Arnold and Marso, M. and Gersdorf, P. and Fox, A.},
  title     = {An InAlAs-InGaAs OPFET with responsivity above 200 A/W at 1.3-\&\#956;m wavelength. Marso, M.; Gersdorf, P.; Fox, A.; Hodel, U.; Lambertini, R.; Kordos, P.},
  series = {IEEE Photonics Technology Letters. 11 (1999), H. 1},
  journal   = {IEEE Photonics Technology Letters. 11 (1999), H. 1},
  isbn      = {1041-1135},
  pages     = {117 -- 119},
  year      = {1999},
  language  = {en}
}
@article{RosenauerOberstLitvinovetal.2000,
  author    = {Rosenauer, A. and Oberst, W. and Litvinov, D. and Gerthsen, D. and F{\"o}rster, Arnold and Schmidt, R.},
  title     = {Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy},
  series = {Physical Review B. 61 (2000), H. 12},
  journal   = {Physical Review B. 61 (2000), H. 12},
  isbn      = {1095-3795},
  pages     = {8276 -- 8288},
  year      = {2000},
  language  = {en}
}
@article{FoersterLuethSchaepers1999,
  author    = {F{\"o}rster, Arnold and L{\"u}th, Hans and Sch{\"a}pers, Thomas},
  title     = {Die neue Welt},
  series = {Spektrum der Wissenschaft (1999)},
  journal   = {Spektrum der Wissenschaft (1999)},
  isbn      = {0170-2971},
  pages     = {90 -- 93},
  year      = {1999},
  language  = {de}
}
@article{HoskensTolstikhinFoersteretal.2000,
  author    = {Hoskens, R. C. P. and Tolstikhin, V.I. and F{\"o}rster, Arnold and Roer, T.G. van de},
  title     = {Vertically integrated transistor-laser structure, take 2},
  series = {WOCSDICE 2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece.},
  journal   = {WOCSDICE 2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece.},
  publisher = {Univ. of Michigan},
  address   = {Ann Arbor, Mich.},
  isbn      = {0970311109},
  pages     = {Getr. Z{\"a}hlung [ca. 200 S.]},
  year      = {2000},
  language  = {en}
}
@article{DarmoSchaefferFoersteretal.2000,
  author    = {Darmo, J. and Sch{\"a}ffer, F. and F{\"o}rster, Arnold and Kordos, P.},
  title     = {Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range},
  series = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]},
  journal   = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {0780359399},
  pages     = {147 -- 150},
  year      = {2000},
  language  = {en}
}
@article{FoersterGriebelIndlekoferetal.1999,
  author    = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, K.M. and L{\"u}th, H.},
  title     = {Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; F{\"o}rster, A.; L{\"u}th, H.},
  series = {Journal of Physics D: Applied Physics. 32 (1999), H. 14},
  journal   = {Journal of Physics D: Applied Physics. 32 (1999), H. 14},
  isbn      = {1361-6463},
  pages     = {1729 -- 1733},
  year      = {1999},
  language  = {en}
}
@article{HodelOrzatiMarsoetal.2000,
  author    = {Hodel, U. and Orzati, A. and Marso, M. and Homann, O. and Fox, A. and Hart, A. v. d. and F{\"o}rster, Arnold and Kordos, P. and L{\"u}th, H.},
  title     = {A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver},
  series = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials},
  journal   = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials},
  publisher = {IEEE Service Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-6320-5},
  pages     = {466 -- 469},
  year      = {2000},
  language  = {en}
}
@article{HoskensRoerTolstikhinetal.2000,
  author    = {Hoskens, R.C.P. and Roer, T.G. van de and Tolstikhin, V.I. and F{\"o}rster, Arnold},
  title     = {Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation},
  series = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2},
  journal   = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2},
  publisher = {IEEE Service Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-5947-X},
  pages     = {444 -- 445},
  year      = {2000},
  language  = {en}
