@article{MolinnusDrinicIkenetal.2021, author = {Molinnus, Denise and Drinic, Aleksander and Iken, Heiko and Kr{\"o}ger, Nadja and Zinser, Max and Smeets, Ralf and K{\"o}pf, Marius and Kopp, Alexander and Sch{\"o}ning, Michael Josef}, title = {Towards a flexible electrochemical biosensor fabricated from biocompatible Bombyx mori silk}, series = {Biosensors and Bioelectronics}, volume = {183}, journal = {Biosensors and Bioelectronics}, number = {Art. 113204}, publisher = {Elsevier}, address = {Amsterdam}, issn = {0956-5663}, doi = {10.1016/j.bios.2021.113204}, year = {2021}, language = {en} } @article{WertIkenSchoeningetal.2021, author = {Wert, Stefan and Iken, Heiko and Sch{\"o}ning, Michael Josef and Matysik, Frank-Michael}, title = {Development of a temperature-pulse enhanced electrochemical glucose biosensor and characterization of its stability via scanning electrochemical microscopy}, series = {Electroanalysis}, journal = {Electroanalysis}, number = {Early View}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {1521-4109}, doi = {10.1002/elan.202100089}, year = {2021}, abstract = {Glucose oxidase (GOx) is an enzyme frequently used in glucose biosensors. As increased temperatures can enhance the performance of electrochemical sensors, we investigated the impact of temperature pulses on GOx that was drop-coated on flattened Pt microwires. The wires were heated by an alternating current. The sensitivity towards glucose and the temperature stability of GOx was investigated by amperometry. An up to 22-fold increase of sensitivity was observed. Spatially resolved enzyme activity changes were investigated via scanning electrochemical microscopy. The application of short (<100 ms) heat pulses was associated with less thermal inactivation of the immobilized GOx than long-term heating.}, language = {en} } @article{GivanoudiCornelisRasschaertetal.2021, author = {Givanoudi, Stella and Cornelis, Peter and Rasschaert, Geertrui and Wackers, Gideon and Iken, Heiko and Rolka, David and Yongabi, Derick and Robbens, Johan and Sch{\"o}ning, Michael Josef and Heyndrickx, Marc and Wagner, Patrick}, title = {Selective Campylobacter detection and quantification in poultry: A sensor tool for detecting the cause of a common zoonosis at its source}, series = {Sensors and Actuators B: Chemical}, journal = {Sensors and Actuators B: Chemical}, number = {In Press, Journal Pre-proof}, publisher = {Elsevier}, address = {Amsterdam}, issn = {0925-4005}, doi = {10.1016/j.snb.2021.129484}, pages = {Article 129484}, year = {2021}, language = {en} } @article{MolinnusIkenJohnenetal.2022, author = {Molinnus, Denise and Iken, Heiko and Johnen, Anna Lynn and Richstein, Benjamin and Hellmich, Lena and Poghossian, Arshak and Knoch, Joachim and Sch{\"o}ning, Michael Josef}, title = {Miniaturized pH-Sensitive Field-Effect Capacitors with Ultrathin Ta₂O₅ Films Prepared by Atomic Layer Deposition}, series = {physica status solidi (a) applications and materials science}, volume = {219}, journal = {physica status solidi (a) applications and materials science}, number = {8}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {1862-6319}, doi = {10.1002/pssa.202100660}, pages = {7 Seiten}, year = {2022}, abstract = {Miniaturized electrolyte-insulator-semiconductor capacitors (EISCAPs) with ultrathin gate insulators have been studied in terms of their pH-sensitive sensor characteristics: three different EISCAP systems consisting of Al-p-Si-Ta2O5(5 nm), Al-p-Si-Si3N4(1 or 2 nm)-Ta2O5 (5 nm), and Al-p-Si-SiO2(3.6 nm)-Ta2O5(5 nm) layer structures are characterized in buffer solution with different pH values by means of capacitance-voltage and constant capacitance method. The SiO2 and Si3N4 gate insulators are deposited by rapid thermal oxidation and rapid thermal nitridation, respectively, whereas the Ta2O5 film is prepared by atomic layer deposition. All EISCAP systems have a clear pH response, favoring the stacked gate insulators SiO2-Ta2O5 when considering the overall sensor characteristics, while the Si3N4(1 nm)-Ta2O5 stack delivers the largest accumulation capacitance (due to the lower equivalent oxide thickness) and a higher steepness in the slope of the capacitance-voltage curve among the studied stacked gate insulator systems.}, language = {en} }