@article{FoersterLachenmannFriedrichetal.1999, author = {F{\"o}rster, Arnold and Lachenmann, S. G. and Friedrich, I. and Uhlisch, D.}, title = {Superconductor/semiconductor step junctions: the basic element for hybrid three terminal devices. Lachenmann, S. G., F{\"o}rster, A.; Friedrich, I.; Uhlisch, D.; Sch{\"a}pers, Th.; Kastalsky, A.; Golubov, A. A.}, series = {Applied Superconductivity. 6 (1999), H. 10-12}, journal = {Applied Superconductivity. 6 (1999), H. 10-12}, isbn = {0964-1807}, pages = {681 -- 688}, year = {1999}, language = {en} } @article{FoersterLachenmannFriedrich1997, author = {F{\"o}rster, Arnold and Lachenmann, S. G. and Friedrich, I.}, title = {Charge transport in superconductor/semiconductor/normal-conductor step junctions / S. G. Lachenmann ; I. Friedrich ; A. F{\"o}rster ...}, series = {Physical review / B, Condensed matter and materials physics. 56 (1997), H. 21}, journal = {Physical review / B, Condensed matter and materials physics. 56 (1997), H. 21}, isbn = {1095-3795}, pages = {14108 -- 14115}, year = {1997}, language = {en} } @article{FoersterLachenmannFridrichetal.1999, author = {F{\"o}rster, Arnold and Lachenmann, S. G. and Fridrich, I. and Sch{\"a}pers, T.}, title = {Supression of the surface-inversion layer of p-type InAs. Lachenmann, S. G.; Fridrich, I.; F{\"o}rster, A.; Sch{\"a}pers, Th.}, series = {Journal of Applied Physics. 85 (1999), H. 12}, journal = {Journal of Applied Physics. 85 (1999), H. 12}, isbn = {1089-7550}, pages = {8242 -- 8246}, year = {1999}, language = {en} } @article{FoersterKordosRuders1997, author = {F{\"o}rster, Arnold and Kordos, P. and Ruders, F.}, title = {Properties of LT MBE GaAs for photomixing up to THz frequencies / P. Kordos ; F. Ruders ; M. Marso ; A. F{\"o}rster}, series = {Proceedings : 8 - 11 December 1996, Australian National University, Canberra, Australia / ed.: C. Jagadish}, journal = {Proceedings : 8 - 11 December 1996, Australian National University, Canberra, Australia / ed.: C. Jagadish}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-3374-8}, pages = {71 -- ff.}, year = {1997}, language = {en} } @article{FoersterKordosMarsoetal.1998, author = {F{\"o}rster, Arnold and Kordos, P. and Marso, M. and R{\"u}ders, F.}, title = {550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs. Kordos, P., F{\"o}rster, A.; Marso, M.; R{\"u}ders, F.}, series = {Electronics Letters. 34 (1998), H. 1}, journal = {Electronics Letters. 34 (1998), H. 1}, isbn = {1350-911X}, pages = {119 -- 120}, year = {1998}, language = {en} } @article{FoersterKordosMarso1997, author = {F{\"o}rster, Arnold and Kordos, P. and Marso, M.}, title = {Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs / P. Kordos ; M. Marso, ; A. F{\"o}rster ...}, series = {Applied physics letters. 71 (1997), H. 8}, journal = {Applied physics letters. 71 (1997), H. 8}, isbn = {0003-6951}, pages = {1118 -- 1120}, year = {1997}, language = {en} } @article{FoersterKordosBetko1995, author = {F{\"o}rster, Arnold and Kordos, P. and Betko, J.}, title = {Semi-insulating GaAs layers grown by molecular-beam epitaxy / P. Kordos ; A. F{\"o}rster ; J. Betko ...}, series = {Applied physics letters. 67 (1995), H. 7}, journal = {Applied physics letters. 67 (1995), H. 7}, isbn = {0003-6951}, pages = {983 -- 985}, year = {1995}, language = {en} } @article{FoersterKordosBetko1995, author = {F{\"o}rster, Arnold and Kordos, P. and Betko, J.}, title = {Electrical and structural characterization of MBE GaAs grown at temperatures between 200 and 600 °C / P. Kordos ; J. Betko; A. F{\"o}rster ...}, series = {Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)}, journal = {Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)}, publisher = {Institute of Physics}, address = {Bristol [u.a.]}, isbn = {0-7503-0226-7}, pages = {295 -- ff.}, year = {1995}, language = {en} } @article{FoersterKohleickLueth1993, author = {F{\"o}rster, Arnold and Kohleick, R. and L{\"u}th, H.