@inproceedings{FoersterStockMontanarietal.2006,
  author    = {F{\"o}rster, Arnold and Stock, J{\"u}rgen and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans},
  title     = {Fabrication and characterisation of GaAs Gunn Diode Chips for applications at 77 GHz in automotive industry},
  url       = {http://nbn-resolving.de/urn:nbn:de:hbz:a96-opus-1462},
  year      = {2006},
  abstract  = {GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.},
  subject      = {Biosensor},
  language  = {en}
}
@article{TillmannFoerster2000,
  author    = {Tillmann, K. and F{\"o}rster, Arnold},
  title     = {Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)},
  series = {Thin Solid Films. 368 (2000), H. 1},
  journal   = {Thin Solid Films. 368 (2000), H. 1},
  isbn      = {0040-6090},
  pages     = {93 -- 104},
  year      = {2000},
  language  = {en}
}
@article{KrafftFoersterHartetal.2001,
  author    = {Krafft, B. and F{\"o}rster, Arnold and Hart, A. van der and Sch{\"a}pers, T.},
  title     = {Control of Aharonov-Bohm oscillations in a AlGaAs/GaAs ring by asymmetric and symmetric gate biasing},
  series = {Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4},
  journal   = {Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4},
  isbn      = {1386-9477},
  pages     = {635 -- 641},
  year      = {2001},
  language  = {en}
}
@article{DarmoSchaefferFoersteretal.2000,
  author    = {Darmo, J. and Sch{\"a}ffer, F. and F{\"o}rster, Arnold and Kordos, P.},
  title     = {Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range},
  series = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]},
  journal   = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {0780359399},
  pages     = {147 -- 150},
  year      = {2000},
  language  = {en}
}
@article{StockMalindretosIndlekoferetal.2001,
  author    = {Stock, J. and Malindretos, J. and Indlekofer, K.M. and P{\"o}ttgens, Michael and F{\"o}rster, Arnold and L{\"u}th, Hans},
  title     = {A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits},
  series = {IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6},
  journal   = {IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6},
  isbn      = {0018-9383},
  pages     = {1028 -- 1032},
  year      = {2001},
  language  = {en}
}
@article{HodelOrzatiMarsoetal.2000,
  author    = {Hodel, U. and Orzati, A. and Marso, M. and Homann, O. and Fox, A. and Hart, A. v. d. and F{\"o}rster, Arnold and Kordos, P. and L{\"u}th, H.},
  title     = {A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver},
  series = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials},
  journal   = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials},
  publisher = {IEEE Service Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-6320-5},
  pages     = {466 -- 469},
  year      = {2000},
  language  = {en}
}