@article{SchoeningBiselliSelmeretal.2012, author = {Sch{\"o}ning, Michael Josef and Biselli, Manfred and Selmer, Thorsten and {\"O}hlschl{\"a}ger, Peter and Baumann, Marcus and F{\"o}rster, Arnold and Poghossian, Arshak}, title = {Forschung „zwischen" den Disziplinen: das Institut f{\"u}r Nano- und Biotechnologien}, series = {Analytik news : das Online-Labormagazin f{\"u}r Labor und Analytik}, volume = {Publ. online}, journal = {Analytik news : das Online-Labormagazin f{\"u}r Labor und Analytik}, publisher = {Dr. Beyer Internet-Beratung}, address = {Ober-Ramstadt}, pages = {11 Seiten}, year = {2012}, abstract = {"Biologie trifft Mikroelektronik", das Motto des Instituts f{\"u}r Nano- und Biotechnologien (INB) an der FH Aachen, unterstreicht die zunehmende Bedeutung interdisziplin{\"a}r gepr{\"a}gter Forschungsaktivit{\"a}ten. Der thematische Zusammenschluss grundst{\"a}ndiger Disziplinen, wie die Physik, Elektrotechnik, Chemie, Biologie sowie die Materialwissenschaften, l{\"a}sst neue Forschungsgebiete entstehen, ein herausragendes Beispiel hierf{\"u}r ist die Nanotechnologie: Hier werden neue Werkstoffe und Materialien entwickelt, einzelne Nanopartikel oder Molek{\"u}le und deren Wechselwirkung untersucht oder Schichtstrukturen im Nanometerbereich aufgebaut, die neue und vorher nicht bekannte Eigenschaften hervorbringen. Vor diesem Hintergrund b{\"u}ndelt das im Jahre 2006 gegr{\"u}ndete INB die an der FH Aachen vorhandenen Kompetenzen von derzeit insgesamt sieben Laboratorien auf den Gebieten der Halbleitertechnik und Nanoelektronik, Nanostrukturen und DNA-Sensorik, der Chemo- und Biosensorik, der Enzymtechnologie, der Mikrobiologie und Pflanzenbiotechnologie, der Zellkulturtechnik, sowie der Roten Biotechnologie synergetisch. In der Nano- und Biotechnologie steckt außergew{\"o}hnliches Potenzial! Nicht zuletzt deshalb stellen sich die Forscher der Herausforderung, in diesem Bereich gemeinsam zu forschen und Schnittstellen zu nutzen, um so bei der Gestaltung neuartiger Ideen und Produkte mitzuwirken, die zuk{\"u}nftig unser allt{\"a}gliches Leben ver{\"a}ndern werden. Im Folgenden werden die verschiedenen Forschungsbereiche kurz zusammenfassend vorgestellt und vorhandene Interaktionen anhand von exemplarisch ausgew{\"a}hlten, aktuellen Forschungsprojekten skizziert.}, language = {de} } @article{SabitovaEbertLenzetal.2013, author = {Sabitova, A. and Ebert, Ph. and Lenz, A. and Schaafhausen, S. and Ivanova, L. and D{\"a}hne, M. and Hoffmann, A. and Dunin-Borkowski, R. E. and F{\"o}rster, Arnold and Grandidier, B. and Eisele, H.}, title = {Intrinsic bandgap of cleaved ZnO(112¯0) surfaces}, series = {Applied physics letters}, volume = {Vol. 102}, journal = {Applied physics letters}, issn = {1077-3118 (E-Journal); 0003-6951 (Print)}, pages = {021608}, year = {2013}, language = {en} } @article{BaeckerRaueSchusseretal.2012, author = {B{\"a}cker, Matthias and Raue, Markus and Schusser, Sebastian and Jeitner, C. and Breuer, L. and Wagner, P. and Poghossian, Arshak and F{\"o}rster, Arnold and Mang, Thomas and Sch{\"o}ning, Michael Josef}, title = {Microfluidic chip with integrated microvalves based on temperature- and pH-responsive hydrogel thin films}, series = {Physica Status Solidi (a)}, volume = {209}, journal = {Physica Status Solidi (a)}, number = {5}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {1862-6319}, doi = {10.1002/pssa.201100763}, pages = {839 -- 845}, year = {2012}, abstract = {Two types of microvalves based on temperature-responsive poly(N-isopropylacrylamide) (PNIPAAm) and pH-responsive poly(sodium acrylate) (PSA) hydrogel films have been developed and tested. The PNIPAAm and PSA hydrogel films were prepared by means of in situ photopolymerization