@inproceedings{BindzusBragard2018,
  author    = {Bindzus, Manuel and Bragard, Michael},
  title     = {Motivating Intuitive Understanding of the Switched Reluctance Machine in the Education of Undergraduate Students},
  series = {2018 IEEE 59th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)},
  booktitle = {2018 IEEE 59th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)},
  isbn      = {978-1-5386-6903-7},
  doi       = {10.1109/RTUCON.2018.8659870},
  pages     = {1 -- 6},
  year      = {2018},
  language  = {en}
}
@phdthesis{Bragard2012,
  author    = {Bragard, Michael},
  title     = {The integrated emitter turn-off thyristor : an innovative MOS-gated high-power device. - (Aachener Beitr{\"a}ge des ISEA ; 62)},
  publisher = {Shaker},
  address   = {Aachen},
  isbn      = {978-3-8440-1152-4},
  pages     = {III, 164 S. : Ill., graph. Darst.},
  year      = {2012},
  abstract  = {This thesis introduces the Integrated Emitter Turn-Off (IETO) Thyristor as a new high-power device. Known state-of-the-art research activities like the Dual GCT, the ETO thyristor and the ICT were presented and critically reviewed. A comparison with commercialized solutions identifies the pros and cons of each type of device family. Based on this analysis, the IETO structure is proposed, covering most benefits of each device class. In particular the combination of a MOS-assisted turn-off with a thyristor-based device allows a voltage-controlled MOS switching and the low on-state voltage of the thyristors. The following synthesis of an IETO device stands on a three-dimensional field of optimization spanned by electric, mechanical and thermal aspects. From an electric point of view, the lowest possible parasitic inductance and resistance within the commutation path are optimization criteria. The mechanical construction has to withstand the required contact pressure of multiple kilo Newtons. Finally, thermal borders limit the maximum average current of the device. FEM simulations covering these three aspects are performed for several design proposals. An IETO prototype is constructed and measurements on various test benches attest thermal, mechanical and electric performance. A local decoupling of the external driver stage and the presspack housing is presented by a cable connection. This separation enables a thermal and mechanical independence, which is advantageous in terms of vibrations and thermal cycles including increased reliability. The electric pulse performance of the prototype device is a factor of 3.1 above today''s solutions. In single-pulse measurements, a current up to 1600 A was successfully turned off at 115°C with an active silicon area of 823 mm². One reason for this increased turn-off capability is the extremely low-inductive construction. Additional functionality of the IETO thyristor like over-current self-protection and defined short-circuit failure state are successfully verified.},
  language  = {en}
}
@misc{BragardBuddeHenteetal.2008,
  author    = {Bragard, Michael and Budde, W. O. and Hente, D. and Jacobs, J. H. A. M. and Waffenschmidt, E.},
  title     = {Lighting system : [patent of invention]},
  publisher = {WIPO / United States Patent and Trademark Office},
  address   = {Geneva / Alexandria, VA},
  pages     = {32 S. : graph. Darst.},
  year      = {2008},
  language  = {en}
}
@inproceedings{BragardConradDeDoncker2010,
  author    = {Bragard, Michael and Conrad, M. and De Doncker, R. W.},
  title     = {The integrated emitter turn-off thyristor (IETO) : an innovative thyristor based high power semiconductor device using MOS assisted turn-off},
  series = {2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]},
  booktitle = {2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-4244-5286-6 (Print)},
  doi       = {10.1109/ECCE.2010.5618410},
  pages     = {4551 -- 4557},
  year      = {2010},
  language  = {en}
}
@article{BragardConradvanHoeketal.2011,
  author    = {Bragard, Michael and Conrad, M. and van Hoek, H. and De Doncker, R. W.},
  title     = {The integrated emitter turn-off thyristor (IETO) : an innovative thyristor-based high power semiconductor device using MOS assisted turn-off},
  series = {IEEE transactions on industry applications},
  volume    = {47},
  journal   = {IEEE transactions on industry applications},
  number    = {5},
  publisher = {IEEE},
