@inproceedings{KoellenspergerBragardPlumetal.2007,
  author    = {K{\"o}llensperger, P. and Bragard, Michael and Plum, T. and De Doncker, R. W.},
  title     = {The dual GCT : a new high-power device using optimized GCT technology},
  series = {Conference record of the 2007 IEEE Industry Applications Conference : 42. IAS annual meeting ; September 23 - 27, 2007, New Orleans, Louisiana, USA},
  booktitle = {Conference record of the 2007 IEEE Industry Applications Conference : 42. IAS annual meeting ; September 23 - 27, 2007, New Orleans, Louisiana, USA},
  publisher = {IEEE Operations Center},
  address   = {Piscataway, NJ},
  isbn      = {978-1-4244-1260-0 (Online)},
  doi       = {10.1109/07IAS.2007.76},
  pages     = {358 -- 365},
  year      = {2007},
  language  = {en}
}
@misc{BragardBuddeHenteetal.2008,
  author    = {Bragard, Michael and Budde, W. O. and Hente, D. and Jacobs, J. H. A. M. and Waffenschmidt, E.},
  title     = {Lighting system : [patent of invention]},
  publisher = {WIPO / United States Patent and Trademark Office},
  address   = {Geneva / Alexandria, VA},
  pages     = {32 S. : graph. Darst.},
  year      = {2008},
  language  = {en}
}
@article{KoellenspergerBragardPlumetal.2009,
  author    = {K{\"o}llensperger, P. and Bragard, Michael and Plum, T. and De Doncker, R. W.},
  title     = {The dual GCT : new high-power device using optimized GCT technology},
  series = {IEEE transactions on industry applications},
  volume    = {45},
  journal   = {IEEE transactions on industry applications},
  number    = {5},
  issn      = {0093-9994},
  doi       = {10.1109/TIA.2009.2027364},
  pages     = {1754 -- 1762},
  year      = {2009},
  language  = {en}
}
@inproceedings{BragardSoltauDeDonckeretal.2010,
  author    = {Bragard, Michael and Soltau, N. and De Doncker, R. W. and Schmiegel, A.},
  title     = {Design and implementation of a 5 kW photovoltaic system with li-ion battery and additional DC-DC converter},
  series = {2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]},
  booktitle = {2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-4244-5286-6 (Print)},
  doi       = {10.1109/ECCE.2010.5618220},
  pages     = {2944 -- 2949},
  year      = {2010},
  language  = {en}
}
@inproceedings{BragardConradDeDoncker2010,
  author    = {Bragard, Michael and Conrad, M. and De Doncker, R. W.},
  title     = {The integrated emitter turn-off thyristor (IETO) : an innovative thyristor based high power semiconductor device using MOS assisted turn-off},
  series = {2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]},
  booktitle = {2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-4244-5286-6 (Print)},
  doi       = {10.1109/ECCE.2010.5618410},
  pages     = {4551 -- 4557},
  year      = {2010},
  language  = {en}
}
@article{BragardSoltauThomasetal.2010,
  author    = {Bragard, Michael and Soltau, N. and Thomas, S. and De Doncker, R. W.},
  title     = {The balance of renewable sources and user demands in grids : power electronics for modular battery energy storage systems},
  series = {IEEE transactions on power electronics},
  volume    = {25},
  journal   = {IEEE transactions on power electronics},
  number    = {12},
  publisher = {IEEE},
  address   = {New York},
  issn      = {0885-8993},
  doi       = {10.1109/TPEL.2010.2085455},
  pages     = {3049 -- 3056},
  year      = {2010},
  abstract  = {The continuously growing amount of renewable sources starts compromising the stability of electrical grids. Contradictory to fossil fuel power plants, energy production of wind and photovoltaic (PV) energy is fluctuating. Although predictions have significantly improved, an outage of multi-MW offshore wind farms poses a challenging problem. One solution could be the integration of storage systems in the grid. After a short overview, this paper focuses on two exemplary battery storage systems, including the required power electronics. The grid integration, as well as the optimal usage of volatile energy reserves, is presented for a 5- kW PV system for home application, as well as for a 100- MW medium-voltage system, intended for wind farm usage. The efficiency and cost of topologies are investigated as a key parameter for large-scale integration of renewable power at medium- and low-voltage.},
