@article{FoersterSpitzerLueth1986, author = {F{\"o}rster, Arnold and Spitzer, A. and L{\"u}th, H.}, title = {The adsorption of fluor-carbon complexes on GaAs(110) studied by electron energy loss spectroscopy}, series = {Surface Science. 172 (1986), H. 1}, journal = {Surface Science. 172 (1986), H. 1}, isbn = {0039-6028}, pages = {174 -- 182}, year = {1986}, language = {en} } @article{FoersterTulkeLueth1987, author = {F{\"o}rster, Arnold and Tulke, A. and L{\"u}th, H.}, title = {The Schottky barrier at the InSb(110)-Sn interface}, series = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 5 (1987), H. 4}, journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 5 (1987), H. 4}, isbn = {1071-1023}, pages = {1054 -- 1056}, year = {1987}, language = {en} } @article{FoersterLueth1987, author = {F{\"o}rster, Arnold and L{\"u}th, H.}, title = {Investigation of the InSb(110)-Sn schottky barrier by means of electron energy loss spectroscopy}, series = {Surface Science. 189-190 (1987)}, journal = {Surface Science. 189-190 (1987)}, isbn = {0039-6028}, pages = {307 -- 314}, year = {1987}, language = {en} } @article{FoersterLayetLueth1988, author = {F{\"o}rster, Arnold and Layet, J. M. and L{\"u}th, H.}, title = {The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) /}, series = {Applied Physics A: Materials Science \& Processing. 47 (1988), H. 1}, journal = {Applied Physics A: Materials Science \& Processing. 47 (1988), H. 1}, isbn = {0947-8396}, pages = {95 -- 97}, year = {1988}, language = {en} } @article{FoersterSchaeferLondschien1988, author = {F{\"o}rster, Arnold and Sch{\"a}fer, B.-J. and Londschien, M.}, title = {Arsenic passivation of MOMBE grown GaAs surfaces / B. -J. Sch{\"a}fer ; A. F{\"o}rster ; M. Londschien ...}, series = {Surface Science. 204 (1988), H. 3}, journal = {Surface Science. 204 (1988), H. 3}, isbn = {0039-6028}, pages = {485 -- 490}, year = {1988}, language = {en} } @book{Foerster1988, author = {F{\"o}rster, Arnold}, title = {Anwendung der hochaufl{\"o}senden Elektronenenergieverlustspektroskopie zum Studium von Halbleiterschichtsystemen. - (Berichte der Kernforschungsanlage J{\"u}lich / Kernforschungsanlage ; 2247)}, publisher = {Zentralbibliothek der Kernforschungsanlage}, address = {J{\"u}lich}, pages = {104 S. : graph. Darst.}, year = {1988}, language = {de} } @article{FoersterRizziLueth1989, author = {F{\"o}rster, Arnold and Rizzi, Angela and L{\"u}th, H.}, title = {Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. F{\"o}rster ; H. L{\"u}th}, series = {Surface Science. 211 - 212 (1989)}, journal = {Surface Science. 211 - 212 (1989)}, isbn = {0039-6028}, pages = {620 -- 629}, year = {1989}, language = {en} } @article{FoersterLayetLueth1989, author = {F{\"o}rster, Arnold and Layet, J. M. and L{\"u}th, H.}, title = {Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy}, series = {Applied Surface Science. 41 - 42 (1989)}, journal = {Applied Surface Science. 41 - 42 (1989)}, isbn = {0169-4332}, pages = {306 -- 311}, year = {1989}, language = {en} } @article{FoersterLueth1989, author = {F{\"o}rster, Arnold and L{\"u}th, H.}, title = {Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces}, series = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 7 (1989), H. 4}, journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 7 (1989), H. 4}, isbn = {1071-1023}, pages = {720 -- 724}, year = {1989}, language = {en} } @article{FoersterBruggerMeiners1991, author = {F{\"o}rster, Arnold and Brugger, H. and Meiners, U.}, title = {High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. W{\"o}lk ... A. F{\"o}rster ...}, series = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman}, journal = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman}, publisher = {Inst. of Electrical and Electronics Engineers}, address = {Piscataway, NJ}, isbn = {0-7803-0491-8}, pages = {39 -- ff.}, year = {1991}, language = {en} } @article{FoersterZettlerMikkelsenetal.1992, author = {F{\"o}rster, Arnold and Zettler, J.-T. and Mikkelsen, H. and Leo, K.}, title = {Modulated ellipsometric measurements and transfer-matrix calculation of the field-dependent dielectric function of a multiple quantum well / J.-Th. Zettler ; H. Mikkelsen ; K. Leo ... A. F{\"o}rster}, series = {Physical Review B . 