@article{LaumannMainz2012,
  author    = {Laumann, J{\"o}rg and Mainz, Stefan},
  title     = {Direkte Ermittlung der erforderlichen Einspanntiefe von I‑f{\"o}rmigen Stahlquerschnitten in Betonkonstruktionen},
  volume    = {81},
  number    = {11},
  publisher = {Wiley},
  address   = {Weinheim},
  issn      = {1437-1049},
  doi       = {10.1002/stab.201201620},
  pages     = {850 -- 860},
  year      = {2012},
  abstract  = {F{\"u}r die Ermittlung der erforderlichen Einspanntiefe von eingespannten Stahlquerschnitten in Betonkonstruktionen existieren verschiedene Bemessungsmodelle. Diese basieren vorwiegend auf Grundlage nationaler Normen wie z. B. DIN 18800 [1] und DIN 1045 [2], die durch die europ{\"a}ische Normung ersetzt wurden. Aus diesem Grund wird in diesem Aufsatz ein Berechnungsmodell f{\"u}r die erforderliche Einspanntiefe von eingespannten Stahlquerschnitten in Betonkonstruktionen auf Grundlage des Eurocodes vorgestellt. Das Grundger{\"u}st f{\"u}r dieses Berechnungsmodell bildet das Verfahren nach Kindmann und Laumann, welches in [3] behandelt wurde. Gleichzeitig werden neue Formeln zur direkten Ermittlung der Mindesteinspanntiefe vorgestellt. Behandelt werden gewalzte I-Profile f{\"u}r einachsige Biegung um die starke Achse (y-y) mit Drucknormalkraft.},
  language  = {de}
}
@inproceedings{Butenweg2012,
  author    = {Butenweg, Christoph},
  title     = {Eurocode 8 : Erdbebenauslegung von Tragwerken},
  series = {Eurocodes 2012 kompakt - Chancen nutzen : 36. Darmst{\"a}dter Massivbauseminar Zukunftsf{\"a}higes Planen und Bauen, 7. und 8. M{\"a}rz},
  booktitle = {Eurocodes 2012 kompakt - Chancen nutzen : 36. Darmst{\"a}dter Massivbauseminar Zukunftsf{\"a}higes Planen und Bauen, 7. und 8. M{\"a}rz},
  publisher = {Freunde des Inst. f{\"u}r Massivbau der TU},
  address   = {Darmstadt},
  organization    = {Darmst{\"a}dter Massivbauseminar <36, 2012>},
  pages     = {257 -- 272},
  year      = {2012},
  language  = {de}
}
@book{Thomas2012,
  author    = {Thomas, Axel},
  title     = {Rhetorische Knallfr{\"o}sche - reloaded : Zitatensammlung f{\"u}r Politik und Wirtschaft},
  publisher = {Neck + Heyn},
  address   = {Aachen},
  pages     = {201 S. : Ill.},
  year      = {2012},
  language  = {de}
}
@misc{AhlbornGerlachIkenetal.2012,
  author    = {Ahlborn, Kristina and Gerlach, Frank and Iken, Heiko and Sch{\"o}ning, Michael Josef and Vonau, Winfried},
  title     = {Miniaturisierte, potentiometrische Indikatorelektrode und Verfahren zu deren Herstellung : Offenlegungsschrift},
  pages     = {7 S.},
  year      = {2012},
  language  = {de}
}
@inproceedings{DachwaldFeldmannEspeetal.2012,
  author    = {Dachwald, Bernd and Feldmann, Marco and Espe, Clemens and Plescher, Engelbert and Konstantinidis, K. and Forstner, R.},
  title     = {Enceladus explorer - A maneuverable subsurface probe for autonomous navigation through deep ice},
  series = {63rd International Astronautical Congress 2012, IAC 2012; Naples; Italy; 1 October 2012 through 5 October 2012. (Proceedings of the International Astronautical Congress, IAC ; 3)},
  booktitle = {63rd International Astronautical Congress 2012, IAC 2012; Naples; Italy; 1 October 2012 through 5 October 2012. (Proceedings of the International Astronautical Congress, IAC ; 3)},
  publisher = {Curran},
  address   = {Red Hook, NY},
  organization    = {International Astronautical Congress <63, 2012, Napoli>},
  isbn      = {978-1-62276-979-7},
  pages     = {1756 -- 1766},
  year      = {2012},
  language  = {en}
}
@inproceedings{KernSchelthoffMathieu2012,
  author    = {Kern, Alexander and Schelthoff, Christof and Mathieu, Moritz},
  title     = {Calculation of interception efficiencies for mesh-type air-terminations according to IEC 62305-3 using a dynamic electro-geometrical model},
  series = {International Conference on Lightning Protection (ICLP) : 2 - 7 Sept. 2012, Vienna},
  booktitle = {International Conference on Lightning Protection (ICLP) : 2 - 7 Sept. 2012, Vienna},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  organization    = {International Conference on Lightning Protection <2012, Wien>},
  isbn      = {978-1-4673-1896-9 (E-Book) ; 978-1-4673-1898-3 (Print)},
  pages     = {1 -- 6},
  year      = {2012},
  language  = {en}
}
@inproceedings{LoPiparoKernMazzetti2012,
  author    = {Lo Piparo, G. B. and Kern, Alexander and Mazzetti, C.},
  title     = {Some masterpoints about risk due to lightning},
  series = {International Conference on Lightning Protection (ICLP) : 2 - 7 Sept. 2012, Vienna},
  booktitle = {International Conference on Lightning Protection (ICLP) : 2 - 7 Sept. 2012, Vienna},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  organization    = {International Conference on Lightning Protection <2012, Wien>},
  isbn      = {978-1-4673-1896-9 (E-Book) ; 978-1-4673-1898-3 (Print)},
  pages     = {1 -- 6},
  year      = {2012},
  language  = {en}
