@article{FoersterBertuccioPullia1997,
  author    = {F{\"o}rster, Arnold and Bertuccio, G. and Pullia, A.},
  title     = {Pixel X-ray detectors in epitaxial gallium arsenide withhigh-energy resolution capabilities (Fano factor experimentaldetermination) / G. Bertuccio ; A. Pullia ; J. Lauter ; A. F{\"o}rster ...},
  series = {IEEE transactions on nuclear science. 44 (1997), H. 1},
  journal   = {IEEE transactions on nuclear science. 44 (1997), H. 1},
  isbn      = {0018-9499},
  pages     = {1 -- 5},
  year      = {1997},
  language  = {en}
}
@article{FoersterBetkoKordosetal.1994,
  author    = {F{\"o}rster, Arnold and Betko, J. and Kordos, P. and Kuklovsky, S.},
  title     = {Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. F{\"o}rster ...},
  series = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3},
  journal   = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3},
  isbn      = {0921-5107},
  pages     = {147 -- 150},
  year      = {1994},
  language  = {en}
}
@article{FoersterBetkoMorvicetal.1999,
  author    = {F{\"o}rster, Arnold and Betko, J. and Morvic, M. and Novak, J.},
  title     = {Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; F{\"o}rster, A.; Kordos, P.},
  series = {Journal of Applied Physics. 86 (1999), H. 11},
  journal   = {Journal of Applied Physics. 86 (1999), H. 11},
  isbn      = {1089-7550},
  pages     = {6243 -- 6248},
  year      = {1999},
  language  = {en}
}
@article{FoersterBetkoMorvicetal.1996,
  author    = {F{\"o}rster, Arnold and Betko, J. and Morvic, M. and Novak, J.},
  title     = {Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Nov{\´a}k ... A. F{\"o}rster ...},
  series = {Applied physics letters. 69 (1996), H. 17},
  journal   = {Applied physics letters. 69 (1996), H. 17},
  isbn      = {0003-6951},
  pages     = {2563 -- 2565},
  year      = {1996},
  language  = {en}
}
@article{FoersterBruggerMeiners1991,
  author    = {F{\"o}rster, Arnold and Brugger, H. and Meiners, U.},
  title     = {High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. W{\"o}lk ... A. F{\"o}rster ...},
  series = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman},
  journal   = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman},
  publisher = {Inst. of Electrical and Electronics Engineers},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-0491-8},
  pages     = {39 -- ff.},
  year      = {1991},
  language  = {en}
}
@article{FoersterBruggerMeinersetal.1994,
  author    = {F{\"o}rster, Arnold and Brugger, H. and Meiners, U. and Diniz, R.},
  title     = {Hydrostatic pressure sensors based on solid state tunneling devices / H. Brugger; U. Meiners ; R. Diniz ... A. F{\"o}rster ...},
  series = {Solid state electronics. 37 (1994), H. 4-6},
  journal   = {Solid state electronics. 37 (1994), H. 4-6},
  isbn      = {0038-1101},
  pages     = {801 -- 804},
  year      = {1994},
  language  = {en}
}
@article{FoersterCambelKicinetal.2002,
  author    = {F{\"o}rster, Arnold and Cambel, V. and Kicin, S. and Kuliffayov{\´a}, M.},
  title     = {Preparation of patterned GaAs structures for MEMS and MOEMS. Cambel, V.; Kicin, S.; Kuliffayov{\´a}, M.; Kov{\´a}cov{\´a}, E.; Nov{\´a}k, J.; Kostic, I.; F{\"o}rster, A.},
  series = {Materials Science and Engineering: C. 19 (2002), H. 2},
  journal   = {Materials Science and Engineering: C. 19 (2002), H. 2},
  isbn      = {0928-4931},
  pages     = {161 -- 165},
  year      = {2002},
  language  = {en}
}
@article{FoersterDarmoDubeckyetal.1998,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Dubecky, F. and Kordos, P.},
  title     = {Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; F{\"o}rster, A.},
  series = {Applied Physics Letters. 72 (1998), H. 5},
  journal   = {Applied Physics Letters. 72 (1998), H. 5},
  isbn      = {1077-3118},
  pages     = {590 -- 592},
  year      = {1998},
  language  = {en}
}
@article{FoersterDarmoDubeckyetal.1996,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.},
  title     = {Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. F{\"o}rster},
  series = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]},
  journal   = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]},
  address   = {Piscataway, NJ [u.a.]},
  isbn      = {0-7803-3095-1},
  pages     = {67 -- ff.},
  year      = {1996},
  language  = {en}
}
@article{FoersterDarmoDubeckyetal.1994,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.},
  title     = {Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubeck{\´y} ; P. Kordos ; A. F{\"o}rster ...},
  series = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3},
  journal   = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3},
  isbn      = {0921-5107},
  pages     = {393 -- 396},
  year      = {1994},
  language  = {en}
}