@article{HagemannGudatKunz1975, author = {Hagemann, Hans-J{\"u}rgen and Gudat, W. and Kunz, C.}, title = {Optical constants from the far infrared to the X-ray region: Mg, Al, Cu, Ag, Au, Bi, C, and Al₂O₃}, series = {Journal of the Optical Society of America (JOSA)}, volume = {65}, journal = {Journal of the Optical Society of America (JOSA)}, number = {6}, publisher = {Optical Society of America}, address = {New York}, isbn = {0030-3941}, doi = {10.1364/JOSA.65.000742}, pages = {742 -- 744}, year = {1975}, language = {en} } @article{HagemannGudatKunz1976, author = {Hagemann, Hans-J{\"u}rgen and Gudat, W. and Kunz, C.}, title = {Photoabsorption coefficient of alloys of Al with transition metals V, Fe, Ni and Cu and Pr from 30 to 150 eV photon energy}, series = {Physica status solidi b}, volume = {74}, journal = {Physica status solidi b}, number = {2}, publisher = {Wiley-VCH}, address = {Berlin}, isbn = {0031-8957}, doi = {10.1002/pssb.2220740211}, pages = {507 -- 521}, year = {1976}, abstract = {The absorption coefficient of VAI3, FeAI, NiAI, NiAl2, CuAI2, PrAl2, and of disordered V-AI (16 at\% AI, 28\%, 41\%) and Fe-AI (11\%) alloys has been measured in the region of the M₂,₃ absorption of the transition metals and the Labsorption of AI. The strong changes of the AI spectrum in the region of the 100 eV maximum upon alloying are explained as another evidence of the EXAFS (extended X-ray absorption fine structure) nature of these structures. The broad, prominent absorption peaks from the 3p excitations in V and Fe and from the 4d excitations in Pr are influenced only little on allyoing and thus appear to be of atomic origin. The fine structure at the onset of the Pr 4d transitions is identical in the metal and the alloy but differs from that of Pr oxide. The only M₂,₃ edge which is detectably shifted is that of Ni (up to 2.1 eV), whereas the onset of the AI L₂,₃ edge is shifted in all the alloys (up to 1.1 eV). The shifts are interpreted in accordance with X-ray fluorescence and nuclear resonance measurements as changes of the density of states in the valence band of the alloys.}, language = {en} } @article{Hagemann1978, author = {Hagemann, Hans-J{\"u}rgen}, title = {Loss mechanisms and domain stabilization in doped BaTiO₃}, series = {Journal of Physics C: Solid State Physics}, volume = {11}, journal = {Journal of Physics C: Solid State Physics}, number = {15}, publisher = {n.a.}, address = {London}, isbn = {0022-3719}, doi = {10.1088/0022-3719/11/15/031}, pages = {3333 -- 3344}, year = {1978}, language = {en} } @article{Hagemann1978, author = {Hagemann, Hans-J{\"u}rgen}, title = {Electrical properties of acceptor-doped BaTiO3 ceramic. Hagemann, H. J.}, series = {Berichte der Deutschen Keramischen Gesellschaft. 55 (1978)}, journal = {Berichte der Deutschen Keramischen Gesellschaft. 55 (1978)}, isbn = {0365-9542}, pages = {353 -- 355}, year = {1978}, language = {en} } @article{HagemannGeittnerMayretal.1993, author = {Hagemann, Hans-J{\"u}rgen and Geittner, P. and Mayr, W. and Opitz, J. F. A.}, title = {Folientechnologie f{\"u}r zuk{\"u}nftige keramische Vielschichtkondensatoren. Geittner, P.; Hagemann, H.-J.;Mayr, W. ; Opitz, J.F.A. ; Schmidl, B.; Warnier, J.}, series = {Ceramic forum international : cfi ; Berichte der Deutschen Keramischen Gesellschaft. 8 (1993), H. 5}, journal = {Ceramic forum international : cfi ; Berichte der Deutschen Keramischen Gesellschaft. 8 (1993), H. 5}, isbn = {0173-9913}, pages = {5 -- 15}, year = {1993}, language = {de} } @article{Hagemann1978, author = {Hagemann, Hans-J{\"u}rgen}, title = {Reduction of hysteresis losses of ferroelectric BaTiO3. Hagemann, H. J.}, series = {Ferroelectrics. 22 (1978)}, journal = {Ferroelectrics. 22 (1978)}, isbn = {0015-0193}, pages = {743 -- 743}, year = {1978}, language = {en} } @article{HagemannIhrig1979, author = {Hagemann, Hans-J{\"u}rgen and Ihrig, H.}, title = {Valence change and phase stability of 3d-doped BaTiO3 annealed in oxygen and hydrogen. Hagemann, H. J.; Ihrig, H.}, series = {Physical Review B.. 20 (1979), H. 9}, journal = {Physical Review B.. 20 (1979), H. 9}, isbn = {1095-3795}, pages = {3871 -- 3878}, year = {1979}, language = {en} } @article{HagemannGeittnerLeers1989, author = {Hagemann, Hans-J{\"u}rgen and Geittner, P. and Leers, D.}, title = {Intrinsic scattering and absorption losses of Ge- and F-doped optical fibres prepared by PCVD. Geittner, P.; Hagemann, H. J. ; Leers, D.}, series = {Electronics letters : an intern. publication / The Institution of Electrical Engineers. 25 (1989), H. 7}, journal = {Electronics letters : an intern. publication / The Institution of Electrical Engineers. 25 (1989), H. 7}, isbn = {0013-5194}, pages = {436 -- 437}, year = {1989}, language = {en} } @article{HagemannGeittnerWarnieretal.1986, author = {Hagemann, Hans-J{\"u}rgen and Geittner, P. and Warnier, J. and Wilson, H.}, title = {PCVD at high deposition rates. Geittner, P.; Hagemann, H. J.; Warnier, J.; Wilson, H.}, series = {Journal of Lightwave Technology (J-LT) / Institute of Electrical and Electronics Engineers (IEEE). 4 (1986), H. 7}, journal = {Journal of Lightwave Technology (J-LT) / Institute of Electrical and Electronics Engineers (IEEE). 4 (1986), H. 7}, isbn = {0733-8724}, pages = {818 -- 822}, year = {1986}, language = {en} } @article{HagemannGeittnerLydtinetal.1988, author = {Hagemann, Hans-J{\"u}rgen and Geittner, P. and Lydtin, H. and Warnier, J.}, title = {Hybrid technology for large SM-fiber preforms. Geittner, P.; Hagemann, H. J.; Lydtin, H.; Warnier, J.}, series = {Journal of Lightwave Technology (J-LT) / Institute of Electrical and Electronics Engineers (IEEE). 6 (1988), H. 10}, journal = {Journal of Lightwave Technology (J-LT) / Institute of Electrical and Electronics Engineers (IEEE). 6 (1988), H. 10}, isbn = {0733-8724}, pages = {1451 -- 1454}, year = {1988}, language = {en} }