@misc{BragardHueningKowalewski2023, author = {Bragard, Michael and H{\"u}ning, Felix and Kowalewski, Paul}, title = {Vorrichtung zur Relativlagenbestimmung [Offenlegungschrift]}, year = {2023}, abstract = {Die Erfindung betrifft eine Vorrichtung zur Bestimmung einer Relativlage zwischen einem feststehenden Teil und einem zu demselben in eine Bewegungsrichtung bewegbaren beweglichen Teil, wobei der feststehende Teil mit einem Wiegandsensor versehen ist, wobei der Wiegandsensor zwischen zwei gegenpolig zueinander ausgebildeten Permanentmagneten angeordnet ist und dass der bewegliche Teil eine Mehrzahl von beabstandet zueinander angeordneten Magnetisierungsstegen aus einem magnetisch leitenden Material aufweist, die in der Bewegungsrichtung zumindest eine gleich große Erstreckung aufweisen wie der Permanentmagnet, dass ein Abstand zwischen benachbarten Magnetisierungsstegen derart gew{\"a}hlt ist, dass in einer ersten Relativlage ein erster Permanentmagnet von einem der Magnetisierungsstege {\"u}berdeckt ist und ein zweiter Permanentmagnet nicht von einem der Magnetisierungsstege {\"u}berdeckt ist.}, language = {de} } @phdthesis{Bragard2012, author = {Bragard, Michael}, title = {The integrated emitter turn-off thyristor : an innovative MOS-gated high-power device. - (Aachener Beitr{\"a}ge des ISEA ; 62)}, publisher = {Shaker}, address = {Aachen}, isbn = {978-3-8440-1152-4}, pages = {III, 164 S. : Ill., graph. Darst.}, year = {2012}, abstract = {This thesis introduces the Integrated Emitter Turn-Off (IETO) Thyristor as a new high-power device. Known state-of-the-art research activities like the Dual GCT, the ETO thyristor and the ICT were presented and critically reviewed. A comparison with commercialized solutions identifies the pros and cons of each type of device family. Based on this analysis, the IETO structure is proposed, covering most benefits of each device class. In particular the combination of a MOS-assisted turn-off with a thyristor-based device allows a voltage-controlled MOS switching and the low on-state voltage of the thyristors. The following synthesis of an IETO device stands on a three-dimensional field of optimization spanned by electric, mechanical and thermal aspects. From an electric point of view, the lowest possible parasitic inductance and resistance within the commutation path are optimization criteria. The mechanical construction has to withstand the required contact pressure of multiple kilo Newtons. Finally, thermal borders limit the maximum average current of the device. FEM simulations covering these three aspects are performed for several design proposals. An IETO prototype is constructed and measurements on various test benches attest thermal, mechanical and electric performance. A local decoupling of the external driver stage and the presspack housing is presented by a cable connection. This separation enables a thermal and mechanical independence, which is advantageous in terms of vibrations and thermal cycles including increased reliability. The electric pulse performance of the prototype device is a factor of 3.1 above today''s solutions. In single-pulse measurements, a current up to 1600 A was successfully turned off at 115°C with an active silicon area of 823 mm². One reason for this increased turn-off capability is the extremely low-inductive construction. Additional functionality of the IETO thyristor like over-current self-protection and defined short-circuit failure state are successfully verified.}, language = {en} } @article{BragardConradvanHoeketal.2011, author = {Bragard, Michael and Conrad, M. and van Hoek, H. and De Doncker, R. W.}, title = {The integrated emitter turn-off thyristor (IETO) : an innovative thyristor-based high power semiconductor device using MOS assisted turn-off}, series = {IEEE transactions on industry applications}, volume = {47}, journal = {IEEE transactions on industry applications}, number = {5}, publisher = {IEEE}, address = {New York}, issn = {0093-9994}, doi = {10.1109/TIA.2011.2161432}, pages = {2175 -- 2182}, year = {2011}, language = {en} } @inproceedings{BragardConradDeDoncker2010, author = {Bragard, Michael and Conrad, M. and De Doncker, R. W.}, title = {The integrated emitter turn-off thyristor (IETO) : an innovative thyristor based high power semiconductor device using MOS assisted turn-off}, series = {2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]}, booktitle = {2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4244-5286-6 (Print)}, doi = {10.1109/ECCE.2010.5618410}, pages = {4551 -- 4557}, year = {2010}, language = {en} } @article{KoellenspergerBragardPlumetal.2009, author = {K{\"o}llensperger, P. and Bragard, Michael and Plum, T. and De Doncker, R. W.