}, title = {Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure / R. Kohleick ; A. F{\"o}rster ; H. L{\"u}th}, series = {Physical Review B . 48 (1993), H. 20}, journal = {Physical Review B . 48 (1993), H. 20}, isbn = {0163-1829}, pages = {15138 -- 15143}, year = {1993}, language = {en} } @article{FoersterKlemradtFunkeetal.1996, author = {F{\"o}rster, Arnold and Klemradt, U. and Funke, M. and Fromm, M}, title = {Growth-induced interface roughness of GaAs/AlAs-layers studied by X-ray scattering under grazing angles / U. Klemradt ; M. Funke ; M. Fromm ... A F{\"o}rster}, series = {Physica B: condensed matter. 221 (1996), H. 1-4}, journal = {Physica B: condensed matter. 221 (1996), H. 1-4}, isbn = {0921-4526}, pages = {27 -- 33}, year = {1996}, language = {en} } @article{FoersterKiesslichWackeretal.2003, author = {F{\"o}rster, Arnold and Kiesslich, G. and Wacker, A. and Scholl, E.}, title = {Nonlinear charging effect of quantum dots in a p-i-n diode. Kiesslich, G.; Wacker, A.; Scholl, E.; Vitusevich, S.A.; Belyaev, A.E.; Danylyuk, S.V.; Forster, A.; Klein, N.; Henini, M.}, series = {Physical Review B. 68 (2003)}, journal = {Physical Review B. 68 (2003)}, isbn = {1550-235X}, year = {2003}, language = {en} } @article{FoersterKicinCambeletal.2002, author = {F{\"o}rster, Arnold and Kicin, S and Cambel, V. and Kuliffayova, M.}, title = {Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. Kicin, S.; Cambel, V.; Kuliffayova, M.; Gregusova, D.; Kovacova, E.; Novak, J.; Kostic, I.; Forster, A.}, series = {Journal of Applied Physics. 91 (2002), H. 2}, journal = {Journal of Applied Physics. 91 (2002), H. 2}, isbn = {1089-7550}, pages = {878 -- 880}, year = {2002}, language = {en} } @article{FoersterJanssenRoer1999, author = {F{\"o}rster, Arnold and Janssen, G. and Roer, T. G. van de}, title = {Logic Circuits with reduced complexity based on devices with higher functionality / G. Janssen ; T. G. van de Roer ; W. Prost ... A. F{\"o}rster}, series = {Proceedings / STW/SAFE 2nd Annual Workshop on Semiconductor Advances for Future Electronics, Safe '99 - ProRISC/IEEE 10th Annual Workshop on Circuits, Systems and Signal Processing, ProRISC 99 : November 24 - 26, 1999, Mierlo, The Netherlands [Elektronische Ressource]}, journal = {Proceedings / STW/SAFE 2nd Annual Workshop on Semiconductor Advances for Future Electronics, Safe '99 - ProRISC/IEEE 10th Annual Workshop on Circuits, Systems and Signal Processing, ProRISC 99 : November 24 - 26, 1999, Mierlo, The Netherlands [Elektronische Ressource]}, publisher = {Technology Foundation, STW}, address = {Utrecht}, pages = {219}, year = {1999}, language = {en} } @article{FoersterIndlekoferLueth2002, author = {F{\"o}rster, Arnold and Indlekofer, K.M. and L{\"u}th, H.}, title = {Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; F{\"o}rster, A.; L{\"u}th, H.}, series = {Physica B: Condensed Matter. 314 (2002), H. 1-4}, journal = {Physica B: Condensed Matter. 314 (2002), H. 1-4}, isbn = {0921-4526}, pages = {499 -- 502}, year = {2002}, language = {en} } @article{FoersterIndlekoferLange1996, author = {F{\"o}rster, Arnold and Indlekofer, K. and Lange, J.}, title = {Theory of single-electron tunneling in resonant-tunneling diodes including scattering and multiple subbands at finite temperature / K. M. Indlekofer ; J. Lange ; A. F{\"o}rster ...}, series = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 11}, journal = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 11}, isbn = {1095-3795}, pages = {7392 -- 7402}, year = {1996}, language = {en} } @article{FoersterHuVerghese1996, author = {F{\"o}rster, Arnold and Hu, Quing and Verghese, S.}, title = {High-frequency (f ~ 1 THz) studies of quantum-effect devices / Qing Hu ; S. Verghese ; R. A. Wyss ... A. F{\"o}rster}, series = {Semiconductor science and technology. 11 (1996), H. 12}, journal = {Semiconductor science and technology. 