@inproceedings{BragardRongeDeDoncker2011,
  author    = {Bragard, Michael and Ronge, C. and De Doncker, R. W.},
  title     = {Sandwich design of high-power thyristor based devices with integrated MOSFET structure},
  series = {Proceedings of the 2011 - 14th - European Conference on Power Electronics and Applications (EPE 2011) : Aug. 30, 2011 - Sept. 1, 2011, Birmingham, United Kingdom},
  booktitle = {Proceedings of the 2011 - 14th - European Conference on Power Electronics and Applications (EPE 2011) : Aug. 30, 2011 - Sept. 1, 2011, Birmingham, United Kingdom},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-61284-167-0 (Print)},
  year      = {2011},
  language  = {en}
}
@inproceedings{BragardGottschlichDeDoncker2011,
  author    = {Bragard, Michael and Gottschlich, J. and De Doncker, R. W.},
  title     = {Design and realization of a credit card size driver stage for high power thyristor based devices with integrated MOS structure},
  series = {2011 IEEE 8th International Conference on Power Electronics and ECCE Asia (ICPE \& ECCE 2011) : Jeju, South Korea, 30 May 2011 - 3 June 2011 / [co-sponsored by the Korean Institute of Power Electronics ...]},
  booktitle = {2011 IEEE 8th International Conference on Power Electronics and ECCE Asia (ICPE \& ECCE 2011) : Jeju, South Korea, 30 May 2011 - 3 June 2011 / [co-sponsored by the Korean Institute of Power Electronics ...]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-61284-958-4 (Print)},
  doi       = {10.1109/ICPE.2011.5944661},
  pages     = {1182 -- 1189},
  year      = {2011},
  language  = {en}
}
@article{BragardvanHoekDeDoncker2012,
  author    = {Bragard, Michael and van Hoek, H. and De Doncker, R. W.},
  title     = {A major design step in IETO concept realization that allows overcurrent protection and pushes limits of switching performance},
  series = {IEEE transactions on power electronics},
  volume    = {27},
  journal   = {IEEE transactions on power electronics},
  number    = {9},
  publisher = {IEEE},
  address   = {New York},
  issn      = {0885-8993},
  doi       = {10.1109/TPEL.2012.2189136},
  pages     = {4163 -- 4171},
  year      = {2012},
  abstract  = {This paper presents the latest prototype of the integrated emitter turn-off thyristor concept, which potentially ranks among thyristor high-power devices like the gate turn-off thyristor and the integrated gate-commutated thyristor (IGCT). Due to modifications of the external driver stage and mechanical press-pack design optimization, this prototype allows for full device characterization. The turn-off capability was increased to 1600 A with an active silicon area of 823mm2 . This leads to a transient peak power of 672.1kW/cm² . Within this paper, measurements and concept assessment are presented and a comparison to state-of-the-art IGCT devices is provided.},
  language  = {en}
}
@inproceedings{BragardKoellenspergerDeDoncker2007,
  author    = {Bragard, Michael and K{\"o}llensperger, P. and De Doncker, R. W.},
  title     = {Der Internally Commutated Thyristor (ICT) : ein neuartiger GCT mit integrierter Ausschalteinheit},
  series = {"Nowoczesne urządzenia zasilające w energetyce" : X międzynarodowa konferencja naukowo techniczna, Zakopane, 14-16 marca 2007 r. : materiały konferencyjne},
  booktitle = {"Nowoczesne urządzenia zasilające w energetyce" : X międzynarodowa konferencja naukowo techniczna, Zakopane, 14-16 marca 2007 r. : materiały konferencyjne},
  editor    = {Dmowski, Antoni},
  publisher = {APS Energia},
  address   = {Warszawa},
  isbn      = {83-918709-7-9},
  pages     = {7.1 -- 7.9},
  year      = {2007},
  language  = {de}
}
@inproceedings{KoellenspergerBragardPlumetal.2007,
  author    = {K{\"o}llensperger, P. and Bragard, Michael and Plum, T. and De Doncker, R. W.},
  title     = {The dual GCT : a new high-power device using optimized GCT technology},
  series = {Conference record of the 2007 IEEE Industry Applications Conference : 42. IAS annual meeting ; September 23 - 27, 2007, New Orleans, Louisiana, USA},
  booktitle = {Conference record of the 2007 IEEE Industry Applications Conference : 42. IAS annual meeting ; September 23 - 27, 2007, New Orleans, Louisiana, USA},
  publisher = {IEEE Operations Center},
  address   = {Piscataway, NJ},
  isbn      = {978-1-4244-1260-0 (Online)},
  doi       = {10.1109/07IAS.2007.76},
  pages     = {358 -- 365},
  year      = {2007},
  language  = {en}
}
@article{KoellenspergerBragardPlumetal.2009,
  author    = {K{\"o}llensperger, P. and Bragard, Michael and Plum, T. and De Doncker, R. W.},
  title     = {The dual GCT : new high-power device using optimized GCT technology},
  series = {IEEE transactions on industry applications},
  volume    = {45},
  journal   = {IEEE transactions on industry applications},
  number    = {5},
  issn      = {0093-9994},
  doi       = {10.1109/TIA.2009.2027364},
  pages     = {1754 -- 1762},
  year      = {2009},
  language  = {en}
}
@inproceedings{BragardSoltauDeDonckeretal.2010,
  author    = {Bragard, Michael and Soltau, N. and De Doncker, R. W. and Schmiegel, A.},
  title     = {Design and implementation of a 5 kW photovoltaic system with li-ion battery and additional DC-DC converter},
  series = {2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]},
  booktitle = {2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-4244-5286-6 (Print)},
  doi       = {10.1109/ECCE.2010.5618220},
  pages     = {2944 -- 2949},
  year      = {2010},
  language  = {en}
}
@inproceedings{BragardConradDeDoncker2010,
  author    = {Bragard, Michael and Conrad, M. and De Doncker, R. W.},
  title     = {The integrated emitter turn-off thyristor (IETO) : an innovative thyristor based high power semiconductor device using MOS assisted turn-off},
  series = {2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]},
  booktitle = {2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-4244-5286-6 (Print)},
  doi       = {10.1109/ECCE.2010.5618410},
  pages     = {4551 -- 4557},
  year      = {2010},
  language  = {en}
}
@article{BragardConradvanHoeketal.2011,
  author    = {Bragard, Michael and Conrad, M. and van Hoek, H. and De Doncker, R. W.},
  title     = {The integrated emitter turn-off thyristor (IETO) : an innovative thyristor-based high power semiconductor device using MOS assisted turn-off},
  series = {IEEE transactions on industry applications},
  volume    = {47},
  journal   = {IEEE transactions on industry applications},
  number    = {5},
  publisher = {IEEE},
  address   = {New York},
  issn      = {0093-9994},
  doi       = {10.1109/TIA.2011.2161432},
  pages     = {2175 -- 2182},
  year      = {2011},
  language  = {en}
}
@misc{BragardDeDonckerMuraetal.2011,
  author    = {Bragard, Michael and De Doncker, R. W. and Mura, F and Dick, C.},
  title     = {Halbleiterbauelement und Verfahren zur Herstellung desselben [Offenlegungsschrift]},
  publisher = {Deutsches Patent- und Markenamt / Europ{\"a}isches Patentamt / WIPO},
  address   = {M{\"u}nchen / Den Hague / Geneva},
  pages     = {10 S. / 23 S. : graph. Darst.},
  year      = {2011},
  language  = {de}
}