}
@article{StockMalindretosIndlekoferetal.2001,
  author    = {Stock, J. and Malindretos, J. and Indlekofer, K.M. and P{\"o}ttgens, Michael and F{\"o}rster, Arnold and L{\"u}th, Hans},
  title     = {A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits},
  series = {IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6},
  journal   = {IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6},
  isbn      = {0018-9383},
  pages     = {1028 -- 1032},
  year      = {2001},
  language  = {en}
}
@article{KrafftFoersterHartetal.2001,
  author    = {Krafft, B. and F{\"o}rster, Arnold and Hart, A. van der and Sch{\"a}pers, T.},
  title     = {Control of Aharonov-Bohm oscillations in a AlGaAs/GaAs ring by asymmetric and symmetric gate biasing},
  series = {Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4},
  journal   = {Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4},
  isbn      = {1386-9477},
  pages     = {635 -- 641},
  year      = {2001},
  language  = {en}
}
@article{VitusevichFoersterLuethetal.2001,
  author    = {Vitusevich, S. A. and F{\"o}rster, Arnold and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V. and Konakova, R. V. and Sheka, D. I.},
  title     = {Resonant spectroscopy of electric-field-induced superlattices},
  series = {Journal of Applied Physics. 90 (2001), H. 6},
  journal   = {Journal of Applied Physics. 90 (2001), H. 6},
  isbn      = {1089-7550},
  doi       = {10.1063/1.1392956},
  pages     = {2857 -- 2861},
  year      = {2001},
  language  = {en}
}
@article{FoersterMikulicsMarsoetal.2001,
  author    = {F{\"o}rster, Arnold and Mikulics, M. and Marso, M. and Adam, R.},
  title     = {Low-temperature-grown MBE GaAs for terahertz photomixers. Mikulics, M.; Marso, M.; Adam, R.; Fox, A.; Buca, D.; F{\"o}rster, A.; Kordos, P.; Xu, Y.; Sobolewski, R.},
  series = {2001 Symposium on Electron Devices for Microwave and Optoelectronic Applications ; [Vienna University of Technology, Institute of Electrical Measurements and Circuit Design, 15 - 16 November 2001, Vienna, Austria ; proceedings] / EDMO 2001. Organised by: Institute of Electrical Measurements and Circuit Design, Vienna University of Technology, Austria. With technical co-sponsorship from IEEE Electron Devices Society},
  journal   = {2001 Symposium on Electron Devices for Microwave and Optoelectronic Applications ; [Vienna University of Technology, Institute of Electrical Measurements and Circuit Design, 15 - 16 November 2001, Vienna, Austria ; proceedings] / EDMO 2001. Organised by: Institute of Electrical Measurements and Circuit Design, Vienna University of Technology, Austria. With technical co-sponsorship from IEEE Electron Devices Society},
  publisher = {IEEE Operations Center},
  address   = {Piscataway, NJ},
  isbn      = {078037049X},
  pages     = {155 -- 155},
  year      = {2001},
  language  = {en}
}
@article{FoersterVitusevichBelyaevetal.2002,
  author    = {F{\"o}rster, Arnold and Vitusevich, S. A. and Belyaev, A. E. and Sheka, D. I.},
  title     = {Resonant tunneling effect in a periodically modulated electrical field. Vitusevich, S.A.; Forster, A.; Belyaev, A.E.; Sheka, D.I.; Luth, H.; Klein, N.; Danylyuk, S.V.; Konakova, R.},
  series = {Proceedings of the Tenth International Conference on Modulated Semiconductor Structures : held at the Johannes Kepler University, Linz, Austria, July 23 - 27, 2001 / MSS 10. Guest ed.: G{\"u}nther Bauer ...},
  journal   = {Proceedings of the Tenth International Conference on Modulated Semiconductor Structures : held at the Johannes Kepler University, Linz, Austria, July 23 - 27, 2001 / MSS 10. Guest ed.: G{\"u}nther Bauer ...},
  publisher = {Elsevier},
  address   = {Amsterdam [u.a.]},
  pages     = {811 -- 813},
  year      = {2002},
  language  = {en}
}
