@article{VitusevichFoersterIndlekoferetal.2000,
  author    = {Vitusevich, S. A. and F{\"o}rster, Arnold and Indlekofer, K.-M. and L{\"u}th, H. and Belyaev, A. E. and Glavin, B. A. and Konakova, R. V.},
  title     = {Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes},
  series = {Physical Review . B. 61 (2000), H. 16},
  journal   = {Physical Review . B. 61 (2000), H. 16},
  isbn      = {1550-235X},
  pages     = {10898 -- 10904},
  year      = {2000},
  language  = {en}
}
@article{Foerster2003,
  author    = {F{\"o}rster, Arnold},
  title     = {Layer Deposition I},
  series = {Fundamentals of nanoelectronics / Stefan Bl{\"u}gel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums J{\"u}lich : Materie und Material ; 14 ; 34)},
  journal   = {Fundamentals of nanoelectronics / Stefan Bl{\"u}gel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums J{\"u}lich : Materie und Material ; 14 ; 34)},
  publisher = {Forschungszentrum, Zentralbibliothek},
  address   = {J{\"u}lich},
  isbn      = {3-89336-319-X},
  pages     = {C2.1 -- C2.13},
  year      = {2003},
  language  = {en}
}
@article{TillmannFoerster2000,
  author    = {Tillmann, K. and F{\"o}rster, Arnold},
  title     = {Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)},
  series = {Thin Solid Films. 368 (2000), H. 1},
  journal   = {Thin Solid Films. 368 (2000), H. 1},
  isbn      = {0040-6090},
  pages     = {93 -- 104},
  year      = {2000},
  language  = {en}
}
@article{VitusevichFoersterReetzetal.2000,
  author    = {Vitusevich, S. A. and F{\"o}rster, Arnold and Reetz, W. and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V.},
  title     = {Spectral Responsivity of single-quantum-well photodetectors},
  series = {Applied Physics Letters. 77 (2000), H. 1},
  journal   = {Applied Physics Letters. 77 (2000), H. 1},
  isbn      = {1077-3118},
  pages     = {16 -- 18},
  year      = {2000},
  language  = {en}
}
@article{FoersterRosenauerOberstetal.1999,
  author    = {F{\"o}rster, Arnold and Rosenauer, A. and Oberst, W. and Gerthsen, D.},
  title     = {Atomic scale analysis of the indium distribution in InGaAs/GaAs (001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions. Rosenauer, A. ; Oberst, W. ; Gerthsen, D. ; F{\"o}rster, A.},
  series = {Thin Solid Films. 357 (1999)},
  journal   = {Thin Solid Films. 357 (1999)},
  isbn      = {0040-6090},
  pages     = {18 -- 21},
  year      = {1999},
  language  = {en}
}
@article{FoersterDarmoDubeckyetal.1998,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Dubecky, F. and Kordos, P.},
  title     = {Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; F{\"o}rster, A.},
  series = {Applied Physics Letters. 72 (1998), H. 5},
  journal   = {Applied Physics Letters. 72 (1998), H. 5},
  isbn      = {1077-3118},
  pages     = {590 -- 592},
  year      = {1998},
  language  = {en}
}
@article{FoersterLachenmannFridrichetal.1999,
  author    = {F{\"o}rster, Arnold and Lachenmann, S. G. and Fridrich, I. and Sch{\"a}pers, T.},
  title     = {Supression of the surface-inversion layer of p-type InAs. Lachenmann, S. G.; Fridrich, I.; F{\"o}rster, A.; Sch{\"a}pers, Th.},
  series = {Journal of Applied Physics. 85 (1999), H. 12},
  journal   = {Journal of Applied Physics. 85 (1999), H. 12},
  isbn      = {1089-7550},
  pages     = {8242 -- 8246},
  year      = {1999},
  language  = {en}
}
@article{FoersterZamdmerHuetal.1999,
  author    = {F{\"o}rster, Arnold and Zamdmer, N. and Hu, Qing and McIntosh, K. A.},
  title     = {On-chip frequency domain submillimeter-wave transceiver. Zamdmer, N.; Hu, Qing ; McIntosh K. A. ; Verghise, S. ; F{\"o}rster, A.},
  series = {Applied Physics Letters. 75 (1999), H. 24},
  journal   = {Applied Physics Letters. 75 (1999), H. 24},
  isbn      = {1077-3118},
  pages     = {3877 -- 3879},
  year      = {1999},
  language  = {en}
}
@article{FoersterGriebelIndlekoferetal.1998,
  author    = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, K. M. and L{\"u}th, H.},
  title     = {Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; F{\"o}rster, A.; L{\"u}th, H.},
  series = {Journal of Applied Physics. 84 (1998), H. 12},
  journal   = {Journal of Applied Physics. 84 (1998), H. 12},
  isbn      = {1089-7550},
  pages     = {6719 -- 6724},
  year      = {1998},
  language  = {en}
}
@article{FoersterLachenmannKastalskyetal.1998,
  author    = {F{\"o}rster, Arnold and Lachenmann, S. G. and Kastalsky, A. and Uhlisch, D.},
  title     = {Hybrid superconductor/semiconductor step junction with three terminals. Lachenmann, S. G.; Kastalsky, A.; F{\"o}rster A.; Uhlisch, D.; Neurohr, K.; Sch{\"a}pers, Th.},
  series = {Journal of Applied Physics. 83 (1998), H. 12},
  journal   = {Journal of Applied Physics. 83 (1998), H. 12},
