@article{MikulicsCamaraHardtetal.2004,
  author    = {Mikulics, M. and Camara, I. and Hardt, A. van der and Fox, A. and F{\"o}rster, Arnold and Gusten, R. and L{\"u}th, H. and Kordos, P.},
  title     = {Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs},
  series = {Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald},
  journal   = {Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald},
  publisher = {IEEE Operations Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-8335-7},
  pages     = {231 -- 234},
  year      = {2004},
  language  = {en}
}
@article{FoersterLentzenGerthsen1992,
  author    = {F{\"o}rster, Arnold and Lentzen, M. and Gerthsen, D.},
  title     = {Growth mode and strain relaxation during the initial stage of InxGa1-xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. F{\"o}rster ...},
  series = {Applied physics letters. 60 (1992), H. 1},
  journal   = {Applied physics letters. 60 (1992), H. 1},
  isbn      = {0003-6951},
  pages     = {74 -- 76},
  year      = {1992},
  language  = {en}
}
@article{FoersterTillmannGerthsen1995,
  author    = {F{\"o}rster, Arnold and Tillmann, K. and Gerthsen, D.},
  title     = {Growth morphology and misfit relaxation of MBE-grown In0.6 G0.4 As on GaAs(001) / K. Tillmann ; D. Gerthsen ; A. F{\"o}rster ...},
  series = {Thin solid films. 261 (1995), H. 1-2},
  journal   = {Thin solid films. 261 (1995), H. 1-2},
  isbn      = {0040-6090},
  pages     = {139 -- 147},
  year      = {1995},
  language  = {en}
}
@article{FoersterKlemradtFunkeetal.1996,
  author    = {F{\"o}rster, Arnold and Klemradt, U. and Funke, M. and Fromm, M},
  title     = {Growth-induced interface roughness of GaAs/AlAs-layers studied by X-ray scattering under grazing angles / U. Klemradt ; M. Funke ; M. Fromm ... A F{\"o}rster},
  series = {Physica B: condensed matter. 221 (1996), H. 1-4},
  journal   = {Physica B: condensed matter. 221 (1996), H. 1-4},
  isbn      = {0921-4526},
  pages     = {27 -- 33},
  year      = {1996},
  language  = {en}
}
@article{FoersterBetkoMorvicetal.1996,
  author    = {F{\"o}rster, Arnold and Betko, J. and Morvic, M. and Novak, J.},
  title     = {Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Nov{\´a}k ... A. F{\"o}rster ...},
  series = {Applied physics letters. 69 (1996), H. 17},
  journal   = {Applied physics letters. 69 (1996), H. 17},
  isbn      = {0003-6951},
  pages     = {2563 -- 2565},
  year      = {1996},
  language  = {en}
}
@article{FoersterOhlerDaniels1998,
  author    = {F{\"o}rster, Arnold and Ohler, C. and Daniels, C.},
  title     = {Heterojunction band offsets and Schottky-barrier heights: Tersoff's theory in the presence of strain / C. Ohler ; C. Daniels ; A. F{\"o}rster ...},
  series = {Physical review / B, Condensed matter and materials physics. 58 (1998), H. 12},
  journal   = {Physical review / B, Condensed matter and materials physics. 58 (1998), H. 12},
  isbn      = {1095-3795},
  pages     = {7864 -- 7871},
  year      = {1998},
  language  = {en}
}
@article{FoersterMontanariLepsaetal.2005,
  author    = {F{\"o}rster, Arnold and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans},
  title     = {High frequency investigation of graded gap injectors for GaAs Gunn diodes / Simone Montanari ; Arnold F{\"o}rster ; Mihail Ion Lepsa ; Hans L{\"u}th},
  series = {Solid-state electronics. 49 (2005), H. 2},
  journal   = {Solid-state electronics. 49 (2005), H. 2},
  isbn      = {0038-1101},
  pages     = {245 -- 250},
  year      = {2005},
  language  = {en}
}
@article{FoersterBruggerMeiners1991,
  author    = {F{\"o}rster, Arnold and Brugger, H. and Meiners, U.},
  title     = {High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. W{\"o}lk ... A. F{\"o}rster ...},
  series = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman},
  journal   = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman},
  publisher = {Inst. of Electrical and Electronics Engineers},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-0491-8},
  pages     = {39 -- ff.},
  year      = {1991},
  language  = {en}
}
@article{FoersterHuVerghese1996,
  author    = {F{\"o}rster, Arnold and Hu, Quing and Verghese, S.},
  title     = {High-frequency (f ~ 1 THz) studies of quantum-effect devices / Qing Hu ; S. Verghese ; R. A. Wyss ... A. F{\"o}rster},
  series = {Semiconductor science and technology. 11 (1996), H. 12},
  journal   = {Semiconductor science and technology. 11 (1996), H. 12},
  isbn      = {1361-6641},
  pages     = {1888 -- 1894},
  year      = {1996},
  language  = {en}
}
@article{FoersterMalindretosIndlekoferetal.2002,
  author    = {F{\"o}rster, Arnold and Malindretos, J{\"o}rg and Indlekofer, Klaus Michael and Lepsa, Mihail Ion},
  title     = {Homogeneity analysis of ion-implanted resonant tunnelling diodes for applications in digital logic circuits. Malindretos, J{\"o}rg; F{\"o}rster, Arno; Indlekofer, Klaus Michael; Lepsa, Mihail Ion; Hardtdegen, Hilde; Schmidt, Roland; Luth, Hans},
  series = {Superlattices and Microstructures. 31 (2002), H. 6},
  journal   = {Superlattices and Microstructures. 31 (2002), H. 6},
  isbn      = {0749-6036},
  pages     = {315 -- 325},
  year      = {2002},
  language  = {en}
}