directly inside the fluidic channel of a microfluidic chip fabricated by combining Si and SU-8 technologies. The swelling/shrinking properties and height changes of the PNIPAAm and PSA films inside the fluidic channel were studied at temperatures of deionized water from 14 to 36 °C and different pH values (pH 3-12) of Titrisol buffer, respectively. Additionally, in separate experiments, the lower critical solution temperature (LCST) of the PNIPAAm hydrogel was investigated by means of a differential scanning calorimetry (DSC) and a surface plasmon resonance (SPR) method. Mass-flow measurements have shown the feasibility of the prepared hydrogel films to work as an on-chip integrated temperature- or pH-responsive microvalve capable to switch the flow channel on/off.}, language = {en} } @article{FoersterLepsaFreundt2007, author = {F{\"o}rster, Arnold and Lepsa, M. I. and Freundt, D.}, title = {Hot electron injector Gunn diode for advanced driver assistance systems}, series = {Applied physics A: materials science and processing. 87 (2007), H. 3}, journal = {Applied physics A: materials science and processing. 87 (2007), H. 3}, isbn = {0947-8396}, pages = {545 -- 558}, year = {2007}, language = {en} } @article{SrnanekGeurtsLentzeetal.2004, author = {Srnanek, R. and Geurts, J. and Lentze, M. and Irmer, G. and Donoval, D. and Brdecka, P. and Kordos, P. and F{\"o}rster, Arnold and Sciana, B. and Radziewicz, D. and Tlaczala, M.}, title = {Study of d-doped GaAs layers by micro-Raman spectroscopy on bevelled samples}, series = {Applied surface science . 230 (2004), H. 1 -4}, journal = {Applied surface science . 230 (2004), H. 1 -4}, isbn = {0169-4332}, pages = {379 -- 385}, year = {2004}, language = {en} } @article{MikulicsAdamKordosetal.2005, author = {Mikulics, M. and Adam, R. and Kordos, P. and F{\"o}rster, Arnold and L{\"u}th, H. and Wu, S. and Zheng, X. and Sobolewski, R.}, title = {Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates}, series = {IEEE photonics technology letters : IEEE PTL. 17 (2005), H. 8}, journal = {IEEE photonics technology letters : IEEE PTL. 17 (2005), H. 8}, isbn = {1041-1135}, pages = {1725 -- 1727}, year = {2005}, language = {en} } @article{MaezawaFoerster2003, author = {Maezawa, Koichi and F{\"o}rster, Arnold}, title = {Quantum transport devices based on resonant tunneling}, series = {Nanoelectronics and information technology : advanced electronic materials and novel devices / Rainer Waser (ed.).}, journal = {Nanoelectronics and information technology : advanced electronic materials and novel devices / Rainer Waser (ed.).}, publisher = {Wiley-VCH}, address = {Weinheim}, isbn = {3-527-40363-9}, pages = {407 -- 424}, year = {2003}, language = {en} } @article{MikulicsCamaraHardtetal.2004, author = {Mikulics, M. and Camara, I. and Hardt, A. van der and Fox, A. and F{\"o}rster, Arnold and Gusten, R. and L{\"u}th, H. and Kordos, P.}, title = {Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs}, series = {Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald}, journal = {Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-8335-7}, pages = {231 -- 234}, year = {2004}, language = {en} } @article{ZatkoDubeckyBohaceketal.2004, author = {Zatko, B. and Dubeck{\´y}, F. and Bohacek, P. and Gombia, E. and Frigeri, P. and Mosca, R. and Franchi, S. and Huarn, J. and Nescas, V. and Sekacova, M. and F{\"o}rster, Arnold and Kordos, P.