11 (1996), H. 12}, isbn = {1361-6641}, pages = {1888 -- 1894}, year = {1996}, language = {en} } @article{FoersterHaukeJakumeitetal.1998, author = {F{\"o}rster, Arnold and Hauke, M. and Jakumeit, J. and Krafft, B.}, title = {DX Centers in Al0.3Ga0.7As/GaAs Analyzed by Point Contact Measurements. Hauke, M.; Jakumeit, J.; Krafft, B.; Nimtz, G.; F{\"o}rster, A.; L{\"u}th, H.}, series = {Journal of Applied Physics. 84 (1998), H. 4}, journal = {Journal of Applied Physics. 84 (1998), H. 4}, isbn = {1089-7550}, pages = {2034 -- 2039}, year = {1998}, language = {en} } @article{FoersterHartmannDiekeretal.1998, author = {F{\"o}rster, Arnold and Hartmann, A. and Dieker, Ch. and Hollfelder, M.}, title = {Spontaneous formation of tilted AlGaAS/GaAs superlattice during AlGaAs growth. Hartmann, A.; Dieker, Ch.; Hollfelder, M.; Hardtdegen, H.; F{\"o}rster, A.; L{\"u}th, H.}, series = {Applied Surface Science. 123-124 (1998)}, journal = {Applied Surface Science. 123-124 (1998)}, isbn = {0169-4332}, pages = {704 -- 709}, year = {1998}, language = {en} } @article{FoersterHardtdegenUngermanns1995, author = {F{\"o}rster, Arnold and Hardtdegen, Hilde and Ungermanns, C.}, title = {Comparative investigation of electrical and optical characteristics of AlxGa1-xAs/GaAs structures deposited by LP-MOVPE and MBE / H. Hardtdegen ; M. Hollfelder ; C. Ungermanns ... A. F{\"o}rster ...}, series = {Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)}, journal = {Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)}, publisher = {Institute of Physics}, address = {Bristol [u.a.]}, isbn = {0-7503-0226-7}, pages = {81 -- ff.}, year = {1995}, language = {en} } @article{FoersterGriebelIndlekoferetal.1998, author = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, M. and L{\"u}th, H.}, title = {Transport through a buried double barrier single electron transistor at low temperatures}, series = {Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4}, journal = {Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4}, isbn = {1386-9477}, pages = {502 -- 506}, year = {1998}, language = {en} } @article{FoersterGriebelIndlekoferetal.1999, author = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, K.M. and L{\"u}th, H.}, title = {Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; F{\"o}rster, A.; L{\"u}th, H.}, series = {Journal of Physics D: Applied Physics. 32 (1999), H. 14}, journal = {Journal of Physics D: Applied Physics. 32 (1999), H. 14}, isbn = {1361-6463}, pages = {1729 -- 1733}, year = {1999}, language = {en} } @article{FoersterGriebelIndlekoferetal.1998, author = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, K. M. and L{\"u}th, H.}, title = {Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; F{\"o}rster, A.; L{\"u}th, H.}, series = {Journal of Applied Physics. 84 (1998), H. 12}, journal = {Journal of Applied Physics. 84 (1998), H. 12}, isbn = {1089-7550}, pages = {6719 -- 6724}, year = {1998}, language = {en} } @article{FoersterDoehlerHeber1998, author = {F{\"o}rster, Arnold and D{\"o}hler, G. H and Heber, J.}, title = {Hot electrons in n-i-p.i-based devices / G. H. D{\"o}hler ; J. Heber ... A. F{\"o}rster ...}, series = {Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)}, journal = {Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)}, publisher = {Clarendon Press}, address = {Oxford}, isbn = {0-19-850058-0}, pages = {478 -- 504}, year = {1998}, language = {en} } @article{FoersterDubeckyDarmo1994, author = {F{\"o}rster, Arnold and Dubecky, F.. and Darmo, J.}, title = {Investigation of deep-level states in bulk and low temperature MBE semiinsulating GaAs by admittance transient spectroscopy / F. Dubecky ; J. Darmo ; M. Darviras ; A. F{\"o}rster ...}, series = {Semi-insulating III-V materials, Ixtapa, Mexico 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21 - 24 April 1992 / ed. by C. J. Miner ...