@article{FoersterDoehlerHeber1998,
  author    = {F{\"o}rster, Arnold and D{\"o}hler, G. H and Heber, J.},
  title     = {Hot electrons in n-i-p.i-based devices / G. H. D{\"o}hler ; J. Heber ... A. F{\"o}rster ...},
  series = {Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)},
  journal   = {Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)},
  publisher = {Clarendon Press},
  address   = {Oxford},
  isbn      = {0-19-850058-0},
  pages     = {478 -- 504},
  year      = {1998},
  language  = {en}
}
@article{FoersterDarmoDubeckyetal.1998,
  author    = {F{\"o}rster, Arnold and Darmo, J. and Dubecky, F. and Kordos, P.},
  title     = {Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; F{\"o}rster, A.},
  series = {Applied Physics Letters. 72 (1998), H. 5},
  journal   = {Applied Physics Letters. 72 (1998), H. 5},
  isbn      = {1077-3118},
  pages     = {590 -- 592},
  year      = {1998},
  language  = {en}
}