@article{FoersterDekorsyKim1996, author = {F{\"o}rster, Arnold and Dekorsy, T. and Kim, A. T. M.}, title = {Subpicosecond coherent carrier-phonon dynamics in semiconductor heterostructures / T. Dekorsy ; A. M. T. Kim ; G. C. Cho ... A. F{\"o}rster}, series = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 3}, journal = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 3}, isbn = {1095-3795}, pages = {1531 -- 1538}, year = {1996}, language = {en} } @article{FoersterDiekerGerthsen1993, author = {F{\"o}rster, Arnold and Dieker, C. and Gerthsen, D.}, title = {Microstructure of the AlAs/GaAs and AlAs/InGaAs resonant tunneling diodes and its correlation with the electrical properties / C. Dieker ; D. Gerthsen ; A. F{\"o}rster ...}, series = {Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134)}, journal = {Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134)}, publisher = {Institute of Physics}, address = {Bristol [u.a.]}, isbn = {0-7503-0290-9}, pages = {253 -- ff.}, year = {1993}, language = {en} } @article{FoersterDubeckyDarmo1994, author = {F{\"o}rster, Arnold and Dubecky, F.. and Darmo, J.}, title = {Investigation of deep-level states in bulk and low temperature MBE semiinsulating GaAs by admittance transient spectroscopy / F. Dubecky ; J. Darmo ; M. Darviras ; A. F{\"o}rster ...}, series = {Semi-insulating III-V materials, Ixtapa, Mexico 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21 - 24 April 1992 / ed. by C. J. Miner ...}, journal = {Semi-insulating III-V materials, Ixtapa, Mexico 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21 - 24 April 1992 / ed. by C. J. Miner ...}, publisher = {Inst. of Physics Publ.}, address = {Bristol [u.a.]}, isbn = {0-7503-0242-9}, pages = {265 -- 272}, year = {1994}, language = {en} } @article{FoersterDoehlerHeber1998, author = {F{\"o}rster, Arnold and D{\"o}hler, G. H and Heber, J.}, title = {Hot electrons in n-i-p.i-based devices / G. H. D{\"o}hler ; J. Heber ... A. F{\"o}rster ...}, series = {Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)}, journal = {Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)}, publisher = {Clarendon Press}, address = {Oxford}, isbn = {0-19-850058-0}, pages = {478 -- 504}, year = {1998}, language = {en} } @article{FoersterGriebelIndlekoferetal.1998, author = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, K. M. and L{\"u}th, H.}, title = {Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; F{\"o}rster, A.; L{\"u}th, H.}, series = {Journal of Applied Physics. 84 (1998), H. 12}, journal = {Journal of Applied Physics. 84 (1998), H. 12}, isbn = {1089-7550}, pages = {6719 -- 6724}, year = {1998}, language = {en} } @article{FoersterGriebelIndlekoferetal.1999, author = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, K.M. and L{\"u}th, H.}, title = {Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; F{\"o}rster, A.; L{\"u}th, H.}, series = {Journal of Physics D: Applied Physics. 32 (1999), H. 14}, journal = {Journal of Physics D: Applied Physics. 32 (1999), H. 14}, isbn = {1361-6463}, pages = {1729 -- 1733}, year = {1999}, language = {en} } @article{FoersterGriebelIndlekoferetal.1998, author = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, M. and L{\"u}th, H.}, title = {Transport through a buried double barrier single electron transistor at low temperatures}, series = {Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4}, journal = {Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4}, isbn = {1386-9477}, pages = {502 -- 506}, year = {1998}, language = {en} } @article{FoersterHardtdegenUngermanns1995, author = {F{\"o}rster, Arnold and Hardtdegen, Hilde and Ungermanns, C.}, title = {Comparative investigation of electrical and optical characteristics of AlxGa1-xAs/GaAs structures deposited by LP-MOVPE and MBE / H. Hardtdegen ; M. Hollfelder ; C. Ungermanns ... A. F{\"o}rster ...}, series = {Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)}, journal = {Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)}, publisher = {Institute of Physics}, address = {Bristol [u.a.]}, isbn = {0-7503-0226-7}, pages = {81 -- ff.}, year = {1995}, language = {en} } @article{FoersterHartmannDiekeretal.1998, author = {F{\"o}rster, Arnold and Hartmann, A. and Dieker, Ch. and Hollfelder, M.}, title = {Spontaneous formation of tilted AlGaAS/GaAs superlattice during AlGaAs growth. Hartmann, A.; Dieker, Ch.; Hollfelder, M.; Hardtdegen, H.; F{\"o}rster, A.; L{\"u}th, H.}, series = {Applied Surface Science. 123-124 (1998)}, journal = {Applied Surface Science. 123-124 (1998)}, isbn = {0169-4332}, pages = {704 -- 709}, year = {1998}, language = {en} } @article{FoersterHaukeJakumeitetal.1998, author = {F{\"o}rster, Arnold and Hauke, M. and Jakumeit, J. and Krafft, B.}, title = {DX Centers in Al0.3Ga0.7As/GaAs Analyzed by Point Contact Measurements. Hauke, M.; Jakumeit, J.; Krafft, B.; Nimtz, G.; F{\"o}rster, A.; L{\"u}th, H.}, series = {Journal of Applied Physics. 84 (1998), H. 4}, journal = {Journal of Applied Physics. 