}, journal = {Semi-insulating III-V materials, Ixtapa, Mexico 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21 - 24 April 1992 / ed. by C. J. Miner ...}, publisher = {Inst. of Physics Publ.}, address = {Bristol [u.a.]}, isbn = {0-7503-0242-9}, pages = {265 -- 272}, year = {1994}, language = {en} } @article{FoersterDiekerGerthsen1993, author = {F{\"o}rster, Arnold and Dieker, C. and Gerthsen, D.}, title = {Microstructure of the AlAs/GaAs and AlAs/InGaAs resonant tunneling diodes and its correlation with the electrical properties / C. Dieker ; D. Gerthsen ; A. F{\"o}rster ...}, series = {Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134)}, journal = {Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134)}, publisher = {Institute of Physics}, address = {Bristol [u.a.]}, isbn = {0-7503-0290-9}, pages = {253 -- ff.}, year = {1993}, language = {en} } @article{FoersterDekorsyKim1996, author = {F{\"o}rster, Arnold and Dekorsy, T. and Kim, A. T. M.}, title = {Subpicosecond coherent carrier-phonon dynamics in semiconductor heterostructures / T. Dekorsy ; A. M. T. Kim ; G. C. Cho ... A. F{\"o}rster}, series = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 3}, journal = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 3}, isbn = {1095-3795}, pages = {1531 -- 1538}, year = {1996}, language = {en} } @article{FoersterDarmoSchaferetal.2002, author = {F{\"o}rster, Arnold and Darmo, J. and Schafer, F. and Kordos, P.}, title = {Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R}, series = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza}, journal = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-7276-X}, pages = {87 -- 90}, year = {2002}, language = {en} } @article{FoersterDarmoDubeckyetal.1996, author = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.}, title = {Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. F{\"o}rster}, series = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]}, journal = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]}, address = {Piscataway, NJ [u.a.]}, isbn = {0-7803-3095-1}, pages = {67 -- ff.}, year = {1996}, language = {en} } @article{FoersterDarmoDubeckyetal.1994, author = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.}, title = {Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubeck{\´y} ; P. Kordos ; A. F{\"o}rster ...}, series = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, journal = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, isbn = {0921-5107}, pages = {393 -- 396}, year = {1994}, language = {en} } @article{FoersterDarmoDubeckyetal.1998, author = {F{\"o}rster, Arnold and Darmo, J. and Dubecky, F. and Kordos, P.}, title = {Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; F{\"o}rster, A.}, series = {Applied Physics Letters. 72 (1998), H. 5}, journal = {Applied Physics Letters. 72 (1998), H. 5}, isbn = {1077-3118}, pages = {590 -- 592}, year = {1998}, language = {en} } @article{FoersterCambelKicinetal.2002, author = {F{\"o}rster, Arnold and Cambel, V. and Kicin, S. and Kuliffayov{\´a}, M.}, title = {Preparation of patterned GaAs structures for MEMS and MOEMS. Cambel, V.; Kicin, S.; Kuliffayov{\´a}, M.; Kov{\´a}cov{\´a}, E.; Nov{\´a}k, J.; Kostic, I.; F{\"o}rster, A.}, series = {Materials Science and Engineering: C. 19 (2002), H. 2}, journal = {Materials Science and Engineering: C. 19 (2002), H. 2}, isbn = {0928-4931}, pages = {161 -- 165}, year = {2002}, language = {en} } @article{FoersterBruggerMeinersetal.1994, author = {F{\"o}rster, Arnold and Brugger, H. and Meiners, U. and Diniz, R.}, title = {Hydrostatic pressure sensors based on solid state tunneling devices / H. Brugger; U. Meiners ; R. Diniz ... A. F{\"o}rster ...}, series = {Solid state electronics. 37 (1994), H. 4-6}, journal = {Solid state electronics. 37 (1994), H. 4-6}, isbn = {0038-1101}, pages = {801 -- 804}, year = {1994}, language = {en} } @article{FoersterBruggerMeiners1991, author = {F{\"o}rster, Arnold and Brugger, H. and Meiners, U.