@article{VitusevichFoersterLuethetal.2001, author = {Vitusevich, S. A. and F{\"o}rster, Arnold and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V. and Konakova, R. V. and Sheka, D. I.}, title = {Resonant spectroscopy of electric-field-induced superlattices}, series = {Journal of Applied Physics. 90 (2001), H. 6}, journal = {Journal of Applied Physics. 90 (2001), H. 6}, isbn = {1089-7550}, doi = {10.1063/1.1392956}, pages = {2857 -- 2861}, year = {2001}, language = {en} } @article{FoersterBelyaevVitusevichetal.2002, author = {F{\"o}rster, Arnold and Belyaev, A. E. and Vitusevich, S.A. and Eaves, L.}, title = {Photoresponse spectra in p-i-n diodes containing quantum dots. Belyaev, A.E.; Vitusevich, S.A.; Eaves, L.; Main, P.C.; Henini, M.; F{\"o}rster, A.; Reetz, W.; Danylyuk, S.V.}, series = {Nanotechnology. 13 (2002), H. 1}, journal = {Nanotechnology. 13 (2002), H. 1}, pages = {94 -- 96}, year = {2002}, language = {en} } @article{FoersterVitusevichBelyaevetal.2002, author = {F{\"o}rster, Arnold and Vitusevich, S. A. and Belyaev, A. E. and Sheka, D. I.}, title = {Resonant tunneling effect in a periodically modulated electrical field. Vitusevich, S.A.; Forster, A.; Belyaev, A.E.; Sheka, D.I.; Luth, H.; Klein, N.; Danylyuk, S.V.; Konakova, R.}, series = {Proceedings of the Tenth International Conference on Modulated Semiconductor Structures : held at the Johannes Kepler University, Linz, Austria, July 23 - 27, 2001 / MSS 10. Guest ed.: G{\"u}nther Bauer ...}, journal = {Proceedings of the Tenth International Conference on Modulated Semiconductor Structures : held at the Johannes Kepler University, Linz, Austria, July 23 - 27, 2001 / MSS 10. Guest ed.: G{\"u}nther Bauer ...}, publisher = {Elsevier}, address = {Amsterdam [u.a.]}, pages = {811 -- 813}, year = {2002}, language = {en} } @article{VitusevichFoersterReetzetal.2000, author = {Vitusevich, S. A. and F{\"o}rster, Arnold and Reetz, W. and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V.}, title = {Spectral Responsivity of single-quantum-well photodetectors}, series = {Applied Physics Letters. 77 (2000), H. 1}, journal = {Applied Physics Letters. 77 (2000), H. 1}, isbn = {1077-3118}, pages = {16 -- 18}, year = {2000}, language = {en} } @article{VitusevichFoersterIndlekoferetal.2000, author = {Vitusevich, S. A. and F{\"o}rster, Arnold and Indlekofer, K.-M. and L{\"u}th, H. and Belyaev, A. E. and Glavin, B. A. and Konakova, R. V.}, title = {Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes}, series = {Physical Review . B. 61 (2000), H. 16}, journal = {Physical Review . B. 61 (2000), H. 16}, isbn = {1550-235X}, pages = {10898 -- 10904}, year = {2000}, language = {en} } @article{VitusevichFoersterReetzetal.2000, author = {Vitusevich, S. A. and F{\"o}rster, Arnold and Reetz, W. and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V.}, title = {Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode}, series = {Nanotechnology. 11 (2000), H. 4}, journal = {Nanotechnology. 11 (2000), H. 4}, isbn = {1361-6528}, pages = {305 -- 308}, year = {2000}, language = {en} } @article{FoersterVitusevichBelyaev1999, author = {F{\"o}rster, Arnold and Vitusevich, S. A. and Belyaev, A. E.}, title = {Optically controlled 2D tunneling in GaAs delta-doped p-n junction / S. A. Vitusevich ; A. F{\"o}rster ; A. E. Belyaev ...}, series = {Semiconductor Physics, Quantum Electronics \& Optoelectronics (SQO) : International Scientific Journal. 2 (1999), H. 1}, journal = {Semiconductor Physics, Quantum Electronics \& Optoelectronics (SQO) : International Scientific Journal. 2 (1999), H. 1}, isbn = {1605-6582}, pages = {7 -- 10}, year = {1999}, language = {en} } @article{FoersterVitusevichBelyaev1999, author = {F{\"o}rster, Arnold and Vitusevich, S. A. and Belyaev, B. A.}, title = {Intrinsic bistability effect in delta doped tunneling diodes / S. A. Vitusevich ; A. F{\"o}rster ; B. A. Belyaev ...}, series = {Proceedings of the XXVIII International School on Physics of Semiconducting Compounds : Jaszowiec, Poland, June 6 - 11, 1999 / Polish Academy of Sciences, Institute of Physics. Ed. of the proceedings Wojciech Szuszkiewicz}, journal = {Proceedings of the XXVIII International School on Physics of Semiconducting Compounds : Jaszowiec, Poland, June 6 - 11, 1999 / Polish Academy of Sciences, Institute of Physics. Ed. of the proceedings Wojciech Szuszkiewicz}, address = {Warsaw}, pages = {S. 511 - 688 : Ill., graph. Darst.}, year = {1999}, language = {en} } @article{FoersterVitusevichBelyaevetal.1999, author = {F{\"o}rster, Arnold and Vitusevich, S. A. and Belyaev, A. E. and Indlekofer, K. M.}, title = {Resonant tunneling effect in delta p-n GaAs junction. Vitusevich, S. A.; F{\"o}rster, A.; Belyaev, A. E.; Indlekofer, K. M.; L{\"u}th, H.; Konakova, R. V.}, series = {Microelectronic Engineering. 46 (1999), H. 1-4}, journal = {Microelectronic Engineering. 46 (1999), H. 1-4}, isbn = {0167-9317}, pages = {169 -- 172}, year = {1999}, language = {en} } @article{GasparyanPoghossianVitusevichetal.2009, author = {Gasparyan, F. V. and Poghossian, Arshak and Vitusevich, S. A. and Petrychuk, M. V. and Sydoruk, V. A. and Surmalyan, A. V. and Siqueira, J. R. and Oliveira, O. N. and Offenh{\"a}usser, A. and Sch{\"o}ning, Michael Josef}, title = {Low Frequency Noise In Electrolyte-Gate Field-Effect Devices Functionalized With Dendrimer/Carbon-Nanotube Multilayers}, series = {Noise and fluctuations : 20th International Conference on Noise and Fluctuations, ICNF 2009, Pisa, Italy, 14 - 19 June 2009 / ed. Massimo Macucci; Giovanni Basso}, journal = {Noise and fluctuations : 20th International Conference on Noise and Fluctuations, ICNF 2009, Pisa, Italy, 14 - 19 June 2009 / ed. Massimo Macucci; Giovanni Basso}, publisher = {American Inst. of Physics}, address = {Melville, NY}, isbn = {9780735406650}, pages = {133 -- 136}, year = {2009}, language = {en} } @article{GasparyanVitusevichOffenhaeusseretal.2011, author = {Gasparyan, F.V. and Vitusevich, S.A. and Offenh{\"a}usser, A. and Sch{\"o}ning, Michael Josef}, title = {Modified charge fluctuation noise model for electrolyte-insulator-semiconductor devices}, series = {Modern Physics Letters B (MPLB). 25 (2011), H. 11}, journal = {Modern Physics Letters B (MPLB). 25 (2011), H. 11}, publisher = {World Scientific Publ.}, address = {Singapur}, isbn = {0217-9849}, pages = {831 -- 840}, year = {2011}, language = {en} }