@incollection{GligorevicEppleSchnell2011,
  author    = {Gligorevic, Snjezana and Epple, Ulrich and Schnell, Michael},
  title     = {The LDACS1 physical layer design},
  series = {Future aeronautical communications},
  booktitle = {Future aeronautical communications},
  publisher = {Intech},
  address   = {London},
  isbn      = {978-953-307-625-6},
  pages     = {317 -- 332},
  year      = {2011},
  language  = {en}
}
@article{FassbenderBuehler2000,
  author    = {Faßbender, Heinz and B{\"u}hler, Gerhard},
  title     = {The join of a geographical situation display system and a platform independent C2 information system},
  series = {Proceedings of the 2000 Command and Control Research and Technology Symposium, Juni 2000, Monterey, USA},
  journal   = {Proceedings of the 2000 Command and Control Research and Technology Symposium, Juni 2000, Monterey, USA},
  pages     = {1 -- 7},
  year      = {2000},
  language  = {en}
}
@article{FerreinSteinbauer2016,
  author    = {Ferrein, Alexander and Steinbauer, Gerald},
  title     = {The Interplay of Aldebaran and RoboCup},
  series = {KI - K{\"u}nstliche Intelligenz},
  volume    = {30},
  journal   = {KI - K{\"u}nstliche Intelligenz},
  number    = {3-4},
  publisher = {Springer},
  address   = {Berlin},
  issn      = {1610-1987},
  doi       = {10.1007/s13218-016-0440-1},
  pages     = {325 -- 326},
  year      = {2016},
  language  = {en}
}
@phdthesis{Bragard2012,
  author    = {Bragard, Michael},
  title     = {The integrated emitter turn-off thyristor : an innovative MOS-gated high-power device. - (Aachener Beitr{\"a}ge des ISEA ; 62)},
  publisher = {Shaker},
  address   = {Aachen},
  isbn      = {978-3-8440-1152-4},
  pages     = {III, 164 S. : Ill., graph. Darst.},
  year      = {2012},
  abstract  = {This thesis introduces the Integrated Emitter Turn-Off (IETO) Thyristor as a new high-power device. Known state-of-the-art research activities like the Dual GCT, the ETO thyristor and the ICT were presented and critically reviewed. A comparison with commercialized solutions identifies the pros and cons of each type of device family. Based on this analysis, the IETO structure is proposed, covering most benefits of each device class. In particular the combination of a MOS-assisted turn-off with a thyristor-based device allows a voltage-controlled MOS switching and the low on-state voltage of the thyristors. The following synthesis of an IETO device stands on a three-dimensional field of optimization spanned by electric, mechanical and thermal aspects. From an electric point of view, the lowest possible parasitic inductance and resistance within the commutation path are optimization criteria. The mechanical construction has to withstand the required contact pressure of multiple kilo Newtons. Finally, thermal borders limit the maximum average current of the device. FEM simulations covering these three aspects are performed for several design proposals. An IETO prototype is constructed and measurements on various test benches attest thermal, mechanical and electric performance. A local decoupling of the external driver stage and the presspack housing is presented by a cable connection. This separation enables a thermal and mechanical independence, which is advantageous in terms of vibrations and thermal cycles including increased reliability. The electric pulse performance of the prototype device is a factor of 3.1 above today''s solutions. In single-pulse measurements, a current up to 1600 A was successfully turned off at 115°C with an active silicon area of 823 mm². One reason for this increased turn-off capability is the extremely low-inductive construction. Additional functionality of the IETO thyristor like over-current self-protection and defined short-circuit failure state are successfully verified.},
  language  = {en}
}
@article{BragardConradvanHoeketal.2011,
  author    = {Bragard, Michael and Conrad, M. and van Hoek, H. and De Doncker, R. W.},
  title     = {The integrated emitter turn-off thyristor (IETO) : an innovative thyristor-based high power semiconductor device using MOS assisted turn-off},
  series = {IEEE transactions on industry applications},
  volume    = {47},
  journal   = {IEEE transactions on industry applications},
  number    = {5},
  publisher = {IEEE},
  address   = {New York},
  issn      = {0093-9994},
  doi       = {10.1109/TIA.2011.2161432},
  pages     = {2175 -- 2182},
  year      = {2011},
  language  = {en}
}
@inproceedings{BragardConradDeDoncker2010,
  author    = {Bragard, Michael and Conrad, M. and De Doncker, R. W.},
  title     = {The integrated emitter turn-off thyristor (IETO) : an innovative thyristor based high power semiconductor device using MOS assisted turn-off},
  series = {2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]},
  booktitle = {2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-4244-5286-6 (Print)},
  doi       = {10.1109/ECCE.2010.5618410},
  pages     = {4551 -- 4557},
  year      = {2010},
  language  = {en}
}
@article{HagemannStumpeWagneretal.1985,
  author    = {Hagemann, Hans-J{\"u}rgen and Stumpe, R. and Wagner, D. and B{\"a}uerle, D.},
  title     = {The influence of contact effects on the dielectric behavior of diffuse phase transitions. Stumpe, R.; Wagner, D.; B{\"a}uerle, D.; Hagemann, H. J.},
  series = {Ferroelectrics : the international journal devoted to the theoretical, experimental, and applied aspects of ferroelectrics and related materials / Letters section. 4 (1985)},
  journal   = {Ferroelectrics : the international journal devoted to the theoretical, experimental, and applied aspects of ferroelectrics and related materials / Letters section. 4 (1985)},
  isbn      = {0731-5171},
  pages     = {143 -- 147},
  year      = {1985},
  language  = {en}
}
@article{HeuermannSchiek1992,
  author    = {Heuermann, Holger and Schiek, Burkhard},
  title     = {The In-Fixture Calibration Procedure Line-Network-Network-LNN},
  series = {Conference proceedings : monday 6th to thursday 9th september 1993, Palacio de Congresos, Madrid, Spain ; [the international conference and exhibition designed for the Microwave Community]},
  journal   = {Conference proceedings : monday 6th to thursday 9th september 1993, Palacio de Congresos, Madrid, Spain ; [the international conference and exhibition designed for the Microwave Community]},
  publisher = {Reed Exhibition Companies},
  address   = {Tunbridge Wells},
  isbn      = {0-946821-23-2},
  pages     = {500 -- 505},
  year      = {1992},
  language  = {en}
}
@book{Huening2014,
  author    = {H{\"u}ning, Felix},
  title     = {The fundamentals of electrical engineering for mechatronics},
  publisher = {de Gruyter},
  address   = {Berlin},
  isbn      = {978-3-11-034991-7 (Druckausg.)},
  pages     = {IX, 208 S.},
  year      = {2014},
  language  = {en}
}
@inproceedings{WolfLenz2015,
  author    = {Wolf, Martin and Lenz, Laura L.},
  title     = {The economic effectiveness of serious games in the healthcare environment : application and evaluation of the Comparative Transformation Model (CTM)},
  series = {IEEE 3rd International Conference on Serious Games and Applications for Health : SeGAH 2014 ; Rio de Janeiro, Brazil, May 14 - 16},
  booktitle = {IEEE 3rd International Conference on Serious Games and Applications for Health : SeGAH 2014 ; Rio de Janeiro, Brazil, May 14 - 16},
  publisher = {IEEE [u.a.]},
  address   = {Piscataway, NJ},
  isbn      = {978-1-4799-4823-9},
  doi       = {10.1109/SeGAH.2014.7067089},
  pages     = {135 -- 142},
  year      = {2015},
  language  = {en}
}