@article{FoersterAdamMikulicsetal.2002,
  author    = {F{\"o}rster, Arnold and Adam, R. and Mikulics, M. and Schelten, J.},
  title     = {Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R.},
  series = {Applied Physics Letters. 81 (2002), H. 18},
  journal   = {Applied Physics Letters. 81 (2002), H. 18},
  isbn      = {1077-3118},
  pages     = {3485 -- 3487},
  year      = {2002},
  language  = {en}
}
@article{FoersterMalindretosIndlekoferetal.2002,
  author    = {F{\"o}rster, Arnold and Malindretos, J{\"o}rg and Indlekofer, Klaus Michael and Lepsa, Mihail Ion},
  title     = {Homogeneity analysis of ion-implanted resonant tunnelling diodes for applications in digital logic circuits. Malindretos, J{\"o}rg; F{\"o}rster, Arno; Indlekofer, Klaus Michael; Lepsa, Mihail Ion; Hardtdegen, Hilde; Schmidt, Roland; Luth, Hans},
  series = {Superlattices and Microstructures. 31 (2002), H. 6},
  journal   = {Superlattices and Microstructures. 31 (2002), H. 6},
  isbn      = {0749-6036},
  pages     = {315 -- 325},
  year      = {2002},
  language  = {en}
}
@article{FoersterDarmoSchaferetal.2002,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Schafer, F. and Kordos, P.},
  title     = {Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R},
  series = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza},
  journal   = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza},
  publisher = {IEEE Operations Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-7276-X},
  pages     = {87 -- 90},
  year      = {2002},
  language  = {en}
}
@article{FoersterMikulicsSiebeetal.2002,
  author    = {F{\"o}rster, Arnold and Mikulics, M. and Siebe, F. and Fox, A.},
  title     = {Generation of 460 GHz radiation by photomixing in low-temperature-grown MBE GaAs. Mikulics, M.; Siebe, F.; Fox, A.; Marso, M.; Forster, A.; Stuer, H.; Schafer, F.; Gusten, R.; Kordos, P.},
  series = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza},
  journal   = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza},
  publisher = {IEEE Operations Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-7276-X},
  pages     = {129 -- 132},
  year      = {2002},
  language  = {en}
}
@article{FoersterBelyaevVitusevichetal.2002,
  author    = {F{\"o}rster, Arnold and Belyaev, A. E. and Vitusevich, S.A. and Eaves, L.},
  title     = {Photoresponse spectra in p-i-n diodes containing quantum dots. Belyaev, A.E.; Vitusevich, S.A.; Eaves, L.; Main, P.C.; Henini, M.; F{\"o}rster, A.; Reetz, W.; Danylyuk, S.V.},
  series = {Nanotechnology. 13 (2002), H. 1},
  journal   = {Nanotechnology. 13 (2002), H. 1},
  pages     = {94 -- 96},
  year      = {2002},
  language  = {en}
}
@article{FoersterKicinCambeletal.2002,
  author    = {F{\"o}rster, Arnold and Kicin, S and Cambel, V. and Kuliffayova, M.},
  title     = {Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. Kicin, S.; Cambel, V.; Kuliffayova, M.; Gregusova, D.; Kovacova, E.; Novak, J.; Kostic, I.; Forster, A.},
  series = {Journal of Applied Physics. 91 (2002), H. 2},
  journal   = {Journal of Applied Physics. 91 (2002), H. 2},
  isbn      = {1089-7550},
  pages     = {878 -- 880},
  year      = {2002},
  language  = {en}
}
@article{FoersterCambelKicinetal.2002,
  author    = {F{\"o}rster, Arnold and Cambel, V. and Kicin, S. and Kuliffayov{\´a}, M.},
  title     = {Preparation of patterned GaAs structures for MEMS and MOEMS. Cambel, V.; Kicin, S.; Kuliffayov{\´a}, M.; Kov{\´a}cov{\´a}, E.; Nov{\´a}k, J.; Kostic, I.; F{\"o}rster, A.},
  series = {Materials Science and Engineering: C. 19 (2002), H. 2},
  journal   = {Materials Science and Engineering: C. 19 (2002), H. 2},
  isbn      = {0928-4931},
  pages     = {161 -- 165},
  year      = {2002},
  language  = {en}
}
@article{FoersterStockIndlekofer2002,
