@article{FoersterVitusevichBelyaev1999, author = {F{\"o}rster, Arnold and Vitusevich, S. A. and Belyaev, A. E.}, title = {Optically controlled 2D tunneling in GaAs delta-doped p-n junction / S. A. Vitusevich ; A. F{\"o}rster ; A. E. Belyaev ...}, series = {Semiconductor Physics, Quantum Electronics \& Optoelectronics (SQO) : International Scientific Journal. 2 (1999), H. 1}, journal = {Semiconductor Physics, Quantum Electronics \& Optoelectronics (SQO) : International Scientific Journal. 2 (1999), H. 1}, isbn = {1605-6582}, pages = {7 -- 10}, year = {1999}, language = {en} } @article{FoersterVitusevichBelyaev1999, author = {F{\"o}rster, Arnold and Vitusevich, S. A. and Belyaev, B. A.}, title = {Intrinsic bistability effect in delta doped tunneling diodes / S. A. Vitusevich ; A. F{\"o}rster ; B. A. Belyaev ...}, series = {Proceedings of the XXVIII International School on Physics of Semiconducting Compounds : Jaszowiec, Poland, June 6 - 11, 1999 / Polish Academy of Sciences, Institute of Physics. Ed. of the proceedings Wojciech Szuszkiewicz}, journal = {Proceedings of the XXVIII International School on Physics of Semiconducting Compounds : Jaszowiec, Poland, June 6 - 11, 1999 / Polish Academy of Sciences, Institute of Physics. Ed. of the proceedings Wojciech Szuszkiewicz}, address = {Warsaw}, pages = {S. 511 - 688 : Ill., graph. Darst.}, year = {1999}, language = {en} } @article{FoersterMarsoGersdorfetal.1999, author = {F{\"o}rster, Arnold and Marso, M. and Gersdorf, P. and Fox, A.}, title = {An InAlAs-InGaAs OPFET with responsivity above 200 A/W at 1.3-\&\#956;m wavelength. Marso, M.; Gersdorf, P.; Fox, A.; Hodel, U.; Lambertini, R.; Kordos, P.}, series = {IEEE Photonics Technology Letters. 11 (1999), H. 1}, journal = {IEEE Photonics Technology Letters. 11 (1999), H. 1}, isbn = {1041-1135}, pages = {117 -- 119}, year = {1999}, language = {en} } @article{RosenauerOberstLitvinovetal.2000, author = {Rosenauer, A. and Oberst, W. and Litvinov, D. and Gerthsen, D. and F{\"o}rster, Arnold and Schmidt, R.}, title = {Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy}, series = {Physical Review B. 61 (2000), H. 12}, journal = {Physical Review B. 61 (2000), H. 12}, isbn = {1095-3795}, pages = {8276 -- 8288}, year = {2000}, language = {en} } @article{HoskensTolstikhinFoersteretal.2000, author = {Hoskens, R. C. P. and Tolstikhin, V.I. and F{\"o}rster, Arnold and Roer, T.G. van de}, title = {Vertically integrated transistor-laser structure, take 2}, series = {WOCSDICE 2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece.}, journal = {WOCSDICE 2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece.}, publisher = {Univ. of Michigan}, address = {Ann Arbor, Mich.}, isbn = {0970311109}, pages = {Getr. Z{\"a}hlung [ca. 200 S.]}, year = {2000}, language = {en} } @article{DarmoSchaefferFoersteretal.2000, author = {Darmo, J. and Sch{\"a}ffer, F. and F{\"o}rster, Arnold and Kordos, P.}, title = {Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range}, series = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]}, journal = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {0780359399}, pages = {147 -- 150}, year = {2000}, language = {en} } @article{FoersterGriebelIndlekoferetal.1999, author = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, K.M. and L{\"u}th, H.}, title = {Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; F{\"o}rster, A.; L{\"u}th, H.}, series = {Journal of Physics D: Applied Physics. 32 (1999), H. 14}, journal = {Journal of Physics D: Applied Physics. 32 (1999), H. 14}, isbn = {1361-6463}, pages = {1729 -- 1733}, year = {1999}, language = {en} } @article{HodelOrzatiMarsoetal.2000, author = {Hodel, U. and Orzati, A. and Marso, M. and Homann, O. and Fox, A. and Hart, A. v. d. and F{\"o}rster, Arnold and Kordos, P. and L{\"u}th, H.}, title = {A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver}, series = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials}, journal = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-6320-5}, pages = {466 -- 469}, year = {2000}, language = {en} } @article{HoskensRoerTolstikhinetal.2000, author = {Hoskens, R.C.P. and Roer, T.G. van de and Tolstikhin, V.I. and F{\"o}rster, Arnold}, title = {Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation}, series = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2}, journal = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-5947-X}, pages = {444 -- 445}, year = {2000}, language = {en} } @article{StockMalindretosIndlekoferetal.2001, author = {Stock, J. and Malindretos, J. and Indlekofer, K.M. and P{\"o}ttgens, Michael and F{\"o}rster, Arnold and L{\"u}th, Hans}, title = {A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits}, series = {IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6}, journal = {IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6}, isbn = {0018-9383}, pages = {1028 -- 1032}, year = {2001}, language = {en} }