@article{Foerster2000,
  author    = {F{\"o}rster, Arnold},
  title     = {Resonant tunneling diodes operating as modern quantum transport devices},
  series = {Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2},
  journal   = {Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2},
  publisher = {Allied Publ.},
  address   = {New Delhi [u.a.]},
  isbn      = {81-7023-998-2},
  pages     = {966 -- 966},
  year      = {2000},
  language  = {en}
}
@article{VitusevichFoersterReetzetal.2000,
  author    = {Vitusevich, S. A. and F{\"o}rster, Arnold and Reetz, W. and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V.},
  title     = {Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode},
  series = {Nanotechnology. 11 (2000), H. 4},
  journal   = {Nanotechnology. 11 (2000), H. 4},
  isbn      = {1361-6528},
  pages     = {305 -- 308},
  year      = {2000},
  language  = {en}
}
@article{SchmidtTonnesmannFoersteretal.2000,
  author    = {Schmidt, R. and Tonnesmann, A. and F{\"o}rster, Arnold and Grimm, M. and Kordos, P. and L{\"u}th, H.},
  title     = {Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer},
  series = {8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society},
  journal   = {8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society},
  publisher = {IEEE Operations Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-6550-X},
  pages     = {95 -- 98},
  year      = {2000},
  language  = {en}
}
@article{RosenauerOberstLitvinovetal.2000,
  author    = {Rosenauer, A. and Oberst, W. and Litvinov, D. and Gerthsen, D. and F{\"o}rster, Arnold and Schmidt, R.},
  title     = {Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy},
  series = {Physical Review B. 61 (2000), H. 12},
  journal   = {Physical Review B. 61 (2000), H. 12},
  isbn      = {1095-3795},
  pages     = {8276 -- 8288},
  year      = {2000},
  language  = {en}
}
@article{HoskensTolstikhinFoersteretal.2000,
  author    = {Hoskens, R. C. P. and Tolstikhin, V.I. and F{\"o}rster, Arnold and Roer, T.G. van de},
  title     = {Vertically integrated transistor-laser structure, take 2},
  series = {WOCSDICE 2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece.},
  journal   = {WOCSDICE 2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece.},
  publisher = {Univ. of Michigan},
  address   = {Ann Arbor, Mich.},
  isbn      = {0970311109},
  pages     = {Getr. Z{\"a}hlung [ca. 200 S.]},
  year      = {2000},
  language  = {en}
}
@article{DarmoSchaefferFoersteretal.2000,
  author    = {Darmo, J. and Sch{\"a}ffer, F. and F{\"o}rster, Arnold and Kordos, P.},
  title     = {Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range},
  series = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]},
  journal   = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {0780359399},
  pages     = {147 -- 150},
  year      = {2000},
  language  = {en}
}
@article{HodelOrzatiMarsoetal.2000,
  author    = {Hodel, U. and Orzati, A. and Marso, M. and Homann, O. and Fox, A. and Hart, A. v. d. and F{\"o}rster, Arnold and Kordos, P. and L{\"u}th, H.},
  title     = {A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver},
  series = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials},
  journal   = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials},
  publisher = {IEEE Service Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-6320-5},
  pages     = {466 -- 469},
  year      = {2000},
  language  = {en}
}
@article{HoskensRoerTolstikhinetal.2000,
  author    = {Hoskens, R.C.P. and Roer, T.G. van de and Tolstikhin, V.I. and F{\"o}rster, Arnold},
  title     = {Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation},
  series = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2},
  journal   = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2},
  publisher = {IEEE Service Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-5947-X},
  pages     = {444 -- 445},
  year      = {2000},
  language  = {en}
}
@article{VitusevichFoersterIndlekoferetal.2000,
  author    = {Vitusevich, S. A. and F{\"o}rster, Arnold and Indlekofer, K.-M. and L{\"u}th, H. and Belyaev, A. E. and Glavin, B. A. and Konakova, R. V.},
  title     = {Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes},
  series = {Physical Review . B. 61 (2000), H. 16},
  journal   = {Physical Review . B. 61 (2000), H. 16},
  isbn      = {1550-235X},
  pages     = {10898 -- 10904},
  year      = {2000},
  language  = {en}
}
@article{TillmannFoerster2000,
  author    = {Tillmann, K. and F{\"o}rster, Arnold},
  title     = {Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)},
  series = {Thin Solid Films. 368 (2000), H. 1},
  journal   = {Thin Solid Films. 368 (2000), H. 1},
  isbn      = {0040-6090},
  pages     = {93 -- 104},
  year      = {2000},
  language  = {en}
}
@article{VitusevichFoersterReetzetal.2000,
  author    = {Vitusevich, S. A. and F{\"o}rster, Arnold and Reetz, W. and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V.},
  title     = {Spectral Responsivity of single-quantum-well photodetectors},
  series = {Applied Physics Letters. 77 (2000), H. 1},
  journal   = {Applied Physics Letters. 77 (2000), H. 1},
  isbn      = {1077-3118},
  pages     = {16 -- 18},
  year      = {2000},
  language  = {en}
}