@article{FoersterDarmoDubeckyetal.1996,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.},
  title     = {Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. F{\"o}rster},
  series = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]},
  journal   = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]},
  address   = {Piscataway, NJ [u.a.]},
  isbn      = {0-7803-3095-1},
  pages     = {67 -- ff.},
  year      = {1996},
  language  = {en}
}
@article{FoersterDarmoDubeckyetal.1994,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.},
  title     = {Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubeck{\´y} ; P. Kordos ; A. F{\"o}rster ...},
  series = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3},
  journal   = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3},
  isbn      = {0921-5107},
  pages     = {393 -- 396},
  year      = {1994},
  language  = {en}
}
@article{FoersterDarmoSchaferetal.2002,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Schafer, F. and Kordos, P.},
  title     = {Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R},
  series = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza},
  journal   = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza},
  publisher = {IEEE Operations Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-7276-X},
  pages     = {87 -- 90},
  year      = {2002},
  language  = {en}
}
@article{FoersterDekorsyKim1996,
  author    = {F{\"o}rster, Arnold and Dekorsy, T. and Kim, A. T. M.},
  title     = {Subpicosecond coherent carrier-phonon dynamics in semiconductor heterostructures / T. Dekorsy ; A. M. T. Kim ; G. C. Cho ... A. F{\"o}rster},
  series = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 3},
  journal   = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 3},
  isbn      = {1095-3795},
  pages     = {1531 -- 1538},
  year      = {1996},
  language  = {en}
}
@article{FoersterDiekerGerthsen1993,
  author    = {F{\"o}rster, Arnold and Dieker, C. and Gerthsen, D.},
  title     = {Microstructure of the AlAs/GaAs and AlAs/InGaAs resonant tunneling diodes and its correlation with the electrical properties / C. Dieker ; D. Gerthsen ; A. F{\"o}rster ...},
  series = {Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134)},
  journal   = {Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134)},
  publisher = {Institute of Physics},
  address   = {Bristol [u.a.]},
  isbn      = {0-7503-0290-9},
  pages     = {253 -- ff.},
  year      = {1993},
  language  = {en}
}
@article{FoersterDubeckyDarmo1994,
  author    = {F{\"o}rster, Arnold and Dubecky, F.. and Darmo, J.},
  title     = {Investigation of deep-level states in bulk and low temperature MBE semiinsulating GaAs by admittance transient spectroscopy / F. Dubecky ; J. Darmo ; M. Darviras ; A. F{\"o}rster ...},
  series = {Semi-insulating III-V materials, Ixtapa, Mexico 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21 - 24 April 1992 / ed. by C. J. Miner ...},
  journal   = {Semi-insulating III-V materials, Ixtapa, Mexico 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21 - 24 April 1992 / ed. by C. J. Miner ...},
  publisher = {Inst. of Physics Publ.},
  address   = {Bristol [u.a.]},
  isbn      = {0-7503-0242-9},
  pages     = {265 -- 272},
  year      = {1994},
  language  = {en}
}
@article{FoersterDoehlerHeber1998,
  author    = {F{\"o}rster, Arnold and D{\"o}hler, G. H and Heber, J.},
  title     = {Hot electrons in n-i-p.i-based devices / G. H. D{\"o}hler ; J. Heber ... A. F{\"o}rster ...},
  series = {Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)},
  journal   = {Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)},
  publisher = {Clarendon Press},
  address   = {Oxford},
  isbn      = {0-19-850058-0},
  pages     = {478 -- 504},
  year      = {1998},
  language  = {en}
}
@article{FoersterGriebelIndlekoferetal.1998,
  author    = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, K. M. and L{\"u}th, H.},
  title     = {Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; F{\"o}rster, A.; L{\"u}th, H.},
  series = {Journal of Applied Physics. 84 (1998), H. 12},
  journal   = {Journal of Applied Physics. 84 (1998), H. 12},
  isbn      = {1089-7550},
  pages     = {6719 -- 6724},
  year      = {1998},
  language  = {en}
}
@article{FoersterGriebelIndlekoferetal.1999,
  author    = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, K.M. and L{\"u}th, H.},
  title     = {Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; F{\"o}rster, A.; L{\"u}th, H.},
  series = {Journal of Physics D: Applied Physics. 32 (1999), H. 14},
  journal   = {Journal of Physics D: Applied Physics. 32 (1999), H. 14},
  isbn      = {1361-6463},
  pages     = {1729 -- 1733},
  year      = {1999},
  language  = {en}
}
@article{FoersterGriebelIndlekoferetal.1998,
  author    = {F{\"o}rster, Arnold and Griebel, M. and Indlekofer, M. and L{\"u}th, H.},
  title     = {Transport through a buried double barrier single electron transistor at low temperatures},
  series = {Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4},
  journal   = {Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4},
  isbn      = {1386-9477},
  pages     = {502 -- 506},
  year      = {1998},
  language  = {en}
}