@article{HeuermannEmmrichBongartz2022, author = {Heuermann, Holger and Emmrich, Thomas and Bongartz, Simon}, title = {Microwave spark plug to support ignitions with high compression ratios}, series = {IEEE Transactions on Plasma Science}, journal = {IEEE Transactions on Plasma Science}, number = {Early Access}, publisher = {IEEE}, issn = {1939-9375}, doi = {10.1109/TPS.2022.3183690}, pages = {1 -- 6}, year = {2022}, abstract = {Upcoming gasoline engines should run with a larger number of fuels beginning from petrol over methanol up to gas by a wide range of compression ratios and a homogeneous charge. In this article, the microwave (MW) spark plug, based on a high-speed frequency hopping system, is introduced as a solution, which can support a nitrogen compression ratio up to 1:39 in a chamber and more. First, an overview of the high-speed frequency hopping MW ignition and operation system as well as the large number of applications are presented. Both gives an understanding of this new base technology for MW plasma generation. Focus of the theoretical part is the explanation of the internal construction of the spark plug, on the achievable of the high voltage generation as well as the high efficiency to hold the plasma. In detail, the development process starting with circuit simulations and ending with the numerical multiphysics field simulations is described. The concept is evaluated with a reference prototype covering the frequency range between 2.40 and 2.48 GHz and working over a large power range from 20 to 200 W. A larger number of different measurements starting by vector hot-S11 measurements and ending by combined working scenarios out of hot temperature, high pressure and charge motion are winding up the article. The limits for the successful pressure tests were given by the pressure chamber. Pressures ranged from 1 to 39 bar and charge motion up to 25 m/s as well as temperatures from 30◦ to 125◦.}, language = {en} } @article{HueningJaekelFrancoisetal.1996, author = {H{\"u}ning, Felix and Jaekel, C. and Francois, I. and Kyas, G.}, title = {Microwave surface impedance measurements on high-Tc superconductors / Jaekel, C. ; Francois, I. ; Kyas, G. ; H{\"u}ning, F. ; Roskos, H. G. ; Borghs, G. ; Kurz, H.}, series = {Czechoslovak Journal of Physics. 46 (1996), H. Suppl. 2}, journal = {Czechoslovak Journal of Physics. 46 (1996), H. Suppl. 2}, number = {46}, publisher = {Springer Science+Business Media}, address = {Dordrecht}, isbn = {1572-9486}, pages = {1117 -- 1118}, year = {1996}, language = {en} } @article{SchoeningNaetherAugeretal.2005, author = {Sch{\"o}ning, Michael Josef and N{\"a}ther, Niko and Auger, V. and Poghossian, Arshak and Koudelka-Hep, M.}, title = {Miniaturised flow-through cell with integrated capacitive EIS sensor fabricated at wafer level using Si and SU-8 technologies}, series = {Sensors and Actuators B. 108 (2005), H. 1-2}, journal = {Sensors and Actuators B. 108 (2005), H. 1-2}, isbn = {0925-4005}, pages = {986 -- 992}, year = {2005}, language = {en} } @article{SimonisDawgulLuethetal.2005, author = {Simonis, A. and Dawgul, M. and L{\"u}th, H. and Sch{\"o}ning, Michael Josef}, title = {Miniaturised reference electrodes for field-effect sensors compatible to silicon chip technology}, series = {Electrochimica Acta. 51 (2005), H. 5}, journal = {Electrochimica Acta. 51 (2005), H. 5}, isbn = {0013-4686}, doi = {10.1016/j.electacta.2005.04.063}, pages = {930 -- 937}, year = {2005}, language = {en} } @article{SteinseiferKashefiHormesetal.2009, author = {Steinseifer, Ulrich and Kashefi, Ali and Hormes, Marcus and Schoberer, Mark and Orlikowsky, Thorsten and Behbahani, Mehdi and Behr, Marek and Schmitz-Rode, Thomas}, title = {Miniaturization of ECMO Systems : Engineering Challenges and Methods}, series = {Artificial Organs. 33 (2009), H. 5}, journal = {Artificial Organs. 33 (2009), H. 5}, isbn = {1525-1594}, pages = {A55 -- A55}, year = {2009}, language = {en} } @article{SchoeningRonkelCrottetal.1997, author = {Sch{\"o}ning, Michael Josef and Ronkel, F. and Crott, M. and Thust, M. (u.a.)