@article{SchmidtTonnesmannFoersteretal.2000,
  author    = {Schmidt, R. and Tonnesmann, A. and F{\"o}rster, Arnold and Grimm, M. and Kordos, P. and L{\"u}th, H.},
  title     = {Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer},
  series = {8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society},
  journal   = {8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society},
  publisher = {IEEE Operations Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-6550-X},
  pages     = {95 -- 98},
  year      = {2000},
  language  = {en}
}