  author    = {F{\"o}rster, Arnold and Stock, J. and Indlekofer, K. M.},
  title     = {Perspectives of resonant tunneling diodes},
  series = {Recent research developments in materials science \& engineering/ 1,2},
  journal   = {Recent research developments in materials science \& engineering/ 1,2},
  publisher = {Transworld Research Network},
  address   = {Trivandrum, India},
  isbn      = {81-7895-057-X},
  pages     = {527 -- 556},
  year      = {2002},
  language  = {en}
}
@article{FoersterIndlekoferLueth2002,
  author    = {F{\"o}rster, Arnold and Indlekofer, K.M. and L{\"u}th, H.},
  title     = {Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; F{\"o}rster, A.; L{\"u}th, H.},
  series = {Physica B: Condensed Matter. 314 (2002), H. 1-4},
  journal   = {Physica B: Condensed Matter. 314 (2002), H. 1-4},
  isbn      = {0921-4526},
  pages     = {499 -- 502},
  year      = {2002},
  language  = {en}
}
@article{FoersterKiesslichWackeretal.2003,
  author    = {F{\"o}rster, Arnold and Kiesslich, G. and Wacker, A. and Scholl, E.},
  title     = {Nonlinear charging effect of quantum dots in a p-i-n diode. Kiesslich, G.; Wacker, A.; Scholl, E.; Vitusevich, S.A.; Belyaev, A.E.; Danylyuk, S.V.; Forster, A.; Klein, N.; Henini, M.},
  series = {Physical Review B. 68 (2003)},
  journal   = {Physical Review B. 68 (2003)},
  isbn      = {1550-235X},
  year      = {2003},
  language  = {en}
}
@article{FoersterZamdmerHuetal.1999,
  author    = {F{\"o}rster, Arnold and Zamdmer, N. and Hu, Qing and Verghese, S.},
  title     = {Mode-Discriminating Photoconductor and Coplanar Wave-Guide Circuits for Picosecond Sampling. Zamdmer, N.; Hu, Qing ; Verghese, S. ; F{\"o}rster, A.},
  series = {Applied Physics Letters. 74 (1999), H. 7},
  journal   = {Applied Physics Letters. 74 (1999), H. 7},
  isbn      = {1077-3118},
  pages     = {1039 -- 1041},
  year      = {1999},
  language  = {en}
}
@article{VitusevichFoersterIndlekoferetal.2000,
  author    = {Vitusevich, S. A. and F{\"o}rster, Arnold and Indlekofer, K.-M. and L{\"u}th, H. and Belyaev, A. E. and Glavin, B. A. and Konakova, R. V.},
  title     = {Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes},
  series = {Physical Review . B. 61 (2000), H. 16},
  journal   = {Physical Review . B. 61 (2000), H. 16},
  isbn      = {1550-235X},
  pages     = {10898 -- 10904},
  year      = {2000},
  language  = {en}
}
@article{Foerster2003,
  author    = {F{\"o}rster, Arnold},
  title     = {Layer Deposition I},
  series = {Fundamentals of nanoelectronics / Stefan Bl{\"u}gel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums J{\"u}lich : Materie und Material ; 14 ; 34)},
  journal   = {Fundamentals of nanoelectronics / Stefan Bl{\"u}gel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums J{\"u}lich : Materie und Material ; 14 ; 34)},
  publisher = {Forschungszentrum, Zentralbibliothek},
  address   = {J{\"u}lich},
  isbn      = {3-89336-319-X},
  pages     = {C2.1 -- C2.13},
  year      = {2003},
  language  = {en}
}
@article{TillmannFoerster2000,
  author    = {Tillmann, K. and F{\"o}rster, Arnold},
  title     = {Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)},
  series = {Thin Solid Films. 368 (2000), H. 1},
  journal   = {Thin Solid Films. 368 (2000), H. 1},
  isbn      = {0040-6090},
  pages     = {93 -- 104},
  year      = {2000},
  language  = {en}
}
@article{VitusevichFoersterReetzetal.2000,
  author    = {Vitusevich, S. A. and F{\"o}rster, Arnold and Reetz, W. and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V.},
  title     = {Spectral Responsivity of single-quantum-well photodetectors},
  series = {Applied Physics Letters. 77 (2000), H. 1},
  journal   = {Applied Physics Letters. 77 (2000), H. 1},
  isbn      = {1077-3118},
  pages     = {16 -- 18},
  year      = {2000},