}, title = {High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. W{\"o}lk ... A. F{\"o}rster ...}, series = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman}, journal = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman}, publisher = {Inst. of Electrical and Electronics Engineers}, address = {Piscataway, NJ}, isbn = {0-7803-0491-8}, pages = {39 -- ff.}, year = {1991}, language = {en} } @article{FoersterBetkoMorvicetal.1999, author = {F{\"o}rster, Arnold and Betko, J. and Morvic, M. and Novak, J.}, title = {Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; F{\"o}rster, A.; Kordos, P.}, series = {Journal of Applied Physics. 86 (1999), H. 11}, journal = {Journal of Applied Physics. 86 (1999), H. 11}, isbn = {1089-7550}, pages = {6243 -- 6248}, year = {1999}, language = {en} } @article{FoersterBetkoMorvicetal.1996, author = {F{\"o}rster, Arnold and Betko, J. and Morvic, M. and Novak, J.}, title = {Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Nov{\´a}k ... A. F{\"o}rster ...}, series = {Applied physics letters. 69 (1996), H. 17}, journal = {Applied physics letters. 69 (1996), H. 17}, isbn = {0003-6951}, pages = {2563 -- 2565}, year = {1996}, language = {en} } @article{FoersterBetkoKordosetal.1994, author = {F{\"o}rster, Arnold and Betko, J. and Kordos, P. and Kuklovsky, S.}, title = {Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. F{\"o}rster ...}, series = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, journal = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, isbn = {0921-5107}, pages = {147 -- 150}, year = {1994}, language = {en} } @article{FoersterBertuccioPullia1997, author = {F{\"o}rster, Arnold and Bertuccio, G. and Pullia, A.}, title = {Pixel X-ray detectors in epitaxial gallium arsenide withhigh-energy resolution capabilities (Fano factor experimentaldetermination) / G. Bertuccio ; A. Pullia ; J. Lauter ; A. F{\"o}rster ...}, series = {IEEE transactions on nuclear science. 44 (1997), H. 1}, journal = {IEEE transactions on nuclear science. 44 (1997), H. 1}, isbn = {0018-9499}, pages = {1 -- 5}, year = {1997}, language = {en} } @article{FoersterBelyaevVitusevichetal.2002, author = {F{\"o}rster, Arnold and Belyaev, A. E. and Vitusevich, S.A. and Eaves, L.}, title = {Photoresponse spectra in p-i-n diodes containing quantum dots. Belyaev, A.E.; Vitusevich, S.A.; Eaves, L.; Main, P.C.; Henini, M.; F{\"o}rster, A.; Reetz, W.; Danylyuk, S.V.}, series = {Nanotechnology. 13 (2002), H. 1}, journal = {Nanotechnology. 13 (2002), H. 1}, pages = {94 -- 96}, year = {2002}, language = {en} } @article{FoersterAppenzellerSchroer1996, author = {F{\"o}rster, Arnold and Appenzeller, J. and Schroer, C.}, title = {Electron interference in a T-shaped quantum transistor based on Schottky-gate technology / J. Appenzeller ; Ch. Schroer ; Th. Sch{\"a}pers ... A. F{\"o}rster ...}, series = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15}, journal = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15}, isbn = {1095-3795}, pages = {9959 -- 9963}, year = {1996}, language = {en} } @article{FoersterAdamMikulicsetal.2002, author = {F{\"o}rster, Arnold and Adam, R. and Mikulics, M. and Schelten, J.}, title = {Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R.}, series = {Applied Physics Letters. 81 (2002), H. 18}, journal = {Applied Physics Letters. 81 (2002), H. 18}, isbn = {1077-3118}, pages = {3485 -- 3487}, year = {2002}, language = {en} } @article{Foerster1995, author = {F{\"o}rster, Arnold}, title = {Ultrahigh frequency measurements of magnetic penetration length and surface impedance of YBa2Cu3O7-x microstriplines on Si and GaAs substrates . R{\"u}ders, F; Hollricher, O.; Copetti, C. A. ; F{\"o}rster, A. ; Buchal, Ch. ; Prusseit, W. ; Kinder, H.}, series = {Journal of Applied Physics. 77 (1995), H. 10}, journal = {Journal of Applied Physics. 