@article{WaltherGerthsenCariusetal.1993,
  author    = {Walther, T. and Gerthsen, D. and Carius, Reinhard and F{\"o}rster, Arnold},
  title     = {AlAs/GaAs Quantum well structures: Interface properties investigated by high-resolution transmission electron microscopy and photoluminescence spectroscopy / T. Walther ; D. Gerthsen ; R. Carius ; A. F{\"o}rster ...},
  series = {Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134)},
  journal   = {Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134)},
  publisher = {Institute of Physics},
  address   = {Bristol [u.a.]},
  isbn      = {0-7503-0290-9},
  pages     = {449 -- ff.},
  year      = {1993},
  language  = {en}
}
@article{FoersterZettlerMikkelsenetal.1992,
  author    = {F{\"o}rster, Arnold and Zettler, J.-T. and Mikkelsen, H. and Leo, K.},
  title     = {Modulated ellipsometric measurements and transfer-matrix calculation of the field-dependent dielectric function of a multiple quantum well / J.-Th. Zettler ; H. Mikkelsen ; K. Leo ... A. F{\"o}rster},
  series = {Physical Review B . 46 (1992), H. 24},
  journal   = {Physical Review B . 46 (1992), H. 24},
  isbn      = {0163-1829},
  pages     = {15955 -- 15962},
  year      = {1992},
  language  = {en}
}
@article{FoersterLentzenGerthsen1992,
  author    = {F{\"o}rster, Arnold and Lentzen, M. and Gerthsen, D.},
  title     = {Growth mode and strain relaxation during the initial stage of InxGa1-xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. F{\"o}rster ...},
  series = {Applied physics letters. 60 (1992), H. 1},
  journal   = {Applied physics letters. 60 (1992), H. 1},
  isbn      = {0003-6951},
  pages     = {74 -- 76},
  year      = {1992},
  language  = {en}
}
@article{FoersterReschEsseraetal.1992,
  author    = {F{\"o}rster, Arnold and Resch, U. and Essera, N. and Raptis, Y. S.},
  title     = {Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfaces / U. Resch ; N. Essera ; Y. S. Raptis ... A. F{\"o}rster ...},
  series = {Surface Science. 269-270 (1992)},
  journal   = {Surface Science. 269-270 (1992)},
  isbn      = {0039-6028},
  pages     = {797 -- 803},
  year      = {1992},
  language  = {en}
}
@article{FoersterBruggerMeiners1991,
  author    = {F{\"o}rster, Arnold and Brugger, H. and Meiners, U.},
  title     = {High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. W{\"o}lk ... A. F{\"o}rster ...},
  series = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman},
  journal   = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman},
  publisher = {Inst. of Electrical and Electronics Engineers},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-0491-8},
  pages     = {39 -- ff.},
  year      = {1991},
  language  = {en}
}
@article{FoersterRizziLueth1989,
  author    = {F{\"o}rster, Arnold and Rizzi, Angela and L{\"u}th, H.},
  title     = {Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. F{\"o}rster ; H. L{\"u}th},
  series = {Surface Science. 211 - 212 (1989)},
  journal   = {Surface Science. 211 - 212 (1989)},
  isbn      = {0039-6028},
  pages     = {620 -- 629},
  year      = {1989},
  language  = {en}
}
@article{FoersterLayetLueth1989,
  author    = {F{\"o}rster, Arnold and Layet, J. M. and L{\"u}th, H.},
  title     = {Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy},
  series = {Applied Surface Science. 41 - 42 (1989)},
  journal   = {Applied Surface Science. 41 - 42 (1989)},
  isbn      = {0169-4332},
  pages     = {306 -- 311},
  year      = {1989},
  language  = {en}
}
@article{FoersterLueth1989,
  author    = {F{\"o}rster, Arnold and L{\"u}th, H.},
  title     = {Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces},
  series = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 7 (1989), H. 4},
  journal   = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 7 (1989), H. 4},
  isbn      = {1071-1023},
  pages     = {720 -- 724},
  year      = {1989},
  language  = {en}
}
@article{FoersterLayetLueth1988,
  author    = {F{\"o}rster, Arnold and Layet, J. M. and L{\"u}th, H.},
  title     = {The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) /},
  series = {Applied Physics A: Materials Science \& Processing. 47 (1988), H. 1},
  journal   = {Applied Physics A: Materials Science \& Processing. 47 (1988), H. 1},
  isbn      = {0947-8396},
  pages     = {95 -- 97},
  year      = {1988},
  language  = {en}
}
@article{FoersterSchaeferLondschien1988,
  author    = {F{\"o}rster, Arnold and Sch{\"a}fer, B.-J. and Londschien, M.},
  title     = {Arsenic passivation of MOMBE grown GaAs surfaces / B. -J. Sch{\"a}fer ; A. F{\"o}rster ; M. Londschien ...},
  series = {Surface Science. 204 (1988), H. 3},
  journal   = {Surface Science. 204 (1988), H. 3},
  isbn      = {0039-6028},
  pages     = {485 -- 490},
  year      = {1988},
  language  = {en}
}