  language  = {en}
}
@article{FoersterRosenauerOberstetal.1999,
  author    = {F{\"o}rster, Arnold and Rosenauer, A. and Oberst, W. and Gerthsen, D.},
  title     = {Atomic scale analysis of the indium distribution in InGaAs/GaAs (001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions. Rosenauer, A. ; Oberst, W. ; Gerthsen, D. ; F{\"o}rster, A.},
  series = {Thin Solid Films. 357 (1999)},
  journal   = {Thin Solid Films. 357 (1999)},
  isbn      = {0040-6090},
  pages     = {18 -- 21},
  year      = {1999},
  language  = {en}
}
@article{FoersterDarmoDubeckyetal.1998,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Dubecky, F. and Kordos, P.},
  title     = {Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; F{\"o}rster, A.},
  series = {Applied Physics Letters. 72 (1998), H. 5},
  journal   = {Applied Physics Letters. 72 (1998), H. 5},
  isbn      = {1077-3118},
  pages     = {590 -- 592},
  year      = {1998},
  language  = {en}
}
@article{FoersterLachenmannFridrichetal.1999,
  author    = {F{\"o}rster, Arnold and Lachenmann, S. G. and Fridrich, I. and Sch{\"a}pers, T.},
  title     = {Supression of the surface-inversion layer of p-type InAs. Lachenmann, S. G.; Fridrich, I.; F{\"o}rster, A.; Sch{\"a}pers, Th.},
  series = {Journal of Applied Physics. 85 (1999), H. 12},
  journal   = {Journal of Applied Physics. 85 (1999), H. 12},
  isbn      = {1089-7550},
  pages     = {8242 -- 8246},
  year      = {1999},
  language  = {en}
}
@article{FoersterZamdmerHuetal.1999,
  author    = {F{\"o}rster, Arnold and Zamdmer, N. and Hu, Qing and McIntosh, K. A.},
  title     = {On-chip frequency domain submillimeter-wave transceiver. Zamdmer, N.; Hu, Qing ; McIntosh K. A. ; Verghise, S. ; F{\"o}rster, A.},
  series = {Applied Physics Letters. 75 (1999), H. 24},
  journal   = {Applied Physics Letters. 75 (1999), H. 24},
  isbn      = {1077-3118},
  pages     = {3877 -- 3879},
  year      = {1999},
  language  = {en}
}
@article{FoersterGriebelIndlekoferetal.1998,
  author    = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, K. M. and L{\"u}th, H.},
  title     = {Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; F{\"o}rster, A.; L{\"u}th, H.},
  series = {Journal of Applied Physics. 84 (1998), H. 12},
  journal   = {Journal of Applied Physics. 84 (1998), H. 12},
  isbn      = {1089-7550},
  pages     = {6719 -- 6724},
  year      = {1998},
  language  = {en}
}
@article{FoersterLachenmannKastalskyetal.1998,
  author    = {F{\"o}rster, Arnold and Lachenmann, S. G. and Kastalsky, A. and Uhlisch, D.},
  title     = {Hybrid superconductor/semiconductor step junction with three terminals. Lachenmann, S. G.; Kastalsky, A.; F{\"o}rster A.; Uhlisch, D.; Neurohr, K.; Sch{\"a}pers, Th.},
  series = {Journal of Applied Physics. 83 (1998), H. 12},
  journal   = {Journal of Applied Physics. 83 (1998), H. 12},
  isbn      = {1089-7550},
  pages     = {8077 -- 8079},
  year      = {1998},
  language  = {en}
}
@article{Foerster1995,
  author    = {F{\"o}rster, Arnold},
  title     = {Ultrahigh frequency measurements of magnetic penetration length and surface impedance of YBa2Cu3O7-x microstriplines on Si and GaAs substrates . R{\"u}ders, F; Hollricher, O.; Copetti, C. A. ; F{\"o}rster, A. ; Buchal, Ch. ; Prusseit, W. ; Kinder, H.},
  series = {Journal of Applied Physics. 77 (1995), H. 10},
  journal   = {Journal of Applied Physics. 77 (1995), H. 10},
  isbn      = {1089-7550},
  pages     = {5282 -- 5286},
  year      = {1995},
  language  = {en}
}
@article{FoersterHaukeJakumeitetal.1998,
  author    = {F{\"o}rster, Arnold and Hauke, M. and Jakumeit, J. and Krafft, B.},
  title     = {DX Centers in Al0.3Ga0.7As/GaAs Analyzed by Point Contact Measurements. Hauke, M.; Jakumeit, J.; Krafft, B.; Nimtz, G.; F{\"o}rster, A.; L{\"u}th, H.},
