@article{SabitovaEbertLenzetal.2013,
  author    = {Sabitova, A. and Ebert, Ph. and Lenz, A. and Schaafhausen, S. and Ivanova, L. and D{\"a}hne, M. and Hoffmann, A. and Dunin-Borkowski, R. E. and F{\"o}rster, Arnold and Grandidier, B. and Eisele, H.},
  title     = {Intrinsic bandgap of cleaved ZnO(112¯0) surfaces},
  series = {Applied physics letters},
  volume    = {Vol. 102},
  journal   = {Applied physics letters},
  issn      = {1077-3118 (E-Journal); 0003-6951 (Print)},
  pages     = {021608},
  year      = {2013},
  language  = {en}
}
@article{BaeckerRaueSchusseretal.2012,
  author    = {B{\"a}cker, Matthias and Raue, Markus and Schusser, Sebastian and Jeitner, C. and Breuer, L. and Wagner, P. and Poghossian, Arshak and F{\"o}rster, Arnold and Mang, Thomas and Sch{\"o}ning, Michael Josef},
  title     = {Microfluidic chip with integrated microvalves based on temperature- and pH-responsive hydrogel thin films},
  series = {Physica Status Solidi (a)},
  volume    = {209},
  journal   = {Physica Status Solidi (a)},
  number    = {5},
  publisher = {Wiley-VCH},
  address   = {Weinheim},
  issn      = {1862-6319},
  doi       = {10.1002/pssa.201100763},
  pages     = {839 -- 845},
  year      = {2012},
  abstract  = {Two types of microvalves based on temperature-responsive poly(N-isopropylacrylamide) (PNIPAAm) and pH-responsive poly(sodium acrylate) (PSA) hydrogel films have been developed and tested. The PNIPAAm and PSA hydrogel films were prepared by means of in situ photopolymerization directly inside the fluidic channel of a microfluidic chip fabricated by combining Si and SU-8 technologies. The swelling/shrinking properties and height changes of the PNIPAAm and PSA films inside the fluidic channel were studied at temperatures of deionized water from 14 to 36 °C and different pH values (pH 3-12) of Titrisol buffer, respectively. Additionally, in separate experiments, the lower critical solution temperature (LCST) of the PNIPAAm hydrogel was investigated by means of a differential scanning calorimetry (DSC) and a surface plasmon resonance (SPR) method. Mass-flow measurements have shown the feasibility of the prepared hydrogel films to work as an on-chip integrated temperature- or pH-responsive microvalve capable to switch the flow channel on/off.},
  language  = {en}
}
@article{FoersterLepsaFreundt2007,
  author    = {F{\"o}rster, Arnold and Lepsa, M. I. and Freundt, D.},
  title     = {Hot electron injector Gunn diode for advanced driver assistance systems},
  series = {Applied physics A: materials science and processing. 87 (2007), H. 3},
  journal   = {Applied physics A: materials science and processing. 87 (2007), H. 3},
  isbn      = {0947-8396},
  pages     = {545 -- 558},
  year      = {2007},
  language  = {en}
}
@article{FoersterMikulicsWuetal.2006,
  author    = {F{\"o}rster, Arnold and Mikulics, M. and Wu, S. and Marso, M.},
  title     = {Ultrafast and Highly Sensitive Photodetectors With Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs. Mikulics, M.; Wu, S.; Marso, M.; Adam, R.; F{\"o}rster, A.; van der Hart, A.; Kordos, P.; L{\"u}th, H.; Sobolewski, R.},
  series = {IEEE Photonics Technology Letters. 18 (2006), H. 7},
  journal   = {IEEE Photonics Technology Letters. 18 (2006), H. 7},
  pages     = {820 -- 822},
  year      = {2006},
  language  = {en}
}
@inproceedings{FoersterStockMontanarietal.2006,
  author    = {F{\"o}rster, Arnold and Stock, J{\"u}rgen and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans},
  title     = {Fabrication and characterisation of GaAs Gunn Diode Chips for applications at 77 GHz in automotive industry},
  url       = {http://nbn-resolving.de/urn:nbn:de:hbz:a96-opus-1462},
  year      = {2006},
  abstract  = {GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.},
  subject      = {Biosensor},
  language  = {en}
}
@article{FoersterMontanariLepsaetal.2005,