  address   = {New York},
  issn      = {0093-9994},
  doi       = {10.1109/TIA.2011.2161432},
  pages     = {2175 -- 2182},
  year      = {2011},
  language  = {en}
}
@inproceedings{BragardGottschlichDeDoncker2011,
  author    = {Bragard, Michael and Gottschlich, J. and De Doncker, R. W.},
  title     = {Design and realization of a credit card size driver stage for high power thyristor based devices with integrated MOS structure},
  series = {2011 IEEE 8th International Conference on Power Electronics and ECCE Asia (ICPE \& ECCE 2011) : Jeju, South Korea, 30 May 2011 - 3 June 2011 / [co-sponsored by the Korean Institute of Power Electronics ...]},
  booktitle = {2011 IEEE 8th International Conference on Power Electronics and ECCE Asia (ICPE \& ECCE 2011) : Jeju, South Korea, 30 May 2011 - 3 June 2011 / [co-sponsored by the Korean Institute of Power Electronics ...]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-61284-958-4 (Print)},
  doi       = {10.1109/ICPE.2011.5944661},
  pages     = {1182 -- 1189},
  year      = {2011},
  language  = {en}
}
@inproceedings{BragardHoekHoegenetal.2018,
  author    = {Bragard, Michael and Hoek, Hauke van and Hoegen, Anne von and Doncker, Rik W. De},
  title     = {Motivation-based Learning: Teaching Fundamentals of Electrical Engineering with an LED Spinning Top},
  series = {2018 IEEE 59th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)},
  booktitle = {2018 IEEE 59th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)},
  isbn      = {978-1-5386-6903-7},
  doi       = {10.1109/RTUCON.2018.8659810},
  pages     = {1 -- 6},
  year      = {2018},
  language  = {en}
}
@inproceedings{BragardRongeDeDoncker2011,
  author    = {Bragard, Michael and Ronge, C. and De Doncker, R. W.},
  title     = {Sandwich design of high-power thyristor based devices with integrated MOSFET structure},
  series = {Proceedings of the 2011 - 14th - European Conference on Power Electronics and Applications (EPE 2011) : Aug. 30, 2011 - Sept. 1, 2011, Birmingham, United Kingdom},
  booktitle = {Proceedings of the 2011 - 14th - European Conference on Power Electronics and Applications (EPE 2011) : Aug. 30, 2011 - Sept. 1, 2011, Birmingham, United Kingdom},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-61284-167-0 (Print)},
  year      = {2011},
  language  = {en}
}
@inproceedings{BragardSoltauDeDonckeretal.2010,
  author    = {Bragard, Michael and Soltau, N. and De Doncker, R. W. and Schmiegel, A.},
  title     = {Design and implementation of a 5 kW photovoltaic system with li-ion battery and additional DC-DC converter},
  series = {2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]},
  booktitle = {2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-4244-5286-6 (Print)},
  doi       = {10.1109/ECCE.2010.5618220},
  pages     = {2944 -- 2949},
  year      = {2010},
  language  = {en}
}
@article{BragardSoltauThomasetal.2010,
  author    = {Bragard, Michael and Soltau, N. and Thomas, S. and De Doncker, R. W.},
  title     = {The balance of renewable sources and user demands in grids : power electronics for modular battery energy storage systems},
  series = {IEEE transactions on power electronics},
  volume    = {25},
  journal   = {IEEE transactions on power electronics},
  number    = {12},
  publisher = {IEEE},
  address   = {New York},
  issn      = {0885-8993},
  doi       = {10.1109/TPEL.2010.2085455},
  pages     = {3049 -- 3056},
  year      = {2010},
  abstract  = {The continuously growing amount of renewable sources starts compromising the stability of electrical grids. Contradictory to fossil fuel power plants, energy production of wind and photovoltaic (PV) energy is fluctuating. Although predictions have significantly improved, an outage of multi-MW offshore wind farms poses a challenging problem. One solution could be the integration of storage systems in the grid. After a short overview, this paper focuses on two exemplary battery storage systems, including the required power electronics. The grid integration, as well as the optimal usage of volatile energy reserves, is presented for a 5- kW PV system for home application, as well as for a 100- MW medium-voltage system, intended for wind farm usage. The efficiency and cost of topologies are investigated as a key parameter for large-scale integration of renewable power at medium- and low-voltage.},
  language  = {en}
}