84 (1998), H. 4}, isbn = {1089-7550}, pages = {2034 -- 2039}, year = {1998}, language = {en} } @article{FoersterHuVerghese1996, author = {F{\"o}rster, Arnold and Hu, Quing and Verghese, S.}, title = {High-frequency (f ~ 1 THz) studies of quantum-effect devices / Qing Hu ; S. Verghese ; R. A. Wyss ... A. F{\"o}rster}, series = {Semiconductor science and technology. 11 (1996), H. 12}, journal = {Semiconductor science and technology. 11 (1996), H. 12}, isbn = {1361-6641}, pages = {1888 -- 1894}, year = {1996}, language = {en} } @article{FoersterIndlekoferLange1996, author = {F{\"o}rster, Arnold and Indlekofer, K. and Lange, J.}, title = {Theory of single-electron tunneling in resonant-tunneling diodes including scattering and multiple subbands at finite temperature / K. M. Indlekofer ; J. Lange ; A. F{\"o}rster ...}, series = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 11}, journal = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 11}, isbn = {1095-3795}, pages = {7392 -- 7402}, year = {1996}, language = {en} } @article{FoersterIndlekoferLueth2002, author = {F{\"o}rster, Arnold and Indlekofer, K.M. and L{\"u}th, H.}, title = {Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; F{\"o}rster, A.; L{\"u}th, H.}, series = {Physica B: Condensed Matter. 314 (2002), H. 1-4}, journal = {Physica B: Condensed Matter. 314 (2002), H. 1-4}, isbn = {0921-4526}, pages = {499 -- 502}, year = {2002}, language = {en} } @article{FoersterJanssenRoer1999, author = {F{\"o}rster, Arnold and Janssen, G. and Roer, T. G. van de}, title = {Logic Circuits with reduced complexity based on devices with higher functionality / G. Janssen ; T. G. van de Roer ; W. Prost ... A. F{\"o}rster}, series = {Proceedings / STW/SAFE 2nd Annual Workshop on Semiconductor Advances for Future Electronics, Safe '99 - ProRISC/IEEE 10th Annual Workshop on Circuits, Systems and Signal Processing, ProRISC 99 : November 24 - 26, 1999, Mierlo, The Netherlands [Elektronische Ressource]}, journal = {Proceedings / STW/SAFE 2nd Annual Workshop on Semiconductor Advances for Future Electronics, Safe '99 - ProRISC/IEEE 10th Annual Workshop on Circuits, Systems and Signal Processing, ProRISC 99 : November 24 - 26, 1999, Mierlo, The Netherlands [Elektronische Ressource]}, publisher = {Technology Foundation, STW}, address = {Utrecht}, pages = {219}, year = {1999}, language = {en} } @article{FoersterKicinCambeletal.2002, author = {F{\"o}rster, Arnold and Kicin, S and Cambel, V. and Kuliffayova, M.}, title = {Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. Kicin, S.; Cambel, V.; Kuliffayova, M.; Gregusova, D.; Kovacova, E.; Novak, J.; Kostic, I.; Forster, A.}, series = {Journal of Applied Physics. 91 (2002), H. 2}, journal = {Journal of Applied Physics. 91 (2002), H. 2}, isbn = {1089-7550}, pages = {878 -- 880}, year = {2002}, language = {en} } @article{FoersterKiesslichWackeretal.2003, author = {F{\"o}rster, Arnold and Kiesslich, G. and Wacker, A. and Scholl, E.}, title = {Nonlinear charging effect of quantum dots in a p-i-n diode. Kiesslich, G.; Wacker, A.; Scholl, E.; Vitusevich, S.A.; Belyaev, A.E.; Danylyuk, S.V.; Forster, A.; Klein, N.; Henini, M.}, series = {Physical Review B. 68 (2003)}, journal = {Physical Review B. 68 (2003)}, isbn = {1550-235X}, year = {2003}, language = {en} } @article{FoersterKlemradtFunkeetal.1996, author = {F{\"o}rster, Arnold and Klemradt, U. and Funke, M. and Fromm, M}, title = {Growth-induced interface roughness of GaAs/AlAs-layers studied by X-ray scattering under grazing angles / U. Klemradt ; M. Funke ; M. Fromm ... A F{\"o}rster}, series = {Physica B: condensed matter. 221 (1996), H. 1-4}, journal = {Physica B: condensed matter. 221 (1996), H. 1-4}, isbn = {0921-4526}, pages = {27 -- 33}, year = {1996}, language = {en} } @article{FoersterKohleickLueth1993, author = {F{\"o}rster, Arnold and Kohleick, R. and L{\"u}th, H.}, title = {Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure / R. Kohleick ; A. F{\"o}rster ; H. L{\"u}th}, series = {Physical Review B . 48 (1993), H. 20}, journal = {Physical Review B . 48 (1993), H. 20}, isbn = {0163-1829}, pages = {15138 -- 15143}, year = {1993}, language = {en} } @article{FoersterKordosBetko1995, author = {F{\"o}rster, Arnold and Kordos, P. and Betko, J.}, title = {Semi-insulating GaAs layers grown by molecular-beam epitaxy / P. Kordos ; A. F{\"o}rster ; J. Betko ...}, series = {Applied physics letters. 67 (1995), H. 7}, journal = {Applied physics letters. 67 (1995), H. 7}, isbn = {0003-6951}, pages = {983 -- 985}, year = {1995}, language = {en} } @article{FoersterKordosBetko1995, author = {F{\"o}rster, Arnold and Kordos, P. and Betko, J.}, title = {Electrical and structural characterization of MBE GaAs grown at temperatures between 200 and 600 °C / P. Kordos ; J. Betko; A. F{\"o}rster ...}, series = {Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)}, journal = {Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)}, publisher = {Institute of Physics}, address = {Bristol [u.a.]}, isbn = {0-7503-0226-7}, pages = {295 -- ff.}, year = {1995}, language = {en} }