  author    = {F{\"o}rster, Arnold and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans},
  title     = {High frequency investigation of graded gap injectors for GaAs Gunn diodes / Simone Montanari ; Arnold F{\"o}rster ; Mihail Ion Lepsa ; Hans L{\"u}th},
  series = {Solid-state electronics. 49 (2005), H. 2},
  journal   = {Solid-state electronics. 49 (2005), H. 2},
  isbn      = {0038-1101},
  pages     = {245 -- 250},
  year      = {2005},
  language  = {en}
}
@article{MikulicsMarsoCamaraMayorgaetal.2005,
  author    = {Mikulics, M. and Marso, M. and C{\´a}mara Mayorga, I. and Gusten, R. and Stancek, S. and Michael, E. A. and Schieder, R. and Wolter, M. and Buca, D. and F{\"o}rster, Arnold and Kordos, P. and L{\"u}th, H.},
  title     = {Photomixers fabricated on nitrogen-ion-implanted GaAs},
  series = {Applied physics letters. 87 (2005)},
  journal   = {Applied physics letters. 87 (2005)},
  pages     = {041106-1 -- 041106-3},
  year      = {2005},
  language  = {en}
}
@article{FoersterMarsoMikulicsetal.2005,
  author    = {F{\"o}rster, Arnold and Marso, M. and Mikulics, V. V. and Adam, R.},
  title     = {Ultrafast Phenomena in Freestanding LT-GaAs Devices. Marso, M.; Mikulics, V. V.; Adam, R.; Wu, S.; Zheng, X.; Camara, I.; Siebe, N. Y.; F{\"o}rster, A.; G{\"u}sten, R.; Kordos, P.; Sobolewski, R.},
  series = {Acta physica Polonica / A. 107 (2005), H. 1},
  journal   = {Acta physica Polonica / A. 107 (2005), H. 1},
  isbn      = {0587-4246},
  pages     = {109 -- 117},
  year      = {2005},
  language  = {en}
}
@article{FoersterWensorraIndlekoferetal.2005,
  author    = {F{\"o}rster, Arnold and Wensorra, J. and Indlekofer, K. M. and L{\"u}th, H.},
  title     = {Resonant tunneling in nanocolumns improved by quantum collimation. Wensorra, J.; Indlekofer, K. M.; F{\"o}rster, A.; L{\"u}th, H.},
  series = {Nano Letters. 5 (2005)},
  journal   = {Nano Letters. 5 (2005)},
  isbn      = {0587-4246},
  pages     = {2470 -- 2475},
  year      = {2005},
  language  = {en}
}
@article{MikulicsAdamKordosetal.2005,
  author    = {Mikulics, M. and Adam, R. and Kordos, P. and F{\"o}rster, Arnold and L{\"u}th, H. and Wu, S. and Zheng, X. and Sobolewski, R.},
  title     = {Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates},
  series = {IEEE photonics technology letters : IEEE PTL. 17 (2005), H. 8},
  journal   = {IEEE photonics technology letters : IEEE PTL. 17 (2005), H. 8},
  isbn      = {1041-1135},
  pages     = {1725 -- 1727},
  year      = {2005},
  language  = {en}
}
@article{MikulicsCamaraHardtetal.2004,
  author    = {Mikulics, M. and Camara, I. and Hardt, A. van der and Fox, A. and F{\"o}rster, Arnold and Gusten, R. and L{\"u}th, H. and Kordos, P.},
  title     = {Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs},
  series = {Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald},
  journal   = {Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald},
  publisher = {IEEE Operations Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-8335-7},
  pages     = {231 -- 234},
  year      = {2004},
  language  = {en}
}
@article{ZatkoDubeckyBohaceketal.2004,
  author    = {Zatko, B. and Dubeck{\´y}, F. and Bohacek, P. and Gombia, E. and Frigeri, P. and Mosca, R. and Franchi, S. and Huarn, J. and Nescas, V. and Sekacova, M. and F{\"o}rster, Arnold and Kordos, P.},
  title     = {On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs},
  series = {Nuclear instruments and methods in physics research, Section A. 531 (2004), H. 1-2},
  journal   = {Nuclear instruments and methods in physics research, Section A. 531 (2004), H. 1-2},
  isbn      = {0168-9002},
  pages     = {111 -- 120},
  year      = {2004},
  language  = {en}
}
@article{SrnanekGeurtsLentzeetal.2004,
  author    = {Srnanek, R. and Geurts, J. and Lentze, M. and Irmer, G. and Donoval, D. and Brdecka, P. and Kordos, P. and F{\"o}rster, Arnold and Sciana, B. and Radziewicz, D. and Tlaczala, M.},
