@article{HagemannBreitschuhGraberetal.2004, author = {Hagemann, Hans-J{\"u}rgen and Breitschuh, S. and Graber, S. and Schmitz, G{\"u}nter}, title = {Internet Laboratory Courses with Remote Access and Control of Real Measurements on Sensors and Electronic Components}, series = {Mechatronics \& Robotics 2004 : Aachen, Germany, September 13 - 15, 2004 / [APS - European Centre for Mechatronics]. P. Drews (ed.)}, journal = {Mechatronics \& Robotics 2004 : Aachen, Germany, September 13 - 15, 2004 / [APS - European Centre for Mechatronics]. P. Drews (ed.)}, publisher = {Eysoldt}, address = {Aachen}, isbn = {3-938153-30-X}, pages = {1280 -- 1284}, year = {2004}, language = {en} } @article{HagemannBachmannLadeetal.1995, author = {Hagemann, Hans-J{\"u}rgen and Bachmann, P. K. and Lade, H. and Leers, D.}, title = {Thermal properties of C/H-, C/H/O-, C/H/N- and C/H/X-grown polycrystalline CVD diamond. P. K. Bachmann, H. J. Hagemann, H. Lade, ...}, series = {Diamond and Related Material. Vol 4. (1995), H. Issue 5-6}, journal = {Diamond and Related Material. Vol 4. (1995), H. Issue 5-6}, publisher = {Elsevier Science}, address = {New York, NY [u.a.]}, pages = {820 -- 826}, year = {1995}, language = {en} } @article{HagemannBackhausGoessner2002, author = {Hagemann, Hans-J{\"u}rgen and Backhaus, U. and Goessner, S.}, title = {Collaborative eLearning Concepts for University Level Online Laboratory Courses in Engineering. U. Backhaus, S. Goessner, H. J. Hagemann}, series = {Proceedings Online Educa Berlin: 8th International Conference on Technology Supported Learning \& Training. 2002}, journal = {Proceedings Online Educa Berlin: 8th International Conference on Technology Supported Learning \& Training. 2002}, pages = {62 -- 66}, year = {2002}, language = {en} } @article{HagemannBachmannLadeetal.1994, author = {Hagemann, Hans-J{\"u}rgen and Bachmann, P.K. and Lade, H. and Leers, D.}, title = {CVD Diamond Growth: Gas Compositions and Film Properties / P.K. Bachmann, H.J. Hagemann, H. Lade, D. Leers, D.U. Wiechert and H. Wilson}, series = {Advanced materials '94 : proceedings of the NIRIM International Symposium on Advanced Materials '94, Tsukuba, Japan, March 13 - 17, 1994 / National Institute for Research in Inorganic Materials. Ed. by M. Kamo ...}, journal = {Advanced materials '94 : proceedings of the NIRIM International Symposium on Advanced Materials '94, Tsukuba, Japan, March 13 - 17, 1994 / National Institute for Research in Inorganic Materials. Ed. by M. Kamo ...}, publisher = {International Communications Specialists}, address = {Tokyo}, pages = {115 -- 120}, year = {1994}, language = {en} } @article{HagemannBachmannLadeetal.1994, author = {Hagemann, Hans-J{\"u}rgen and Bachmann, P.K. and Lade, H. and Leers, D.}, title = {Diamond chemical vapor deposition: gas compositions and film properties / Bachmann, P.K.; Hagemann, H.-J.; Lade, H; Leers, D.; Picht, F.; Wiechert, D.U.; Wilson, H.}, series = {Diamond, SiC and nitride wide bandgap semiconductors : symposium held April 4 - 8, 1994, San Francisco, California, U.S.A. / ed.: Calvin H. Carter, Jr. ...}, journal = {Diamond, SiC and nitride wide bandgap semiconductors : symposium held April 4 - 8, 1994, San Francisco, California, U.S.A. / ed.: Calvin H. Carter, Jr. ...}, address = {Pittsburgh, Penn.}, isbn = {1-55899-239-1}, pages = {267 -- 277}, year = {1994}, language = {en} } @article{HagemannCassidy1994, author = {Hagemann, Hans-J{\"u}rgen and Cassidy, Wiliam D.}, title = {Diamond growth rates and quality: dependence on gas phase cpmposition / William D. Cassidy [...], Hans-Jurgen Hagemann}, series = {Diamond, SiC and nitride wide bandgap semiconductors : symposium held April 4 - 8, 1994, San Francisco, California, U.S.A. / ed.: Calvin H. Carter, Jr. ....