@article{FoersterLachenmannFridrichetal.1999,
  author    = {F{\"o}rster, Arnold and Lachenmann, S. G. and Fridrich, I. and Sch{\"a}pers, T.},
  title     = {Supression of the surface-inversion layer of p-type InAs. Lachenmann, S. G.; Fridrich, I.; F{\"o}rster, A.; Sch{\"a}pers, Th.},
  series = {Journal of Applied Physics. 85 (1999), H. 12},
  journal   = {Journal of Applied Physics. 85 (1999), H. 12},
  isbn      = {1089-7550},
  pages     = {8242 -- 8246},
  year      = {1999},
  language  = {en}
}
@article{FoersterKordosRuders1997,
  author    = {F{\"o}rster, Arnold and Kordos, P. and Ruders, F.},
  title     = {Properties of LT MBE GaAs for photomixing up to THz frequencies / P. Kordos ; F. Ruders ; M. Marso ; A. F{\"o}rster},
  series = {Proceedings : 8 - 11 December 1996, Australian National University, Canberra, Australia / ed.: C. Jagadish},
  journal   = {Proceedings : 8 - 11 December 1996, Australian National University, Canberra, Australia / ed.: C. Jagadish},
  publisher = {IEEE Service Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-3374-8},
  pages     = {71 -- ff.},
  year      = {1997},
  language  = {en}
}
@article{FoersterKordosMarsoetal.1998,
  author    = {F{\"o}rster, Arnold and Kordos, P. and Marso, M. and R{\"u}ders, F.},
  title     = {550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs. Kordos, P., F{\"o}rster, A.; Marso, M.; R{\"u}ders, F.},
  series = {Electronics Letters. 34 (1998), H. 1},
  journal   = {Electronics Letters. 34 (1998), H. 1},
  isbn      = {1350-911X},
  pages     = {119 -- 120},
  year      = {1998},
  language  = {en}
}
@article{FoersterKordosMarso1997,
  author    = {F{\"o}rster, Arnold and Kordos, P. and Marso, M.},
  title     = {Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs / P. Kordos ; M. Marso, ; A. F{\"o}rster ...},
  series = {Applied physics letters. 71 (1997), H. 8},
  journal   = {Applied physics letters. 71 (1997), H. 8},
  isbn      = {0003-6951},
  pages     = {1118 -- 1120},
  year      = {1997},
  language  = {en}
}
@article{FoersterKordosBetko1995,
  author    = {F{\"o}rster, Arnold and Kordos, P. and Betko, J.},
  title     = {Semi-insulating GaAs layers grown by molecular-beam epitaxy / P. Kordos ; A. F{\"o}rster ; J. Betko ...},
  series = {Applied physics letters. 67 (1995), H. 7},
  journal   = {Applied physics letters. 67 (1995), H. 7},
  isbn      = {0003-6951},
  pages     = {983 -- 985},
  year      = {1995},
  language  = {en}
}
@article{FoersterKordosBetko1995,
  author    = {F{\"o}rster, Arnold and Kordos, P. and Betko, J.},
  title     = {Electrical and structural characterization of MBE GaAs grown at temperatures between 200 and 600 °C / P. Kordos ; J. Betko; A. F{\"o}rster ...},
  series = {Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)},
  journal   = {Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)},
  publisher = {Institute of Physics},
  address   = {Bristol [u.a.]},
  isbn      = {0-7503-0226-7},
  pages     = {295 -- ff.},
  year      = {1995},
  language  = {en}
}
@article{FoersterKohleickLueth1993,
  author    = {F{\"o}rster, Arnold and Kohleick, R. and L{\"u}th, H.},
  title     = {Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure / R. Kohleick ; A. F{\"o}rster ; H. L{\"u}th},
  series = {Physical Review B . 48 (1993), H. 20},
  journal   = {Physical Review B . 48 (1993), H. 20},
  isbn      = {0163-1829},
  pages     = {15138 -- 15143},
  year      = {1993},
  language  = {en}
}
@article{FoersterKlemradtFunkeetal.1996,
  author    = {F{\"o}rster, Arnold and Klemradt, U. and Funke, M. and Fromm, M},
  title     = {Growth-induced interface roughness of GaAs/AlAs-layers studied by X-ray scattering under grazing angles / U. Klemradt ; M. Funke ; M. Fromm ... A F{\"o}rster},
  series = {Physica B: condensed matter. 221 (1996), H. 1-4},
  journal   = {Physica B: condensed matter. 221 (1996), H. 1-4},
  isbn      = {0921-4526},
  pages     = {27 -- 33},
  year      = {1996},
  language  = {en}
}
@article{FoersterKiesslichWackeretal.2003,
  author    = {F{\"o}rster, Arnold and Kiesslich, G. and Wacker, A. and Scholl, E.},
  title     = {Nonlinear charging effect of quantum dots in a p-i-n diode. Kiesslich, G.; Wacker, A.; Scholl, E.; Vitusevich, S.A.; Belyaev, A.E.; Danylyuk, S.V.; Forster, A.; Klein, N.; Henini, M.},
  series = {Physical Review B. 68 (2003)},
  journal   = {Physical Review B. 68 (2003)},
  isbn      = {1550-235X},
  year      = {2003},
  language  = {en}
}
@article{FoersterKicinCambeletal.2002,
  author    = {F{\"o}rster, Arnold and Kicin, S and Cambel, V. and Kuliffayova, M.},
  title     = {Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. Kicin, S.; Cambel, V.; Kuliffayova, M.; Gregusova, D.; Kovacova, E.; Novak, J.; Kostic, I.; Forster, A.},
  series = {Journal of Applied Physics. 91 (2002), H. 2},
  journal   = {Journal of Applied Physics. 91 (2002), H. 2},
  isbn      = {1089-7550},
  pages     = {878 -- 880},
  year      = {2002},
  language  = {en}
}