46 (1992), H. 24}, journal = {Physical Review B . 46 (1992), H. 24}, isbn = {0163-1829}, pages = {15955 -- 15962}, year = {1992}, language = {en} } @article{FoersterLentzenGerthsen1992, author = {F{\"o}rster, Arnold and Lentzen, M. and Gerthsen, D.}, title = {Growth mode and strain relaxation during the initial stage of InxGa1-xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. F{\"o}rster ...}, series = {Applied physics letters. 60 (1992), H. 1}, journal = {Applied physics letters. 60 (1992), H. 1}, isbn = {0003-6951}, pages = {74 -- 76}, year = {1992}, language = {en} } @article{FoersterReschEsseraetal.1992, author = {F{\"o}rster, Arnold and Resch, U. and Essera, N. and Raptis, Y. S.}, title = {Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfaces / U. Resch ; N. Essera ; Y. S. Raptis ... A. F{\"o}rster ...}, series = {Surface Science. 269-270 (1992)}, journal = {Surface Science. 269-270 (1992)}, isbn = {0039-6028}, pages = {797 -- 803}, year = {1992}, language = {en} } @article{FoersterLoheLeuther1993, author = {F{\"o}rster, Arnold and Lohe, C. and Leuther, A.}, title = {Quasi-two-dimensional plasmons of a single \&\#948;-doped layer in GaAs studied by high-resolution electron-energy-loss spectroscopy / C. Lohe ; A. Leuther ; A. F{\"o}rster ...}, series = {Physical Review B . 47 (1993), H. 7}, journal = {Physical Review B . 47 (1993), H. 7}, isbn = {0163-1829}, pages = {3819 -- 3826}, year = {1993}, language = {en} } @article{FoersterKohleickLueth1993, author = {F{\"o}rster, Arnold and Kohleick, R. and L{\"u}th, H.}, title = {Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure / R. Kohleick ; A. F{\"o}rster ; H. L{\"u}th}, series = {Physical Review B . 48 (1993), H. 20}, journal = {Physical Review B . 48 (1993), H. 20}, isbn = {0163-1829}, pages = {15138 -- 15143}, year = {1993}, language = {en} } @article{FoersterSchaepersMuelleretal.1993, author = {F{\"o}rster, Arnold and Sch{\"a}pers, T. and M{\"u}ller, F. and Lengeler, B.}, title = {Reflection and transmission of ballistic electrons at a potential barrier / Sch{\"a}pers, T. ; M{\"u}ller, F. ; F{\"o}rster, A. ; Lengeler, B. ; L{\"u}th, H.}, series = {Superlattices and microstructures . 14 (1993), H. 1}, journal = {Superlattices and microstructures . 14 (1993), H. 1}, isbn = {0749-6036}, pages = {57}, year = {1993}, language = {en} } @article{FoersterReschScholz1993, author = {F{\"o}rster, Arnold and Resch, U. and Scholz, S. M.}, title = {Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy / U. Resch ; S. M. Scholz ; U. Rossow ... A. F{\"o}rter ...}, series = {Applied Surface Science. 63 (1993), H. 1-4}, journal = {Applied Surface Science. 63 (1993), H. 1-4}, isbn = {0169-4332}, pages = {106 -- 110}, year = {1993}, language = {en} } @article{FoersterLangeGerthsen1993, author = {F{\"o}rster, Arnold and Lange, J. and Gerthsen, D.}, title = {Effect of interface roughness and scattering on the performance of AlAs/InGaAs resonant tunneling diodes}, series = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 11 (1993), H. 4}, journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 11 (1993), H. 4}, isbn = {1071-1023}, pages = {1743 -- 1747}, year = {1993}, language = {en} } @article{FoersterOhlerMoers1993, author = {F{\"o}rster, Arnold and Ohler, C. and Moers, J.}, title = {Strain dependence of the valence-band offset in arsenide compound heterojunctions determined by photoelectron spectroscopy / C. Ohler ; J. Moers ; A. F{\"o}rster ...}, series = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 13 (1993), H. 4}, journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 13 (1993), H. 4}, isbn = {1071-1023}, pages = {1728 -- 1735}, year = {1993}, language = {en} } @article{FoersterDiekerGerthsen1993, author = {F{\"o}rster, Arnold and Dieker, C. and Gerthsen, D.}, title = {Microstructure of the AlAs/GaAs and AlAs/InGaAs resonant tunneling diodes and its correlation with the electrical properties / C. Dieker ; D. Gerthsen ; A. F{\"o}rster ...}, series = {Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134)}, journal = {Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134)}, publisher = {Institute of Physics}, address = {Bristol [u.a.]}, isbn = {0-7503-0290-9}, pages = {253 -- ff.}, year = {1993}, language = {en} }