  series = {Journal of Applied Physics. 84 (1998), H. 4},
  journal   = {Journal of Applied Physics. 84 (1998), H. 4},
  isbn      = {1089-7550},
  pages     = {2034 -- 2039},
  year      = {1998},
  language  = {en}
}
@article{MikulicsMarsoCamaraMayorgaetal.2005,
  author    = {Mikulics, M. and Marso, M. and C{\´a}mara Mayorga, I. and Gusten, R. and Stancek, S. and Michael, E. A. and Schieder, R. and Wolter, M. and Buca, D. and F{\"o}rster, Arnold and Kordos, P. and L{\"u}th, H.},
  title     = {Photomixers fabricated on nitrogen-ion-implanted GaAs},
  series = {Applied physics letters. 87 (2005)},
  journal   = {Applied physics letters. 87 (2005)},
  pages     = {041106-1 -- 041106-3},
  year      = {2005},
  language  = {en}
}
@article{FoersterMikulicsWuetal.2006,
  author    = {F{\"o}rster, Arnold and Mikulics, M. and Wu, S. and Marso, M.},
  title     = {Ultrafast and Highly Sensitive Photodetectors With Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs. Mikulics, M.; Wu, S.; Marso, M.; Adam, R.; F{\"o}rster, A.; van der Hart, A.; Kordos, P.; L{\"u}th, H.; Sobolewski, R.},
  series = {IEEE Photonics Technology Letters. 18 (2006), H. 7},
  journal   = {IEEE Photonics Technology Letters. 18 (2006), H. 7},
  pages     = {820 -- 822},
  year      = {2006},
  language  = {en}
}
@article{FoersterMontanariLepsaetal.2005,
  author    = {F{\"o}rster, Arnold and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans},
  title     = {High frequency investigation of graded gap injectors for GaAs Gunn diodes / Simone Montanari ; Arnold F{\"o}rster ; Mihail Ion Lepsa ; Hans L{\"u}th},
  series = {Solid-state electronics. 49 (2005), H. 2},
  journal   = {Solid-state electronics. 49 (2005), H. 2},
  isbn      = {0038-1101},
  pages     = {245 -- 250},
  year      = {2005},
  language  = {en}
}
@article{FoersterMarsoMikulicsetal.2005,
  author    = {F{\"o}rster, Arnold and Marso, M. and Mikulics, V. V. and Adam, R.},
  title     = {Ultrafast Phenomena in Freestanding LT-GaAs Devices. Marso, M.; Mikulics, V. V.; Adam, R.; Wu, S.; Zheng, X.; Camara, I.; Siebe, N. Y.; F{\"o}rster, A.; G{\"u}sten, R.; Kordos, P.; Sobolewski, R.},
  series = {Acta physica Polonica / A. 107 (2005), H. 1},
  journal   = {Acta physica Polonica / A. 107 (2005), H. 1},
  isbn      = {0587-4246},
  pages     = {109 -- 117},
  year      = {2005},
  language  = {en}
}
@article{FoersterWensorraIndlekoferetal.2005,
  author    = {F{\"o}rster, Arnold and Wensorra, J. and Indlekofer, K. M. and L{\"u}th, H.},
  title     = {Resonant tunneling in nanocolumns improved by quantum collimation. Wensorra, J.; Indlekofer, K. M.; F{\"o}rster, A.; L{\"u}th, H.},
  series = {Nano Letters. 5 (2005)},
  journal   = {Nano Letters. 5 (2005)},
  isbn      = {0587-4246},
  pages     = {2470 -- 2475},
  year      = {2005},
  language  = {en}
}
@article{FoersterDarmoDubeckyetal.1996,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.},
  title     = {Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. F{\"o}rster},
  series = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]},
  journal   = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]},
  address   = {Piscataway, NJ [u.a.]},
  isbn      = {0-7803-3095-1},
  pages     = {67 -- ff.},
  year      = {1996},
  language  = {en}
}
@inproceedings{FoersterStockMontanarietal.2006,
  author    = {F{\"o}rster, Arnold and Stock, J{\"u}rgen and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans},
  title     = {Fabrication and characterisation of GaAs Gunn Diode Chips for applications at 77 GHz in automotive industry},
  url       = {http://nbn-resolving.de/urn:nbn:de:hbz:a96-opus-1462},
  year      = {2006},
  abstract  = {GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.},
  subject      = {Biosensor},
  language  = {en}
}