@article{FoersterKordosMarsoetal.1998,
  author    = {F{\"o}rster, Arnold and Kordos, P. and Marso, M. and R{\"u}ders, F.},
  title     = {550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs. Kordos, P., F{\"o}rster, A.; Marso, M.; R{\"u}ders, F.},
  series = {Electronics Letters. 34 (1998), H. 1},
  journal   = {Electronics Letters. 34 (1998), H. 1},
  isbn      = {1350-911X},
  pages     = {119 -- 120},
  year      = {1998},
  language  = {en}
}
@article{FoersterKordosMarso1997,
  author    = {F{\"o}rster, Arnold and Kordos, P. and Marso, M.},
  title     = {Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs / P. Kordos ; M. Marso, ; A. F{\"o}rster ...},
  series = {Applied physics letters. 71 (1997), H. 8},
  journal   = {Applied physics letters. 71 (1997), H. 8},
  isbn      = {0003-6951},
  pages     = {1118 -- 1120},
  year      = {1997},
  language  = {en}
}
@article{FoersterKordosRuders1997,
  author    = {F{\"o}rster, Arnold and Kordos, P. and Ruders, F.},
  title     = {Properties of LT MBE GaAs for photomixing up to THz frequencies / P. Kordos ; F. Ruders ; M. Marso ; A. F{\"o}rster},
  series = {Proceedings : 8 - 11 December 1996, Australian National University, Canberra, Australia / ed.: C. Jagadish},
  journal   = {Proceedings : 8 - 11 December 1996, Australian National University, Canberra, Australia / ed.: C. Jagadish},
  publisher = {IEEE Service Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-3374-8},
  pages     = {71 -- ff.},
  year      = {1997},
  language  = {en}
}
@article{FoersterDarmoDubeckyetal.1996,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.},
  title     = {Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. F{\"o}rster},
  series = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]},
  journal   = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]},
  address   = {Piscataway, NJ [u.a.]},
  isbn      = {0-7803-3095-1},
  pages     = {67 -- ff.},
  year      = {1996},
  language  = {en}
}
@article{FoersterKordosBetko1995,
  author    = {F{\"o}rster, Arnold and Kordos, P. and Betko, J.},
  title     = {Semi-insulating GaAs layers grown by molecular-beam epitaxy / P. Kordos ; A. F{\"o}rster ; J. Betko ...},
  series = {Applied physics letters. 67 (1995), H. 7},
  journal   = {Applied physics letters. 67 (1995), H. 7},
  isbn      = {0003-6951},
  pages     = {983 -- 985},
  year      = {1995},
  language  = {en}
}
@article{FoersterKordosBetko1995,
  author    = {F{\"o}rster, Arnold and Kordos, P. and Betko, J.},
  title     = {Electrical and structural characterization of MBE GaAs grown at temperatures between 200 and 600 °C / P. Kordos ; J. Betko; A. F{\"o}rster ...},
  series = {Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)},
  journal   = {Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)},
  publisher = {Institute of Physics},
  address   = {Bristol [u.a.]},
  isbn      = {0-7503-0226-7},
  pages     = {295 -- ff.},
  year      = {1995},
  language  = {en}
}
@article{FoersterDarmoDubeckyetal.1994,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.},
  title     = {Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubeck{\´y} ; P. Kordos ; A. F{\"o}rster ...},
  series = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3},
  journal   = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3},
  isbn      = {0921-5107},
  pages     = {393 -- 396},
  year      = {1994},
  language  = {en}
}
@article{FoersterBetkoKordosetal.1994,
  author    = {F{\"o}rster, Arnold and Betko, J. and Kordos, P. and Kuklovsky, S.},
  title     = {Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. F{\"o}rster ...},
  series = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3},
  journal   = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3},
  isbn      = {0921-5107},
  pages     = {147 -- 150},
  year      = {1994},
  language  = {en}
}