  isbn      = {1089-7550},
  pages     = {8077 -- 8079},
  year      = {1998},
  language  = {en}
}
@article{Foerster1995,
  author    = {F{\"o}rster, Arnold},
  title     = {Ultrahigh frequency measurements of magnetic penetration length and surface impedance of YBa2Cu3O7-x microstriplines on Si and GaAs substrates . R{\"u}ders, F; Hollricher, O.; Copetti, C. A. ; F{\"o}rster, A. ; Buchal, Ch. ; Prusseit, W. ; Kinder, H.},
  series = {Journal of Applied Physics. 77 (1995), H. 10},
  journal   = {Journal of Applied Physics. 77 (1995), H. 10},
  isbn      = {1089-7550},
  pages     = {5282 -- 5286},
  year      = {1995},
  language  = {en}
}
@article{FoersterHaukeJakumeitetal.1998,
  author    = {F{\"o}rster, Arnold and Hauke, M. and Jakumeit, J. and Krafft, B.},
  title     = {DX Centers in Al0.3Ga0.7As/GaAs Analyzed by Point Contact Measurements. Hauke, M.; Jakumeit, J.; Krafft, B.; Nimtz, G.; F{\"o}rster, A.; L{\"u}th, H.},
  series = {Journal of Applied Physics. 84 (1998), H. 4},
  journal   = {Journal of Applied Physics. 84 (1998), H. 4},
  isbn      = {1089-7550},
  pages     = {2034 -- 2039},
  year      = {1998},
  language  = {en}
}
@article{MikulicsMarsoCamaraMayorgaetal.2005,
  author    = {Mikulics, M. and Marso, M. and C{\´a}mara Mayorga, I. and Gusten, R. and Stancek, S. and Michael, E. A. and Schieder, R. and Wolter, M. and Buca, D. and F{\"o}rster, Arnold and Kordos, P. and L{\"u}th, H.},
  title     = {Photomixers fabricated on nitrogen-ion-implanted GaAs},
  series = {Applied physics letters. 87 (2005)},
  journal   = {Applied physics letters. 87 (2005)},
  pages     = {041106-1 -- 041106-3},
  year      = {2005},
  language  = {en}
}
@article{FoersterMikulicsWuetal.2006,
  author    = {F{\"o}rster, Arnold and Mikulics, M. and Wu, S. and Marso, M.},
  title     = {Ultrafast and Highly Sensitive Photodetectors With Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs. Mikulics, M.; Wu, S.; Marso, M.; Adam, R.; F{\"o}rster, A.; van der Hart, A.; Kordos, P.; L{\"u}th, H.; Sobolewski, R.},
  series = {IEEE Photonics Technology Letters. 18 (2006), H. 7},
  journal   = {IEEE Photonics Technology Letters. 18 (2006), H. 7},
  pages     = {820 -- 822},
  year      = {2006},
  language  = {en}
}
@article{FoersterMontanariLepsaetal.2005,
  author    = {F{\"o}rster, Arnold and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans},
  title     = {High frequency investigation of graded gap injectors for GaAs Gunn diodes / Simone Montanari ; Arnold F{\"o}rster ; Mihail Ion Lepsa ; Hans L{\"u}th},
  series = {Solid-state electronics. 49 (2005), H. 2},
  journal   = {Solid-state electronics. 49 (2005), H. 2},
  isbn      = {0038-1101},
  pages     = {245 -- 250},
  year      = {2005},
  language  = {en}
}
@article{FoersterMarsoMikulicsetal.2005,
  author    = {F{\"o}rster, Arnold and Marso, M. and Mikulics, V. V. and Adam, R.},
  title     = {Ultrafast Phenomena in Freestanding LT-GaAs Devices. Marso, M.; Mikulics, V. V.; Adam, R.; Wu, S.; Zheng, X.; Camara, I.; Siebe, N. Y.; F{\"o}rster, A.; G{\"u}sten, R.; Kordos, P.; Sobolewski, R.},
  series = {Acta physica Polonica / A. 107 (2005), H. 1},
  journal   = {Acta physica Polonica / A. 107 (2005), H. 1},
  isbn      = {0587-4246},
  pages     = {109 -- 117},
  year      = {2005},
  language  = {en}
}
@article{FoersterWensorraIndlekoferetal.2005,
  author    = {F{\"o}rster, Arnold and Wensorra, J. and Indlekofer, K. M. and L{\"u}th, H.},
  title     = {Resonant tunneling in nanocolumns improved by quantum collimation. Wensorra, J.; Indlekofer, K. M.; F{\"o}rster, A.; L{\"u}th, H.},
  series = {Nano Letters. 5 (2005)},
  journal   = {Nano Letters. 5 (2005)},
  isbn      = {0587-4246},
  pages     = {2470 -- 2475},
  year      = {2005},
  language  = {en}
}
@article{FoersterDarmoDubeckyetal.1996,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.},
  title     = {Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. F{\"o}rster},
  series = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]},
  journal   = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]},
  address   = {Piscataway, NJ [u.a.]},
  isbn      = {0-7803-3095-1},
  pages     = {67 -- ff.},
  year      = {1996},
  language  = {en}
}
@inproceedings{FoersterStockMontanarietal.2006,
  author    = {F{\"o}rster, Arnold and Stock, J{\"u}rgen and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans},
  title     = {Fabrication and characterisation of GaAs Gunn Diode Chips for applications at 77 GHz in automotive industry},
  url       = {http://nbn-resolving.de/urn:nbn:de:hbz:a96-opus-1462},
  year      = {2006},
  abstract  = {GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.},
  subject      = {Biosensor},
  language  = {en}
}