@article{RosenauerOberstLitvinovetal.2000,
  author    = {Rosenauer, A. and Oberst, W. and Litvinov, D. and Gerthsen, D. and F{\"o}rster, Arnold and Schmidt, R.},
  title     = {Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy},
  series = {Physical Review B. 61 (2000), H. 12},
  journal   = {Physical Review B. 61 (2000), H. 12},
  isbn      = {1095-3795},
  pages     = {8276 -- 8288},
  year      = {2000},
  language  = {en}
}
@article{FoersterTillmannGerthsenetal.1995,
  author    = {F{\"o}rster, Arnold and Tillmann, K. and Gerthsen, D. and Pfundstein, P.},
  title     = {Structural transformations and strain relaxation mechanisms of In0.6Ga0.4As islands grown by molecular beam epitaxy on GaAs(001) substrates / Tillmann, K. ; Gerthsen, D. ; Pfundstein, P. ; F{\"o}rster, A. ; Urban, K.},
  series = {Journal of applied physics. 78 (1995), H. 6},
  journal   = {Journal of applied physics. 78 (1995), H. 6},
  isbn      = {0021-8979},
  pages     = {3824 -- 3832},
  year      = {1995},
  language  = {en}
}
@article{SrnanekGeurtsLentzeetal.2004,
  author    = {Srnanek, R. and Geurts, J. and Lentze, M. and Irmer, G. and Donoval, D. and Brdecka, P. and Kordos, P. and F{\"o}rster, Arnold and Sciana, B. and Radziewicz, D. and Tlaczala, M.},
  title     = {Study of d-doped GaAs layers by micro-Raman spectroscopy on bevelled samples},
  series = {Applied surface science . 230 (2004), H. 1 -4},
  journal   = {Applied surface science . 230 (2004), H. 1 -4},
  isbn      = {0169-4332},
  pages     = {379 -- 385},
  year      = {2004},
  language  = {en}
}
@article{FoersterDekorsyKim1996,
  author    = {F{\"o}rster, Arnold and Dekorsy, T. and Kim, A. T. M.},
  title     = {Subpicosecond coherent carrier-phonon dynamics in semiconductor heterostructures / T. Dekorsy ; A. M. T. Kim ; G. C. Cho ... A. F{\"o}rster},
  series = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 3},
  journal   = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 3},
  isbn      = {1095-3795},
  pages     = {1531 -- 1538},
  year      = {1996},
  language  = {en}
}
@article{FoersterLachenmannFriedrichetal.1999,
  author    = {F{\"o}rster, Arnold and Lachenmann, S. G. and Friedrich, I. and Uhlisch, D.},
  title     = {Superconductor/semiconductor step junctions: the basic element for hybrid three terminal devices. Lachenmann, S. G., F{\"o}rster, A.; Friedrich, I.; Uhlisch, D.; Sch{\"a}pers, Th.; Kastalsky, A.; Golubov, A. A.},
  series = {Applied Superconductivity. 6 (1999), H. 10-12},
  journal   = {Applied Superconductivity. 6 (1999), H. 10-12},
  isbn      = {0964-1807},
  pages     = {681 -- 688},
  year      = {1999},
  language  = {en}
}
@article{FoersterLachenmannFridrichetal.1999,
  author    = {F{\"o}rster, Arnold and Lachenmann, S. G. and Fridrich, I. and Sch{\"a}pers, T.},
  title     = {Supression of the surface-inversion layer of p-type InAs. Lachenmann, S. G.; Fridrich, I.; F{\"o}rster, A.; Sch{\"a}pers, Th.},
  series = {Journal of Applied Physics. 85 (1999), H. 12},
  journal   = {Journal of Applied Physics. 85 (1999), H. 12},
  isbn      = {1089-7550},
  pages     = {8242 -- 8246},
  year      = {1999},
  language  = {en}
}
@article{FoersterLueth1989,
  author    = {F{\"o}rster, Arnold and L{\"u}th, H.},
  title     = {Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces},
  series = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 7 (1989), H. 4},
  journal   = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 7 (1989), H. 4},
  isbn      = {1071-1023},
  pages     = {720 -- 724},
  year      = {1989},
  language  = {en}
}
@article{FoersterSpitzerLueth1986,
  author    = {F{\"o}rster, Arnold and Spitzer, A. and L{\"u}th, H.},
  title     = {The adsorption of fluor-carbon complexes on GaAs(110) studied by electron energy loss spectroscopy},
  series = {Surface Science. 172 (1986), H. 1},
  journal   = {Surface Science. 172 (1986), H. 1},
  isbn      = {0039-6028},
  pages     = {174 -- 182},
  year      = {1986},
  language  = {en}
}
@article{FoersterLangeGerthsen1994,
  author    = {F{\"o}rster, Arnold and Lange, J. and Gerthsen, D.},
  title     = {The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes},
  series = {Journal of Physics D: Applied Physics. 27 (1994), H. 1},
  journal   = {Journal of Physics D: Applied Physics. 27 (1994), H. 1},
  isbn      = {0022-3727},
  pages     = {175 -- 178},
  year      = {1994},
  language  = {en}
}
@article{FoersterLayetLueth1988,
  author    = {F{\"o}rster, Arnold and Layet, J. M. and L{\"u}th, H.},
  title     = {The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) /},
  series = {Applied Physics A: Materials Science \& Processing. 47 (1988), H. 1},
  journal   = {Applied Physics A: Materials Science \& Processing. 47 (1988), H. 1},
  isbn      = {0947-8396},
  pages     = {95 -- 97},
  year      = {1988},
  language  = {en}
}