}
@article{BragardvanHoekDeDoncker2012,
  author    = {Bragard, Michael and van Hoek, H. and De Doncker, R. W.},
  title     = {A major design step in IETO concept realization that allows overcurrent protection and pushes limits of switching performance},
  series = {IEEE transactions on power electronics},
  volume    = {27},
  journal   = {IEEE transactions on power electronics},
  number    = {9},
  publisher = {IEEE},
  address   = {New York},
  issn      = {0885-8993},
  doi       = {10.1109/TPEL.2012.2189136},
  pages     = {4163 -- 4171},
  year      = {2012},
  abstract  = {This paper presents the latest prototype of the integrated emitter turn-off thyristor concept, which potentially ranks among thyristor high-power devices like the gate turn-off thyristor and the integrated gate-commutated thyristor (IGCT). Due to modifications of the external driver stage and mechanical press-pack design optimization, this prototype allows for full device characterization. The turn-off capability was increased to 1600 A with an active silicon area of 823mm2 . This leads to a transient peak power of 672.1kW/cm² . Within this paper, measurements and concept assessment are presented and a comparison to state-of-the-art IGCT devices is provided.},
  language  = {en}
}
@article{BragardBragard2012,
  author    = {Bragard, G. and Bragard, Michael},
  title     = {Ein kosteng{\"u}nstiges, universelles Modellbauinterface},
  series = {Der mathematische und naturwissenschaftliche Unterricht : MNU ; Organ des Deutschen Vereins zur F{\"o}rderung des Mathematischen und Naturwissenschaftlichen Unterrichts e.V.},
  volume    = {65},
  journal   = {Der mathematische und naturwissenschaftliche Unterricht : MNU ; Organ des Deutschen Vereins zur F{\"o}rderung des Mathematischen und Naturwissenschaftlichen Unterrichts e.V.},
  number    = {5},
  publisher = {Seeberger},
  address   = {Neuss},
  issn      = {0025-5866},
  pages     = {290 -- 293},
  year      = {2012},
  abstract  = {Wir stellen einen USB-Baustein vor, der eine kosteng{\"u}nstige und universelle M{\"o}glichkeit schafft , im Unterricht den Themenkreis Messen-Steuern-Regeln zu behandeln. Die Funktionalit{\"a}t orientiert sich am CVK-Interface der Firma Fischertechnik. Im Gegensatz zu kommerziellen L{\"o}sungen erlaubt unser Aufbau auch den preiswerten Einsatz in Gruppen- oder Einzelarbeit. Abschließend berichten wir {\"u}ber ein Beispiel aus dem Unterrichtseinsatz.},
  language  = {de}
}
@phdthesis{Bragard2012,
  author    = {Bragard, Michael},
  title     = {The integrated emitter turn-off thyristor : an innovative MOS-gated high-power device. - (Aachener Beitr{\"a}ge des ISEA ; 62)},
  publisher = {Shaker},
  address   = {Aachen},
  isbn      = {978-3-8440-1152-4},
  pages     = {III, 164 S. : Ill., graph. Darst.},
  year      = {2012},
  abstract  = {This thesis introduces the Integrated Emitter Turn-Off (IETO) Thyristor as a new high-power device. Known state-of-the-art research activities like the Dual GCT, the ETO thyristor and the ICT were presented and critically reviewed. A comparison with commercialized solutions identifies the pros and cons of each type of device family. Based on this analysis, the IETO structure is proposed, covering most benefits of each device class. In particular the combination of a MOS-assisted turn-off with a thyristor-based device allows a voltage-controlled MOS switching and the low on-state voltage of the thyristors. The following synthesis of an IETO device stands on a three-dimensional field of optimization spanned by electric, mechanical and thermal aspects. From an electric point of view, the lowest possible parasitic inductance and resistance within the commutation path are optimization criteria. The mechanical construction has to withstand the required contact pressure of multiple kilo Newtons. Finally, thermal borders limit the maximum average current of the device. FEM simulations covering these three aspects are performed for several design proposals. An IETO prototype is constructed and measurements on various test benches attest thermal, mechanical and electric performance. A local decoupling of the external driver stage and the presspack housing is presented by a cable connection. This separation enables a thermal and mechanical independence, which is advantageous in terms of vibrations and thermal cycles including increased reliability. The electric pulse performance of the prototype device is a factor of 3.1 above today''s solutions. In single-pulse measurements, a current up to 1600 A was successfully turned off at 115°C with an active silicon area of 823 mm². One reason for this increased turn-off capability is the extremely low-inductive construction. Additional functionality of the IETO thyristor like over-current self-protection and defined short-circuit failure state are successfully verified.},
  language  = {en}
}