}, title = {Miniaturization of potentiometric sensors using porous silicon microtechnology}, series = {Electrochimica Acta. 42 (1997), H. 22}, journal = {Electrochimica Acta. 42 (1997), H. 22}, isbn = {0013-4686}, pages = {3185 -- 3193}, year = {1997}, language = {en} } @article{MiyamotoKanekoMatsuoetal.2012, author = {Miyamoto, Ko-ichiro and Kaneko, Kazumi and Matsuo, Akira and Wagner, Torsten and Kanoh, Shin{\´i}chiro and Sch{\"o}ning, Michael Josef and Yoshinobu, Tatsuo}, title = {Miniaturized chemical imaging sensor system using an OLED display panel}, series = {Sensors and Actuators B: Chemical}, volume = {170}, journal = {Sensors and Actuators B: Chemical}, publisher = {Elsevier}, address = {Amsterdam}, issn = {0925-4005}, doi = {10.1016/j.snb.2011.02.029}, pages = {82 -- 87}, year = {2012}, abstract = {The chemical imaging sensor is a semiconductor-based chemical sensor that can visualize the two-dimensional distribution of specific ions or molecules in the solution. In this study, we developed a miniaturized chemical imaging sensor system with an OLED display panel as a light source that scans the sensor plate. In the proposed configuration, the display panel is placed directly below the sensor plate and illuminates the back surface. The measured area defined by illumination can be arbitrarily customized to fit the size and the shape of the sample to be measured. The waveform of the generated photocurrent, the current-voltage characteristics and the pH sensitivity were investigated and pH imaging with this miniaturized system was demonstrated.}, language = {en} } @article{MiyamotoKanekoMatsuoetal.2010, author = {Miyamoto, Ko-ichiro and Kaneko, Kazumi and Matsuo, Akira and Wagner, Torsten and Kanoh, Shin`ichiro and Sch{\"o}ning, Michael Josef and Yoshinobu, Tatsuo}, title = {Miniaturized chemical imaging sensor system using an OLED display panel}, series = {Procedia Engineering. 5 (2010)}, journal = {Procedia Engineering. 5 (2010)}, isbn = {1877-7058}, pages = {516 -- 519}, year = {2010}, language = {en} } @article{SchoeningNaetherAugeretal.2004, author = {Sch{\"o}ning, Michael Josef and N{\"a}ther, Niko and Auger, V. and Poghossian, Arshak and Koudelka-Hep, M.}, title = {Miniaturized flow-through cell with integrated capacitive EIS sensors fabricated at wafer level using Si and Su-8 technologies}, series = {Technical digest of the 10th International Meeting on Chemical Sensors, July 11 - 14, 2004, Tsukuba, Japan / Japan Association of Chemical Sensors}, journal = {Technical digest of the 10th International Meeting on Chemical Sensors, July 11 - 14, 2004, Tsukuba, Japan / Japan Association of Chemical Sensors}, publisher = {Japan Association of Chemical Sensors}, address = {Fukuoka}, pages = {554 -- 555}, year = {2004}, language = {en} } @article{MolinnusIkenJohnenetal.2022, author = {Molinnus, Denise and Iken, Heiko and Johnen, Anna Lynn and Richstein, Benjamin and Hellmich, Lena and Poghossian, Arshak and Knoch, Joachim and Sch{\"o}ning, Michael Josef}, title = {Miniaturized pH-Sensitive Field-Effect Capacitors with Ultrathin Ta₂O₅ Films Prepared by Atomic Layer Deposition}, series = {physica status solidi (a) applications and materials science}, volume = {219}, journal = {physica status solidi (a) applications and materials science}, number = {8}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {1862-6319}, doi = {10.1002/pssa.202100660}, pages = {7 Seiten}, year = {2022}, abstract = {Miniaturized electrolyte-insulator-semiconductor capacitors (EISCAPs) with ultrathin gate insulators have been studied in terms of their pH-sensitive sensor characteristics: three different EISCAP systems consisting of Al-p-Si-Ta2O5(5 nm), Al-p-Si-Si3N4(1 or 2 nm)-Ta2O5 (5 nm), and Al-p-Si-SiO2(3.6 nm)-Ta2O5(5 nm) layer structures are characterized in buffer solution with different pH values by means of capacitance-voltage and constant capacitance method. The SiO2 and Si3N4 gate insulators are deposited by rapid thermal oxidation and rapid thermal nitridation, respectively, whereas the Ta2O5 film is prepared by atomic layer deposition. All EISCAP systems have a clear pH response, favoring the stacked gate insulators SiO2-Ta2O5 when considering the overall sensor characteristics, while the Si3N4(1 nm)-Ta2O5 stack delivers the largest accumulation capacitance (due to the lower equivalent oxide thickness) and a higher steepness in the slope of the capacitance-voltage curve among the studied stacked gate insulator systems.}, language = {en} }