  language  = {en}
}
@inproceedings{BragardRongeDeDoncker2011,
  author    = {Bragard, Michael and Ronge, C. and De Doncker, R. W.},
  title     = {Sandwich design of high-power thyristor based devices with integrated MOSFET structure},
  series = {Proceedings of the 2011 - 14th - European Conference on Power Electronics and Applications (EPE 2011) : Aug. 30, 2011 - Sept. 1, 2011, Birmingham, United Kingdom},
  booktitle = {Proceedings of the 2011 - 14th - European Conference on Power Electronics and Applications (EPE 2011) : Aug. 30, 2011 - Sept. 1, 2011, Birmingham, United Kingdom},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-61284-167-0 (Print)},
  year      = {2011},
  language  = {en}
}
@inproceedings{BragardGottschlichDeDoncker2011,
  author    = {Bragard, Michael and Gottschlich, J. and De Doncker, R. W.},
  title     = {Design and realization of a credit card size driver stage for high power thyristor based devices with integrated MOS structure},
  series = {2011 IEEE 8th International Conference on Power Electronics and ECCE Asia (ICPE \& ECCE 2011) : Jeju, South Korea, 30 May 2011 - 3 June 2011 / [co-sponsored by the Korean Institute of Power Electronics ...]},
  booktitle = {2011 IEEE 8th International Conference on Power Electronics and ECCE Asia (ICPE \& ECCE 2011) : Jeju, South Korea, 30 May 2011 - 3 June 2011 / [co-sponsored by the Korean Institute of Power Electronics ...]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-61284-958-4 (Print)},
  doi       = {10.1109/ICPE.2011.5944661},
  pages     = {1182 -- 1189},
  year      = {2011},
  language  = {en}
}
@article{BragardConradvanHoeketal.2011,
  author    = {Bragard, Michael and Conrad, M. and van Hoek, H. and De Doncker, R. W.},
  title     = {The integrated emitter turn-off thyristor (IETO) : an innovative thyristor-based high power semiconductor device using MOS assisted turn-off},
  series = {IEEE transactions on industry applications},
  volume    = {47},
  journal   = {IEEE transactions on industry applications},
  number    = {5},
  publisher = {IEEE},
  address   = {New York},
  issn      = {0093-9994},
  doi       = {10.1109/TIA.2011.2161432},
  pages     = {2175 -- 2182},
  year      = {2011},
  language  = {en}
}
@article{BragardvanHoekDeDoncker2012,
  author    = {Bragard, Michael and van Hoek, H. and De Doncker, R. W.},
  title     = {A major design step in IETO concept realization that allows overcurrent protection and pushes limits of switching performance},
  series = {IEEE transactions on power electronics},
  volume    = {27},
  journal   = {IEEE transactions on power electronics},
  number    = {9},
  publisher = {IEEE},
  address   = {New York},
  issn      = {0885-8993},
  doi       = {10.1109/TPEL.2012.2189136},
  pages     = {4163 -- 4171},
  year      = {2012},
  abstract  = {This paper presents the latest prototype of the integrated emitter turn-off thyristor concept, which potentially ranks among thyristor high-power devices like the gate turn-off thyristor and the integrated gate-commutated thyristor (IGCT). Due to modifications of the external driver stage and mechanical press-pack design optimization, this prototype allows for full device characterization. The turn-off capability was increased to 1600 A with an active silicon area of 823mm2 . This leads to a transient peak power of 672.1kW/cm² . Within this paper, measurements and concept assessment are presented and a comparison to state-of-the-art IGCT devices is provided.},
  language  = {en}
}