@article{FoersterMuellerLengeleretal.1995,
  author    = {F{\"o}rster, Arnold and M{\"u}ller, F. and Lengeler, B. and Sch{\"a}pers, T.},
  title     = {Electron-electron interaction in ballistic electron beams / F. M{\"u}ller ; B. Lengeler ; Th. Sch{\"a}pers ... A. F{\"o}rster...},
  series = {Physical Review B . 51 (1995), H. 8},
  journal   = {Physical Review B . 51 (1995), H. 8},
  isbn      = {0163-1829},
  pages     = {5099 -- 5105},
  year      = {1995},
  language  = {en}
}
@article{FoersterLauterBauser1995,
  author    = {F{\"o}rster, Arnold and Lauter, J. and Bauser, E.},
  title     = {Epitaxial gallium arsenide for nuclear radiation detector applications / J. Lauter ; E. Bauser ; A. F{\"o}rster ...},
  series = {Nuclear physics B / Proceedings supplements. 44 (1995), H. 1-3},
  journal   = {Nuclear physics B / Proceedings supplements. 44 (1995), H. 1-3},
  isbn      = {0920-5632},
  pages     = {381 -- 385},
  year      = {1995},
  language  = {en}
}
@article{FoersterRizziLueth1989,
  author    = {F{\"o}rster, Arnold and Rizzi, Angela and L{\"u}th, H.},
  title     = {Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. F{\"o}rster ; H. L{\"u}th},
  series = {Surface Science. 211 - 212 (1989)},
  journal   = {Surface Science. 211 - 212 (1989)},
  isbn      = {0039-6028},
  pages     = {620 -- 629},
  year      = {1989},
  language  = {en}
}
@article{FoersterLayetLueth1989,
  author    = {F{\"o}rster, Arnold and Layet, J. M. and L{\"u}th, H.},
  title     = {Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy},
  series = {Applied Surface Science. 41 - 42 (1989)},
  journal   = {Applied Surface Science. 41 - 42 (1989)},
  isbn      = {0169-4332},
  pages     = {306 -- 311},
  year      = {1989},
  language  = {en}
}
@inproceedings{FoersterStockMontanarietal.2006,
  author    = {F{\"o}rster, Arnold and Stock, J{\"u}rgen and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans},
  title     = {Fabrication and characterisation of GaAs Gunn Diode Chips for applications at 77 GHz in automotive industry},
  url       = {http://nbn-resolving.de/urn:nbn:de:hbz:a96-opus-1462},
  year      = {2006},
  abstract  = {GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.},
  subject      = {Biosensor},
  language  = {en}
}
@article{FoersterAdamMikulicsetal.2002,
  author    = {F{\"o}rster, Arnold and Adam, R. and Mikulics, M. and Schelten, J.},
  title     = {Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R.},
  series = {Applied Physics Letters. 81 (2002), H. 18},
  journal   = {Applied Physics Letters. 81 (2002), H. 18},
  isbn      = {1077-3118},
  pages     = {3485 -- 3487},
  year      = {2002},
  language  = {en}
}
@article{FoersterKicinCambeletal.2002,
  author    = {F{\"o}rster, Arnold and Kicin, S and Cambel, V. and Kuliffayova, M.},
  title     = {Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. Kicin, S.; Cambel, V.; Kuliffayova, M.; Gregusova, D.; Kovacova, E.; Novak, J.; Kostic, I.; Forster, A.},
  series = {Journal of Applied Physics. 91 (2002), H. 2},
  journal   = {Journal of Applied Physics. 91 (2002), H. 2},
  isbn      = {1089-7550},
  pages     = {878 -- 880},
  year      = {2002},
  language  = {en}
}
@article{VitusevichFoersterReetzetal.2000,
  author    = {Vitusevich, S. A. and F{\"o}rster, Arnold and Reetz, W. and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V.},
  title     = {Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode},
  series = {Nanotechnology. 11 (2000), H. 4},
  journal   = {Nanotechnology. 11 (2000), H. 4},
  isbn      = {1361-6528},
  pages     = {305 -- 308},
  year      = {2000},
  language  = {en}
}
@article{FoersterKohleickLueth1993,
  author    = {F{\"o}rster, Arnold and Kohleick, R. and L{\"u}th, H.},
  title     = {Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure / R. Kohleick ; A. F{\"o}rster ; H. L{\"u}th},
  series = {Physical Review B . 48 (1993), H. 20},
  journal   = {Physical Review B . 48 (1993), H. 20},
  isbn      = {0163-1829},
  pages     = {15138 -- 15143},
  year      = {1993},
  language  = {en}
}
@article{FoersterMikulicsSiebeetal.2002,
  author    = {F{\"o}rster, Arnold and Mikulics, M. and Siebe, F. and Fox, A.},
  title     = {Generation of 460 GHz radiation by photomixing in low-temperature-grown MBE GaAs. Mikulics, M.; Siebe, F.; Fox, A.; Marso, M.; Forster, A.; Stuer, H.; Schafer, F.; Gusten, R.; Kordos, P.},
  series = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza},
  journal   = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza},
  publisher = {IEEE Operations Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-7276-X},
  pages     = {129 -- 132},
  year      = {2002},
  language  = {en}
}