@article{BaeckerRaueSchusseretal.2012,
  author    = {B{\"a}cker, Matthias and Raue, Markus and Schusser, Sebastian and Jeitner, C. and Breuer, L. and Wagner, P. and Poghossian, Arshak and F{\"o}rster, Arnold and Mang, Thomas and Sch{\"o}ning, Michael Josef},
  title     = {Microfluidic chip with integrated microvalves based on temperature- and pH-responsive hydrogel thin films},
  series = {Physica Status Solidi (a)},
  volume    = {209},
  journal   = {Physica Status Solidi (a)},
  number    = {5},
  publisher = {Wiley-VCH},
  address   = {Weinheim},
  issn      = {1862-6319},
  doi       = {10.1002/pssa.201100763},
  pages     = {839 -- 845},
  year      = {2012},
  abstract  = {Two types of microvalves based on temperature-responsive poly(N-isopropylacrylamide) (PNIPAAm) and pH-responsive poly(sodium acrylate) (PSA) hydrogel films have been developed and tested. The PNIPAAm and PSA hydrogel films were prepared by means of in situ photopolymerization directly inside the fluidic channel of a microfluidic chip fabricated by combining Si and SU-8 technologies. The swelling/shrinking properties and height changes of the PNIPAAm and PSA films inside the fluidic channel were studied at temperatures of deionized water from 14 to 36 °C and different pH values (pH 3-12) of Titrisol buffer, respectively. Additionally, in separate experiments, the lower critical solution temperature (LCST) of the PNIPAAm hydrogel was investigated by means of a differential scanning calorimetry (DSC) and a surface plasmon resonance (SPR) method. Mass-flow measurements have shown the feasibility of the prepared hydrogel films to work as an on-chip integrated temperature- or pH-responsive microvalve capable to switch the flow channel on/off.},
  language  = {en}
}
@article{DarmoSchaefferFoersteretal.2000,
  author    = {Darmo, J. and Sch{\"a}ffer, F. and F{\"o}rster, Arnold and Kordos, P.},
  title     = {Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range},
  series = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]},
  journal   = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {0780359399},
  pages     = {147 -- 150},
  year      = {2000},
  language  = {en}
}
@article{Foerster2000,
  author    = {F{\"o}rster, Arnold},
  title     = {Resonant tunneling diodes operating as modern quantum transport devices},
  series = {Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2},
  journal   = {Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2},
  publisher = {Allied Publ.},
  address   = {New Delhi [u.a.]},
  isbn      = {81-7023-998-2},
  pages     = {966 -- 966},
  year      = {2000},
  language  = {en}
}
@article{FoersterLepsaFreundt2007,
  author    = {F{\"o}rster, Arnold and Lepsa, M. I. and Freundt, D.},
  title     = {Hot electron injector Gunn diode for advanced driver assistance systems},
  series = {Applied physics A: materials science and processing. 87 (2007), H. 3},
  journal   = {Applied physics A: materials science and processing. 87 (2007), H. 3},
  isbn      = {0947-8396},
  pages     = {545 -- 558},
  year      = {2007},
  language  = {en}
}
@article{FoersterStockIndlekofer2002,
  author    = {F{\"o}rster, Arnold and Stock, J. and Indlekofer, K. M.},
  title     = {Perspectives of resonant tunneling diodes},
  series = {Recent research developments in materials science \& engineering/ 1,2},
  journal   = {Recent research developments in materials science \& engineering/ 1,2},
  publisher = {Transworld Research Network},
  address   = {Trivandrum, India},
  isbn      = {81-7895-057-X},
  pages     = {527 -- 556},
  year      = {2002},
  language  = {en}
}
@inproceedings{FoersterStockMontanarietal.2006,
  author    = {F{\"o}rster, Arnold and Stock, J{\"u}rgen and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans},
  title     = {Fabrication and characterisation of GaAs Gunn Diode Chips for applications at 77 GHz in automotive industry},
  url       = {http://nbn-resolving.de/urn:nbn:de:hbz:a96-opus-1462},
  year      = {2006},
  abstract  = {GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.},
  subject      = {Biosensor},
  language  = {en}
}
@article{HodelOrzatiMarsoetal.2000,
  author    = {Hodel, U. and Orzati, A. and Marso, M. and Homann, O. and Fox, A. and Hart, A. v. d. and F{\"o}rster, Arnold and Kordos, P. and L{\"u}th, H.},
  title     = {A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver},
  series = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials},
  journal   = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials},
  publisher = {IEEE Service Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-6320-5},
  pages     = {466 -- 469},
  year      = {2000},
  language  = {en}
}
@article{HoskensTolstikhinFoersteretal.2000,
  author    = {Hoskens, R. C. P. and Tolstikhin, V.I. and F{\"o}rster, Arnold and Roer, T.G. van de},
  title     = {Vertically integrated transistor-laser structure, take 2},
  series = {WOCSDICE 2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece.},
  journal   = {WOCSDICE 2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece.},
  publisher = {Univ. of Michigan},
  address   = {Ann Arbor, Mich.},
  isbn      = {0970311109},
  pages     = {Getr. Z{\"a}hlung [ca. 200 S.]},
  year      = {2000},
  language  = {en}
}
@article{HoskensRoerTolstikhinetal.2000,
  author    = {Hoskens, R.C.P. and Roer, T.G. van de and Tolstikhin, V.I. and F{\"o}rster, Arnold},
  title     = {Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation},
  series = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2},
  journal   = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2},
  publisher = {IEEE Service Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-5947-X},
  pages     = {444 -- 445},
  year      = {2000},
  language  = {en}
}
@article{KrafftFoersterHartetal.2001,
  author    = {Krafft, B. and F{\"o}rster, Arnold and Hart, A. van der and Sch{\"a}pers, T.},
  title     = {Control of Aharonov-Bohm oscillations in a AlGaAs/GaAs ring by asymmetric and symmetric gate biasing},
  series = {Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4},
  journal   = {Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4},
  isbn      = {1386-9477},
  pages     = {635 -- 641},
  year      = {2001},
  language  = {en}
}