@inproceedings{FoersterStockMontanarietal.2006,
  author    = {F{\"o}rster, Arnold and Stock, J{\"u}rgen and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans},
  title     = {Fabrication and characterisation of GaAs Gunn Diode Chips for applications at 77 GHz in automotive industry},
  url       = {http://nbn-resolving.de/urn:nbn:de:hbz:a96-opus-1462},
  year      = {2006},
  abstract  = {GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.},
  subject      = {Biosensor},
  language  = {en}
}
@article{FoersterDarmoDubeckyetal.1996,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.},
  title     = {Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. F{\"o}rster},
  series = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]},
  journal   = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]},
  address   = {Piscataway, NJ [u.a.]},
  isbn      = {0-7803-3095-1},
  pages     = {67 -- ff.},
  year      = {1996},
  language  = {en}
}
@article{TillmannFoerster2000,
  author    = {Tillmann, K. and F{\"o}rster, Arnold},
  title     = {Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)},
  series = {Thin Solid Films. 368 (2000), H. 1},
  journal   = {Thin Solid Films. 368 (2000), H. 1},
  isbn      = {0040-6090},
  pages     = {93 -- 104},
  year      = {2000},
  language  = {en}
}
@article{VitusevichFoersterReetzetal.2000,
  author    = {Vitusevich, S. A. and F{\"o}rster, Arnold and Reetz, W. and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V.},
  title     = {Spectral Responsivity of single-quantum-well photodetectors},
  series = {Applied Physics Letters. 77 (2000), H. 1},
  journal   = {Applied Physics Letters. 77 (2000), H. 1},
  isbn      = {1077-3118},
  pages     = {16 -- 18},
  year      = {2000},
  language  = {en}
}
@article{FoersterRosenauerOberstetal.1999,
  author    = {F{\"o}rster, Arnold and Rosenauer, A. and Oberst, W. and Gerthsen, D.},
  title     = {Atomic scale analysis of the indium distribution in InGaAs/GaAs (001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions. Rosenauer, A. ; Oberst, W. ; Gerthsen, D. ; F{\"o}rster, A.},
  series = {Thin Solid Films. 357 (1999)},
  journal   = {Thin Solid Films. 357 (1999)},
  isbn      = {0040-6090},
  pages     = {18 -- 21},
  year      = {1999},
  language  = {en}
}
@article{FoersterZamdmerHuetal.1999,
  author    = {F{\"o}rster, Arnold and Zamdmer, N. and Hu, Qing and Verghese, S.},
  title     = {Mode-Discriminating Photoconductor and Coplanar Wave-Guide Circuits for Picosecond Sampling. Zamdmer, N.; Hu, Qing ; Verghese, S. ; F{\"o}rster, A.},
  series = {Applied Physics Letters. 74 (1999), H. 7},
  journal   = {Applied Physics Letters. 74 (1999), H. 7},
  isbn      = {1077-3118},
  pages     = {1039 -- 1041},
  year      = {1999},
  language  = {en}
}
@article{VitusevichFoersterIndlekoferetal.2000,
  author    = {Vitusevich, S. A. and F{\"o}rster, Arnold and Indlekofer, K.-M. and L{\"u}th, H. and Belyaev, A. E. and Glavin, B. A. and Konakova, R. V.},
  title     = {Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes},
  series = {Physical Review . B. 61 (2000), H. 16},
  journal   = {Physical Review . B. 61 (2000), H. 16},
  isbn      = {1550-235X},
  pages     = {10898 -- 10904},
  year      = {2000},
  language  = {en}
}
@article{Foerster2003,
  author    = {F{\"o}rster, Arnold},
  title     = {Layer Deposition I},
  series = {Fundamentals of nanoelectronics / Stefan Bl{\"u}gel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums J{\"u}lich : Materie und Material ; 14 ; 34)},
  journal   = {Fundamentals of nanoelectronics / Stefan Bl{\"u}gel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums J{\"u}lich : Materie und Material ; 14 ; 34)},
  publisher = {Forschungszentrum, Zentralbibliothek},
  address   = {J{\"u}lich},
  isbn      = {3-89336-319-X},
  pages     = {C2.1 -- C2.13},
  year      = {2003},
  language  = {en}
}
@article{FoersterKiesslichWackeretal.2003,
  author    = {F{\"o}rster, Arnold and Kiesslich, G. and Wacker, A. and Scholl, E.},
  title     = {Nonlinear charging effect of quantum dots in a p-i-n diode. Kiesslich, G.; Wacker, A.; Scholl, E.; Vitusevich, S.A.; Belyaev, A.E.; Danylyuk, S.V.; Forster, A.; Klein, N.; Henini, M.},
  series = {Physical Review B. 68 (2003)},
  journal   = {Physical Review B. 68 (2003)},
  isbn      = {1550-235X},
  year      = {2003},
  language  = {en}
}
@article{FoersterStockIndlekofer2002,
  author    = {F{\"o}rster, Arnold and Stock, J. and Indlekofer, K. M.},
  title     = {Perspectives of resonant tunneling diodes},
  series = {Recent research developments in materials science \& engineering/ 1,2},
  journal   = {Recent research developments in materials science \& engineering/ 1,2},
  publisher = {Transworld Research Network},
  address   = {Trivandrum, India},
  isbn      = {81-7895-057-X},
  pages     = {527 -- 556},
  year      = {2002},
  language  = {en}
}