  title     = {Study of d-doped GaAs layers by micro-Raman spectroscopy on bevelled samples},
  series = {Applied surface science . 230 (2004), H. 1 -4},
  journal   = {Applied surface science . 230 (2004), H. 1 -4},
  isbn      = {0169-4332},
  pages     = {379 -- 385},
  year      = {2004},
  language  = {en}
}
@article{Foerster2003,
  author    = {F{\"o}rster, Arnold},
  title     = {Layer Deposition I},
  series = {Fundamentals of nanoelectronics / Stefan Bl{\"u}gel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums J{\"u}lich : Materie und Material ; 14 ; 34)},
  journal   = {Fundamentals of nanoelectronics / Stefan Bl{\"u}gel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums J{\"u}lich : Materie und Material ; 14 ; 34)},
  publisher = {Forschungszentrum, Zentralbibliothek},
  address   = {J{\"u}lich},
  isbn      = {3-89336-319-X},
  pages     = {C2.1 -- C2.13},
  year      = {2003},
  language  = {en}
}
@article{FoersterKiesslichWackeretal.2003,
  author    = {F{\"o}rster, Arnold and Kiesslich, G. and Wacker, A. and Scholl, E.},
  title     = {Nonlinear charging effect of quantum dots in a p-i-n diode. Kiesslich, G.; Wacker, A.; Scholl, E.; Vitusevich, S.A.; Belyaev, A.E.; Danylyuk, S.V.; Forster, A.; Klein, N.; Henini, M.},
  series = {Physical Review B. 68 (2003)},
  journal   = {Physical Review B. 68 (2003)},
  isbn      = {1550-235X},
  year      = {2003},
  language  = {en}
}
@article{MaezawaFoerster2003,
  author    = {Maezawa, Koichi and F{\"o}rster, Arnold},
  title     = {Quantum transport devices based on resonant tunneling},
  series = {Nanoelectronics and information technology : advanced electronic materials and novel devices / Rainer Waser (ed.).},
  journal   = {Nanoelectronics and information technology : advanced electronic materials and novel devices / Rainer Waser (ed.).},
  publisher = {Wiley-VCH},
  address   = {Weinheim},
  isbn      = {3-527-40363-9},
  pages     = {407 -- 424},
  year      = {2003},
  language  = {en}
}
@article{FoersterStockIndlekofer2002,
  author    = {F{\"o}rster, Arnold and Stock, J. and Indlekofer, K. M.},
  title     = {Perspectives of resonant tunneling diodes},
  series = {Recent research developments in materials science \& engineering/ 1,2},
  journal   = {Recent research developments in materials science \& engineering/ 1,2},
  publisher = {Transworld Research Network},
  address   = {Trivandrum, India},
  isbn      = {81-7895-057-X},
  pages     = {527 -- 556},
  year      = {2002},
  language  = {en}
}
@article{FoersterIndlekoferLueth2002,
  author    = {F{\"o}rster, Arnold and Indlekofer, K.M. and L{\"u}th, H.},
  title     = {Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; F{\"o}rster, A.; L{\"u}th, H.},
  series = {Physica B: Condensed Matter. 314 (2002), H. 1-4},
  journal   = {Physica B: Condensed Matter. 314 (2002), H. 1-4},
  isbn      = {0921-4526},
  pages     = {499 -- 502},
  year      = {2002},
  language  = {en}
}
@article{FoersterBelyaevVitusevichetal.2002,
  author    = {F{\"o}rster, Arnold and Belyaev, A. E. and Vitusevich, S.A. and Eaves, L.},
  title     = {Photoresponse spectra in p-i-n diodes containing quantum dots. Belyaev, A.E.; Vitusevich, S.A.; Eaves, L.; Main, P.C.; Henini, M.; F{\"o}rster, A.; Reetz, W.; Danylyuk, S.V.},
  series = {Nanotechnology. 13 (2002), H. 1},
  journal   = {Nanotechnology. 13 (2002), H. 1},
  pages     = {94 -- 96},
  year      = {2002},
  language  = {en}
}
@article{FoersterKicinCambeletal.2002,
  author    = {F{\"o}rster, Arnold and Kicin, S and Cambel, V. and Kuliffayova, M.},
  title     = {Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. Kicin, S.; Cambel, V.; Kuliffayova, M.; Gregusova, D.; Kovacova, E.; Novak, J.; Kostic, I.; Forster, A.},
  series = {Journal of Applied Physics. 91 (2002), H. 2},
  journal   = {Journal of Applied Physics. 91 (2002), H. 2},
  isbn      = {1089-7550},
  pages     = {878 -- 880},
  year      = {2002},
  language  = {en}
}