@article{FoersterGriebelIndlekoferetal.1998,
  author    = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, K. M. and L{\"u}th, H.},
  title     = {Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; F{\"o}rster, A.; L{\"u}th, H.},
  series = {Journal of Applied Physics. 84 (1998), H. 12},
  journal   = {Journal of Applied Physics. 84 (1998), H. 12},
  isbn      = {1089-7550},
  pages     = {6719 -- 6724},
  year      = {1998},
  language  = {en}
}
@article{FoersterGriebelIndlekoferetal.1998,
  author    = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, M. and L{\"u}th, H.},
  title     = {Transport through a buried double barrier single electron transistor at low temperatures},
  series = {Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4},
  journal   = {Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4},
  isbn      = {1386-9477},
  pages     = {502 -- 506},
  year      = {1998},
  language  = {en}
}
@article{FoersterGriebelIndlekoferetal.1999,
  author    = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, K.M. and L{\"u}th, H.},
  title     = {Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; F{\"o}rster, A.; L{\"u}th, H.},
  series = {Journal of Physics D: Applied Physics. 32 (1999), H. 14},
  journal   = {Journal of Physics D: Applied Physics. 32 (1999), H. 14},
  isbn      = {1361-6463},
  pages     = {1729 -- 1733},
  year      = {1999},
  language  = {en}
}