}, journal = {Diamond, SiC and nitride wide bandgap semiconductors : symposium held April 4 - 8, 1994, San Francisco, California, U.S.A. / ed.: Calvin H. Carter, Jr. ....}, address = {Pittsburgh, Penn. ,}, isbn = {1-55899-239-1}, pages = {285 -- 291}, year = {1994}, language = {en} } @article{HagemannGudatKunz1974, author = {Hagemann, Hans-J{\"u}rgen and Gudat, W. and Kunz, C.}, title = {Photoabsorption of alloys of Al with transition metals V, Fe, Ni and Cu and Pr near the Al L₂,₃-edge}, series = {Solid State Communications}, volume = {15}, journal = {Solid State Communications}, number = {3}, publisher = {Elsevier}, address = {Amsterdam}, isbn = {0038-1098}, doi = {10.1016/0038-1098(74)91165-X}, pages = {655 -- 658}, year = {1974}, abstract = {The onset of Al 2p transitions of VAl₃, FeAl, NiAl, NiAl₃, CuAl₂, PrAl₂ and the disordered alloys V-Al (16 at \% Al, 28\%, 41\%), Fe-Al (11\%) is shifted up to 1.1 eV. New pronounced structure develops close to the onset which for NiAl agrees with a density of states calculation by Connolly and Johnson.}, language = {en} } @article{HagemannGudatKunz1975, author = {Hagemann, Hans-J{\"u}rgen and Gudat, W. and Kunz, C.}, title = {Optical constants from the far infrared to the X-ray region: Mg, Al, Cu, Ag, Au, Bi, C, and Al₂O₃}, series = {Journal of the Optical Society of America (JOSA)}, volume = {65}, journal = {Journal of the Optical Society of America (JOSA)}, number = {6}, publisher = {Optical Society of America}, address = {New York}, isbn = {0030-3941}, doi = {10.1364/JOSA.65.000742}, pages = {742 -- 744}, year = {1975}, language = {en} } @article{HagemannGudatKunz1976, author = {Hagemann, Hans-J{\"u}rgen and Gudat, W. and Kunz, C.}, title = {Photoabsorption coefficient of alloys of Al with transition metals V, Fe, Ni and Cu and Pr from 30 to 150 eV photon energy}, series = {Physica status solidi b}, volume = {74}, journal = {Physica status solidi b}, number = {2}, publisher = {Wiley-VCH}, address = {Berlin}, isbn = {0031-8957}, doi = {10.1002/pssb.2220740211}, pages = {507 -- 521}, year = {1976}, abstract = {The absorption coefficient of VAI3, FeAI, NiAI, NiAl2, CuAI2, PrAl2, and of disordered V-AI (16 at\% AI, 28\%, 41\%) and Fe-AI (11\%) alloys has been measured in the region of the M₂,₃ absorption of the transition metals and the Labsorption of AI. The strong changes of the AI spectrum in the region of the 100 eV maximum upon alloying are explained as another evidence of the EXAFS (extended X-ray absorption fine structure) nature of these structures. The broad, prominent absorption peaks from the 3p excitations in V and Fe and from the 4d excitations in Pr are influenced only little on allyoing and thus appear to be of atomic origin. The fine structure at the onset of the Pr 4d transitions is identical in the metal and the alloy but differs from that of Pr oxide. The only M₂,₃ edge which is detectably shifted is that of Ni (up to 2.1 eV), whereas the onset of the AI L₂,₃ edge is shifted in all the alloys (up to 1.1 eV). The shifts are interpreted in accordance with X-ray fluorescence and nuclear resonance measurements as changes of the density of states in the valence band of the alloys.}, language = {en} } @article{Hagemann1978, author = {Hagemann, Hans-J{\"u}rgen}, title = {Loss mechanisms and domain stabilization in doped BaTiO₃}, series = {Journal of Physics C: Solid State Physics}, volume = {11}, journal = {Journal of Physics C: Solid State Physics}, number = {15}, publisher = {n.a.}, address = {London}, isbn = {0022-3719}, doi = {10.1088/0022-3719/11/15/031}, pages = {3333 -- 3344}, year = {1978}, language = {en} }