@article{FoersterAdamMikulicsetal.2002, author = {F{\"o}rster, Arnold and Adam, R. and Mikulics, M. and Schelten, J.}, title = {Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R.}, series = {Applied Physics Letters. 81 (2002), H. 18}, journal = {Applied Physics Letters. 81 (2002), H. 18}, isbn = {1077-3118}, pages = {3485 -- 3487}, year = {2002}, language = {en} } @article{FoersterAppenzellerSchroer1996, author = {F{\"o}rster, Arnold and Appenzeller, J. and Schroer, C.}, title = {Electron interference in a T-shaped quantum transistor based on Schottky-gate technology / J. Appenzeller ; Ch. Schroer ; Th. Sch{\"a}pers ... A. F{\"o}rster ...}, series = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15}, journal = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15}, isbn = {1095-3795}, pages = {9959 -- 9963}, year = {1996}, language = {en} } @article{FoersterBelyaevVitusevichetal.2002, author = {F{\"o}rster, Arnold and Belyaev, A. E. and Vitusevich, S.A. and Eaves, L.}, title = {Photoresponse spectra in p-i-n diodes containing quantum dots. Belyaev, A.E.; Vitusevich, S.A.; Eaves, L.; Main, P.C.; Henini, M.; F{\"o}rster, A.; Reetz, W.; Danylyuk, S.V.}, series = {Nanotechnology. 13 (2002), H. 1}, journal = {Nanotechnology. 13 (2002), H. 1}, pages = {94 -- 96}, year = {2002}, language = {en} } @article{FoersterBertuccioPullia1997, author = {F{\"o}rster, Arnold and Bertuccio, G. and Pullia, A.}, title = {Pixel X-ray detectors in epitaxial gallium arsenide withhigh-energy resolution capabilities (Fano factor experimentaldetermination) / G. Bertuccio ; A. Pullia ; J. Lauter ; A. F{\"o}rster ...}, series = {IEEE transactions on nuclear science. 44 (1997), H. 1}, journal = {IEEE transactions on nuclear science. 44 (1997), H. 1}, isbn = {0018-9499}, pages = {1 -- 5}, year = {1997}, language = {en} } @article{FoersterBetkoKordosetal.1994, author = {F{\"o}rster, Arnold and Betko, J. and Kordos, P. and Kuklovsky, S.}, title = {Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. F{\"o}rster ...}, series = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, journal = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, isbn = {0921-5107}, pages = {147 -- 150}, year = {1994}, language = {en} } @article{FoersterBetkoMorvicetal.1999, author = {F{\"o}rster, Arnold and Betko, J. and Morvic, M. and Novak, J.}, title = {Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; F{\"o}rster, A.; Kordos, P.}, series = {Journal of Applied Physics. 86 (1999), H. 11}, journal = {Journal of Applied Physics. 86 (1999), H. 11}, isbn = {1089-7550}, pages = {6243 -- 6248}, year = {1999}, language = {en} } @article{FoersterBetkoMorvicetal.1996, author = {F{\"o}rster, Arnold and Betko, J. and Morvic, M. and Novak, J.}, title = {Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Nov{\´a}k ... A. F{\"o}rster ...}, series = {Applied physics letters. 69 (1996), H. 17}, journal = {Applied physics letters. 69 (1996), H. 17}, isbn = {0003-6951}, pages = {2563 -- 2565}, year = {1996}, language = {en} } @article{FoersterBruggerMeiners1991, author = {F{\"o}rster, Arnold and Brugger, H. and Meiners, U.}, title = {High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. W{\"o}lk ... A. F{\"o}rster ...}, series = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman}, journal = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman}, publisher = {Inst. of Electrical and Electronics Engineers}, address = {Piscataway, NJ}, isbn = {0-7803-0491-8}, pages = {39 -- ff.}, year = {1991}, language = {en} } @article{FoersterBruggerMeinersetal.1994, author = {F{\"o}rster, Arnold and Brugger, H. and Meiners, U. and Diniz, R.}, title = {Hydrostatic pressure sensors based on solid state tunneling devices / H. Brugger; U. Meiners ; R. Diniz ... A. F{\"o}rster ...}, series = {Solid state electronics. 37 (1994), H. 4-6}, journal = {Solid state electronics. 37 (1994), H. 4-6}, isbn = {0038-1101}, pages = {801 -- 804}, year = {1994}, language = {en} } @article{FoersterCambelKicinetal.2002, author = {F{\"o}rster, Arnold and Cambel, V. and Kicin, S. and Kuliffayov{\´a}, M.}, title = {Preparation of patterned GaAs structures for MEMS and MOEMS. Cambel, V.; Kicin, S.; Kuliffayov{\´a}, M.; Kov{\´a}cov{\´a}, E.; Nov{\´a}k, J.; Kostic, I.; F{\"o}rster, A.}, series = {Materials Science and Engineering: C. 19 (2002), H. 2}, journal = {Materials Science and Engineering: C. 19 (2002), H. 2}, isbn = {0928-4931}, pages = {161 -- 165}, year = {2002}, language = {en} } @article{FoersterDarmoDubeckyetal.1998, author = {F{\"o}rster, Arnold and Darmo, J. and Dubecky, F. and Kordos, P.