}, title = {The dual GCT : new high-power device using optimized GCT technology}, series = {IEEE transactions on industry applications}, volume = {45}, journal = {IEEE transactions on industry applications}, number = {5}, issn = {0093-9994}, doi = {10.1109/TIA.2009.2027364}, pages = {1754 -- 1762}, year = {2009}, language = {en} } @inproceedings{KoellenspergerBragardPlumetal.2007, author = {K{\"o}llensperger, P. and Bragard, Michael and Plum, T. and De Doncker, R. W.}, title = {The dual GCT : a new high-power device using optimized GCT technology}, series = {Conference record of the 2007 IEEE Industry Applications Conference : 42. IAS annual meeting ; September 23 - 27, 2007, New Orleans, Louisiana, USA}, booktitle = {Conference record of the 2007 IEEE Industry Applications Conference : 42. IAS annual meeting ; September 23 - 27, 2007, New Orleans, Louisiana, USA}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {978-1-4244-1260-0 (Online)}, doi = {10.1109/07IAS.2007.76}, pages = {358 -- 365}, year = {2007}, language = {en} } @article{BragardSoltauThomasetal.2010, author = {Bragard, Michael and Soltau, N. and Thomas, S. and De Doncker, R. W.}, title = {The balance of renewable sources and user demands in grids : power electronics for modular battery energy storage systems}, series = {IEEE transactions on power electronics}, volume = {25}, journal = {IEEE transactions on power electronics}, number = {12}, publisher = {IEEE}, address = {New York}, issn = {0885-8993}, doi = {10.1109/TPEL.2010.2085455}, pages = {3049 -- 3056}, year = {2010}, abstract = {The continuously growing amount of renewable sources starts compromising the stability of electrical grids. Contradictory to fossil fuel power plants, energy production of wind and photovoltaic (PV) energy is fluctuating. Although predictions have significantly improved, an outage of multi-MW offshore wind farms poses a challenging problem. One solution could be the integration of storage systems in the grid. After a short overview, this paper focuses on two exemplary battery storage systems, including the required power electronics. The grid integration, as well as the optimal usage of volatile energy reserves, is presented for a 5- kW PV system for home application, as well as for a 100- MW medium-voltage system, intended for wind farm usage. The efficiency and cost of topologies are investigated as a key parameter for large-scale integration of renewable power at medium- and low-voltage.}, language = {en} } @inproceedings{RuettersWeinheimerBragard2018, author = {R{\"u}tters, Ren{\´e} and Weinheimer, Marius and Bragard, Michael}, title = {Teaching Control Theory with a Simplified Helicopter Model and a Classroom Fitting Hardware Test-Bench}, series = {2018 IEEE 59th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)}, booktitle = {2018 IEEE 59th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)}, isbn = {978-1-5386-6903-7}, doi = {10.1109/RTUCON.2018.8659871}, year = {2018}, language = {en} } @inproceedings{BragardRongeDeDoncker2011, author = {Bragard, Michael and Ronge, C. and De Doncker, R. W.}, title = {Sandwich design of high-power thyristor based devices with integrated MOSFET structure}, series = {Proceedings of the 2011 - 14th - European Conference on Power Electronics and Applications (EPE 2011) : Aug. 30, 2011 - Sept. 1, 2011, Birmingham, United Kingdom}, booktitle = {Proceedings of the 2011 - 14th - European Conference on Power Electronics and Applications (EPE 2011) : Aug. 30, 2011 - Sept. 1, 2011, Birmingham, United Kingdom}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-61284-167-0 (Print)}, year = {2011}, language = {en} } @inproceedings{EndressBragard2017, author = {Endress, Tim and Bragard, Michael}, title = {Recording of efficiency-maps of low-power electric drive systems using a flexible matlab-based test bench}, series = {2017 IEEE 58th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)}, booktitle = {2017 IEEE 58th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)}, publisher = {IEEE}, address = {New York}, isbn = {978-1-5386-3846-0}, doi = {10.1109/RTUCON.2017.8124775}, pages = {5 Seiten}, year = {2017}, abstract = {This paper introduces a hardware setup to measure efficiency maps of low-power electric motors and their associated inverters. Here, the power of the device under test (DUT) ranges from some Watts to a few hundred Watts. The torque and speed of the DUT are measured independent of voltage and current in multiple load points. A Matlab-based software approach in combination with an open Texas-Instruments (TI) hardware setup ensures flexibility. Exemplarily, the efficiency field of a Permanent Magnet Synchronous Machine (PMSM) is measured to proof the concept. Brushless-DC (BLDC) motors can be tested as well. The nomenclature in this paper is based on the new European standard DIN EN 50598. Special attention is paid to the calculation of the measurement error.}, language = {en} }