}, title = {On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs}, series = {Nuclear instruments and methods in physics research, Section A. 531 (2004), H. 1-2}, journal = {Nuclear instruments and methods in physics research, Section A. 531 (2004), H. 1-2}, isbn = {0168-9002}, pages = {111 -- 120}, year = {2004}, language = {en} } @article{Foerster2000, author = {F{\"o}rster, Arnold}, title = {Resonant tunneling diodes operating as modern quantum transport devices}, series = {Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2}, journal = {Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2}, publisher = {Allied Publ.}, address = {New Delhi [u.a.]}, isbn = {81-7023-998-2}, pages = {966 -- 966}, year = {2000}, language = {en} } @article{VitusevichFoersterReetzetal.2000, author = {Vitusevich, S. A. and F{\"o}rster, Arnold and Reetz, W. and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V.}, title = {Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode}, series = {Nanotechnology. 11 (2000), H. 4}, journal = {Nanotechnology. 11 (2000), H. 4}, isbn = {1361-6528}, pages = {305 -- 308}, year = {2000}, language = {en} } @article{SchmidtTonnesmannFoersteretal.2000, author = {Schmidt, R. and Tonnesmann, A. and F{\"o}rster, Arnold and Grimm, M. and Kordos, P. and L{\"u}th, H.}, title = {Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer}, series = {8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society}, journal = {8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-6550-X}, pages = {95 -- 98}, year = {2000}, language = {en} } @article{RosenauerOberstLitvinovetal.2000, author = {Rosenauer, A. and Oberst, W. and Litvinov, D. and Gerthsen, D. and F{\"o}rster, Arnold and Schmidt, R.}, title = {Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy}, series = {Physical Review B. 61 (2000), H. 12}, journal = {Physical Review B. 61 (2000), H. 12}, isbn = {1095-3795}, pages = {8276 -- 8288}, year = {2000}, language = {en} } @article{HoskensTolstikhinFoersteretal.2000, author = {Hoskens, R. C. P. and Tolstikhin, V.I. and F{\"o}rster, Arnold and Roer, T.G. van de}, title = {Vertically integrated transistor-laser structure, take 2}, series = {WOCSDICE 2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece.}, journal = {WOCSDICE 2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece.}, publisher = {Univ. of Michigan}, address = {Ann Arbor, Mich.}, isbn = {0970311109}, pages = {Getr. Z{\"a}hlung [ca. 200 S.]}, year = {2000}, language = {en} } @article{DarmoSchaefferFoersteretal.2000, author = {Darmo, J. and Sch{\"a}ffer, F. and F{\"o}rster, Arnold and Kordos, P.}, title = {Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range}, series = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]}, journal = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {0780359399}, pages = {147 -- 150}, year = {2000}, language = {en} } @article{HodelOrzatiMarsoetal.2000, author = {Hodel, U. and Orzati, A. and Marso, M. and Homann, O. and Fox, A. and Hart, A. v. d. and F{\"o}rster, Arnold and Kordos, P. and L{\"u}th, H.}, title = {A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver}, series = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials}, journal = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-6320-5}, pages = {466 -- 469}, year = {2000}, language = {en} } @article{HoskensRoerTolstikhinetal.2000, author = {Hoskens, R.C.P. and Roer, T.G. van de and Tolstikhin, V.I. and F{\"o}rster, Arnold}, title = {Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation}, series = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2}, journal = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-5947-X}, pages = {444 -- 445}, year = {2000}, language = {en} } @article{StockMalindretosIndlekoferetal.2001, author = {Stock, J. and Malindretos, J. and Indlekofer, K.M. and P{\"o}ttgens, Michael and F{\"o}rster, Arnold and L{\"u}th, Hans}, title = {A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits}, series = {IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6}, journal = {IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6}, isbn = {0018-9383}, pages = {1028 -- 1032}, year = {2001}, language = {en} } @article{KrafftFoersterHartetal.2001, author = {Krafft, B. and F{\"o}rster, Arnold and Hart, A. van der and Sch{\"a}pers, T.