@article{HueningEifertHandricketal.2006,
  author    = {H{\"u}ning, Felix and Eifert, T. and Handrick, K. and Neuhausen, U.},
  title     = {Computational Magnetochemistry: Complementary Quantum Mechanical Tools / Eifert, T. ; Handrick, K. ; H{\"u}ning, F. ; Neuhausen, U. ; Schilder, H. ; Lueken, H.},
  series = {20 Jahre Wilhelm-Klemm-Stiftung / Kuratorium der Wilhelm-Klemm-Stiftung (Hrsg.)},
  journal   = {20 Jahre Wilhelm-Klemm-Stiftung / Kuratorium der Wilhelm-Klemm-Stiftung (Hrsg.)},
  publisher = {Shaker},
  address   = {Aachen},
  isbn      = {978-3-8322-5520-6},
  pages     = {193ff},
  year      = {2006},
  language  = {en}
}
@article{Huening2008,
  author    = {H{\"u}ning, Felix},
  title     = {Die Anforderungen steigen : Entwicklungstrends bei MOSFETs f{\"u}r den Automobilbereich},
  series = {Elektronik-Industrie. 39 (2008), H. 5},
  journal   = {Elektronik-Industrie. 39 (2008), H. 5},
  publisher = {-},
  isbn      = {0174-5522},
  pages     = {74 -- 76},
  year      = {2008},
  language  = {de}
}
@article{Huening2008,
  author    = {H{\"u}ning, Felix},
  title     = {Robusti affidabili per le Sfide dell'automotive},
  series = {Selezione di Elettronica (2008)},
  journal   = {Selezione di Elettronica (2008)},
  publisher = {-},
  pages     = {116 -- 117},
  year      = {2008},
  language  = {de}
}
@article{Huening2008,
  author    = {H{\"u}ning, Felix},
  title     = {Entwicklungstrends bei MOSFETs f{\"u}r den Automobilbereich},
  series = {Elektronik-Industrie . 39 (2008), H. 5},
  journal   = {Elektronik-Industrie . 39 (2008), H. 5},
  publisher = {-},
  isbn      = {0174-5522},
  pages     = {74 -- 76},
  year      = {2008},
  language  = {en}
}
@article{Huening2009,
  author    = {H{\"u}ning, Felix},
  title     = {Mosfet ottimizzati per l'automotive},
  series = {Selezione di Elettronica (2009)},
  journal   = {Selezione di Elettronica (2009)},
  publisher = {-},
  pages     = {115 -- 117},
  year      = {2009},
  language  = {de}
}
@article{Huening2009,
  author    = {H{\"u}ning, Felix},
  title     = {SMD packages for PowerMOSFETs in automotive applications - developments and trends},
  series = {Automotive Designline Europe (2009)},
  journal   = {Automotive Designline Europe (2009)},
  publisher = {-},
  year      = {2009},
  language  = {en}
}
@article{Huening2009,
  author    = {H{\"u}ning, Felix},
  title     = {Hart im Nehmen : Low-Voltage-Powermosfets mit Super-Junction-1-Technologie optimieren},
  series = {Elektronik-Journal. 44 (2009), H. 12},
  journal   = {Elektronik-Journal. 44 (2009), H. 12},
  publisher = {-},
  isbn      = {0013-5674},
  pages     = {36 -- 38},
  year      = {2009},
  language  = {de}
}
@article{Huening2011,
  author    = {H{\"u}ning, Felix},
  title     = {PowerMOSFETs in ANL2-Technologie : Ansteuerungen bis in den kW-Bereich mit wenig Verlustleistung und Platzbedarf},
  series = {Elektronik-Industrie},
  volume    = {42},
  journal   = {Elektronik-Industrie},
  number    = {10},
  publisher = {H{\"u}thig},
  address   = {Heidelberg},
  issn      = {0174-5522},
  pages     = {36 -- 39},
  year      = {2011},
  language  = {de}
}
@incollection{Huening2012,
  author    = {H{\"u}ning, Felix},
  title     = {PowerMOSFETs f{\"u}r Elektromotoren im Automobil : Vom Fensterheber zum EPS},
  series = {Elektronik im Kraftfahrzeug : Innovationen bei Systemen und Komponenten ; mit 7 Tabellen},
  booktitle = {Elektronik im Kraftfahrzeug : Innovationen bei Systemen und Komponenten ; mit 7 Tabellen},
  editor    = {Schmitz, G{\"u}nter},
  publisher = {Expert Verlag},
  address   = {Renningen},
  isbn      = {978-3-8169-3110-2},
  pages     = {71 -- 81},
  year      = {2012},
  language  = {de}
}
@article{Huening2012,
  author    = {H{\"u}ning, Felix},
  title     = {Using Trench PowerMOSFETs in Linear Mode},
  series = {Power Electronics Europe (2012)},
  journal   = {Power Electronics Europe (2012)},
  publisher = {DFA Media},
  address   = {Tonbridge},
  issn      = {1748-3530},
  pages     = {27 -- 29},
  year      = {2012},
  abstract  = {If we think about applications for modern Power MOSFETs using trench technology, running them in linear mode may not be top of the priority list. Yet there are multiple uses for Trench Power MOSFETs in linear mode. In fact, even turning the device on and off in switching applications is a form of linear operation. Also, these components can be run in linear mode to protect the device against voltage surges. This article will illustrate the factors that need to be considered for linear operation and show how Trench Power MOSFETs are suited to it.},
  language  = {en}
}