77 (1995), H. 10}, isbn = {1089-7550}, pages = {5282 -- 5286}, year = {1995}, language = {en} } @article{Foerster2003, author = {F{\"o}rster, Arnold}, title = {Layer Deposition I}, series = {Fundamentals of nanoelectronics / Stefan Bl{\"u}gel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums J{\"u}lich : Materie und Material ; 14 ; 34)}, journal = {Fundamentals of nanoelectronics / Stefan Bl{\"u}gel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums J{\"u}lich : Materie und Material ; 14 ; 34)}, publisher = {Forschungszentrum, Zentralbibliothek}, address = {J{\"u}lich}, isbn = {3-89336-319-X}, pages = {C2.1 -- C2.13}, year = {2003}, language = {en} } @article{Foerster2000, author = {F{\"o}rster, Arnold}, title = {Resonant tunneling diodes operating as modern quantum transport devices}, series = {Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2}, journal = {Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2}, publisher = {Allied Publ.}, address = {New Delhi [u.a.]}, isbn = {81-7023-998-2}, pages = {966 -- 966}, year = {2000}, language = {en} } @book{Foerster1988, author = {F{\"o}rster, Arnold}, title = {Anwendung der hochaufl{\"o}senden Elektronenenergieverlustspektroskopie zum Studium von Halbleiterschichtsystemen. - (Berichte der Kernforschungsanlage J{\"u}lich / Kernforschungsanlage ; 2247)}, publisher = {Zentralbibliothek der Kernforschungsanlage}, address = {J{\"u}lich}, pages = {104 S. : graph. Darst.}, year = {1988}, language = {de} } @article{Foerster1994, author = {F{\"o}rster, Arnold}, title = {Resonant tunneling diodes : the effect of structural properties on their performance}, series = {Festk{\"o}rperprobleme = Advances in solid state physics. 33 (1994)}, journal = {Festk{\"o}rperprobleme = Advances in solid state physics. 33 (1994)}, isbn = {0065-3357}, pages = {37 -- 62}, year = {1994}, language = {en} } @article{DarmoSchaefferFoersteretal.2000, author = {Darmo, J. and Sch{\"a}ffer, F. and F{\"o}rster, Arnold and Kordos, P.}, title = {Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range}, series = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]}, journal = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {0780359399}, pages = {147 -- 150}, year = {2000}, language = {en} } @article{BaeckerRaueSchusseretal.2012, author = {B{\"a}cker, Matthias and Raue, Markus and Schusser, Sebastian and Jeitner, C. and Breuer, L. and Wagner, P. and Poghossian, Arshak and F{\"o}rster, Arnold and Mang, Thomas and Sch{\"o}ning, Michael Josef}, title = {Microfluidic chip with integrated microvalves based on temperature- and pH-responsive hydrogel thin films}, series = {Physica Status Solidi (a)}, volume = {209}, journal = {Physica Status Solidi (a)}, number = {5}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {1862-6319}, doi = {10.1002/pssa.201100763}, pages = {839 -- 845}, year = {2012}, abstract = {Two types of microvalves based on temperature-responsive poly(N-isopropylacrylamide) (PNIPAAm) and pH-responsive poly(sodium acrylate) (PSA) hydrogel films have been developed and tested. The PNIPAAm and PSA hydrogel films were prepared by means of in situ photopolymerization directly inside the fluidic channel of a microfluidic chip fabricated by combining Si and SU-8 technologies. The swelling/shrinking properties and height changes of the PNIPAAm and PSA films inside the fluidic channel were studied at temperatures of deionized water from 14 to 36 °C and different pH values (pH 3-12) of Titrisol buffer, respectively. Additionally, in separate experiments, the lower critical solution temperature (LCST) of the PNIPAAm hydrogel was investigated by means of a differential scanning calorimetry (DSC) and a surface plasmon resonance (SPR) method. Mass-flow measurements have shown the feasibility of the prepared hydrogel films to work as an on-chip integrated temperature- or pH-responsive microvalve capable to switch the flow channel on/off.}, language = {en} }