}, title = {Control of Aharonov-Bohm oscillations in a AlGaAs/GaAs ring by asymmetric and symmetric gate biasing}, series = {Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4}, journal = {Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4}, isbn = {1386-9477}, pages = {635 -- 641}, year = {2001}, language = {en} } @article{VitusevichFoersterLuethetal.2001, author = {Vitusevich, S. A. and F{\"o}rster, Arnold and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V. and Konakova, R. V. and Sheka, D. I.}, title = {Resonant spectroscopy of electric-field-induced superlattices}, series = {Journal of Applied Physics. 90 (2001), H. 6}, journal = {Journal of Applied Physics. 90 (2001), H. 6}, isbn = {1089-7550}, doi = {10.1063/1.1392956}, pages = {2857 -- 2861}, year = {2001}, language = {en} } @article{FoersterStockIndlekofer2002, author = {F{\"o}rster, Arnold and Stock, J. and Indlekofer, K. M.}, title = {Perspectives of resonant tunneling diodes}, series = {Recent research developments in materials science \& engineering/ 1,2}, journal = {Recent research developments in materials science \& engineering/ 1,2}, publisher = {Transworld Research Network}, address = {Trivandrum, India}, isbn = {81-7895-057-X}, pages = {527 -- 556}, year = {2002}, language = {en} } @article{VitusevichFoersterIndlekoferetal.2000, author = {Vitusevich, S. A. and F{\"o}rster, Arnold and Indlekofer, K.-M. and L{\"u}th, H. and Belyaev, A. E. and Glavin, B. A. and Konakova, R. V.}, title = {Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes}, series = {Physical Review . B. 61 (2000), H. 16}, journal = {Physical Review . B. 61 (2000), H. 16}, isbn = {1550-235X}, pages = {10898 -- 10904}, year = {2000}, language = {en} } @article{TillmannFoerster2000, author = {Tillmann, K. and F{\"o}rster, Arnold}, title = {Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)}, series = {Thin Solid Films. 368 (2000), H. 1}, journal = {Thin Solid Films. 368 (2000), H. 1}, isbn = {0040-6090}, pages = {93 -- 104}, year = {2000}, language = {en} } @article{VitusevichFoersterReetzetal.2000, author = {Vitusevich, S. A. and F{\"o}rster, Arnold and Reetz, W. and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V.}, title = {Spectral Responsivity of single-quantum-well photodetectors}, series = {Applied Physics Letters. 77 (2000), H. 1}, journal = {Applied Physics Letters. 77 (2000), H. 1}, isbn = {1077-3118}, pages = {16 -- 18}, year = {2000}, language = {en} } @article{MikulicsMarsoCamaraMayorgaetal.2005, author = {Mikulics, M. and Marso, M. and C{\´a}mara Mayorga, I. and Gusten, R. and Stancek, S. and Michael, E. A. and Schieder, R. and Wolter, M. and Buca, D. and F{\"o}rster, Arnold and Kordos, P. and L{\"u}th, H.}, title = {Photomixers fabricated on nitrogen-ion-implanted GaAs}, series = {Applied physics letters. 87 (2005)}, journal = {Applied physics letters. 87 (2005)}, pages = {041106-1 -- 041106-3}, year = {2005}, language = {en} } @inproceedings{FoersterStockMontanarietal.2006, author = {F{\"o}rster, Arnold and Stock, J{\"u}rgen and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans}, title = {Fabrication and characterisation of GaAs Gunn Diode Chips for applications at 77 GHz in automotive industry}, url = {http://nbn-resolving.de/urn:nbn:de:hbz:a96-opus-1462}, year = {2006}, abstract = {GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.}, subject = {Biosensor}, language = {en} }