}, title = {Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; F{\"o}rster, A.}, series = {Applied Physics Letters. 72 (1998), H. 5}, journal = {Applied Physics Letters. 72 (1998), H. 5}, isbn = {1077-3118}, pages = {590 -- 592}, year = {1998}, language = {en} } @article{FoersterDarmoDubeckyetal.1996, author = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.}, title = {Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. F{\"o}rster}, series = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]}, journal = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]}, address = {Piscataway, NJ [u.a.]}, isbn = {0-7803-3095-1}, pages = {67 -- ff.}, year = {1996}, language = {en} } @article{FoersterDarmoDubeckyetal.1994, author = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.}, title = {Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubeck{\´y} ; P. Kordos ; A. F{\"o}rster ...}, series = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, journal = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, isbn = {0921-5107}, pages = {393 -- 396}, year = {1994}, language = {en} } @article{FoersterDarmoSchaferetal.2002, author = {F{\"o}rster, Arnold and Darmo, J. and Schafer, F. and Kordos, P.}, title = {Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R}, series = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza}, journal = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-7276-X}, pages = {87 -- 90}, year = {2002}, language = {en} } @article{FoersterDekorsyKim1996, author = {F{\"o}rster, Arnold and Dekorsy, T. and Kim, A. T. M.}, title = {Subpicosecond coherent carrier-phonon dynamics in semiconductor heterostructures / T. Dekorsy ; A. M. T. Kim ; G. C. Cho ... A. F{\"o}rster}, series = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 3}, journal = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 3}, isbn = {1095-3795}, pages = {1531 -- 1538}, year = {1996}, language = {en} } @article{FoersterDiekerGerthsen1993, author = {F{\"o}rster, Arnold and Dieker, C. and Gerthsen, D.}, title = {Microstructure of the AlAs/GaAs and AlAs/InGaAs resonant tunneling diodes and its correlation with the electrical properties / C. Dieker ; D. Gerthsen ; A. F{\"o}rster ...}, series = {Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134)}, journal = {Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134)}, publisher = {Institute of Physics}, address = {Bristol [u.a.]}, isbn = {0-7503-0290-9}, pages = {253 -- ff.}, year = {1993}, language = {en} } @article{FoersterDubeckyDarmo1994, author = {F{\"o}rster, Arnold and Dubecky, F.. and Darmo, J.}, title = {Investigation of deep-level states in bulk and low temperature MBE semiinsulating GaAs by admittance transient spectroscopy / F. Dubecky ; J. Darmo ; M. Darviras ; A. F{\"o}rster ...}, series = {Semi-insulating III-V materials, Ixtapa, Mexico 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21 - 24 April 1992 / ed. by C. J. Miner ...}, journal = {Semi-insulating III-V materials, Ixtapa, Mexico 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21 - 24 April 1992 / ed. by C. J. Miner ...}, publisher = {Inst. of Physics Publ.}, address = {Bristol [u.a.]}, isbn = {0-7503-0242-9}, pages = {265 -- 272}, year = {1994}, language = {en} } @article{FoersterDoehlerHeber1998, author = {F{\"o}rster, Arnold and D{\"o}hler, G. H and Heber, J.}, title = {Hot electrons in n-i-p.i-based devices / G. H. D{\"o}hler ; J. Heber ... A. F{\"o}rster ...}, series = {Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)}, journal = {Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)}, publisher = {Clarendon Press}, address = {Oxford}, isbn = {0-19-850058-0}, pages = {478 -- 504}, year = {1998}, language = {en} } @article{FoersterGriebelIndlekoferetal.1998, author = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, K. M. and L{\"u}th, H.}, title = {Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; F{\"o}rster, A.; L{\"u}th, H.}, series = {Journal of Applied Physics. 84 (1998), H. 12}, journal = {Journal of Applied Physics. 84 (1998), H. 12}, isbn = {1089-7550}, pages = {6719 -- 6724}, year = {1998}, language = {en} } @article{FoersterGriebelIndlekoferetal.1999, author = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, K.M. and L{\"u}th, H.}, title = {Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; F{\"o}rster, A.; L{\"u}th, H.}, series = {Journal of Physics D: Applied Physics. 32 (1999), H. 14}, journal = {Journal of Physics D: Applied Physics. 32 (1999), H. 14}, isbn = {1361-6463}, pages = {1729 -- 1733}, year = {1999}, language = {en} }