@inproceedings{BragardRongeDeDoncker2011,
  author    = {Bragard, Michael and Ronge, C. and De Doncker, R. W.},
  title     = {Sandwich design of high-power thyristor based devices with integrated MOSFET structure},
  series = {Proceedings of the 2011 - 14th - European Conference on Power Electronics and Applications (EPE 2011) : Aug. 30, 2011 - Sept. 1, 2011, Birmingham, United Kingdom},
  booktitle = {Proceedings of the 2011 - 14th - European Conference on Power Electronics and Applications (EPE 2011) : Aug. 30, 2011 - Sept. 1, 2011, Birmingham, United Kingdom},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-61284-167-0 (Print)},
  year      = {2011},
  language  = {en}
}
@inproceedings{BragardGottschlichDeDoncker2011,
  author    = {Bragard, Michael and Gottschlich, J. and De Doncker, R. W.},
  title     = {Design and realization of a credit card size driver stage for high power thyristor based devices with integrated MOS structure},
  series = {2011 IEEE 8th International Conference on Power Electronics and ECCE Asia (ICPE \& ECCE 2011) : Jeju, South Korea, 30 May 2011 - 3 June 2011 / [co-sponsored by the Korean Institute of Power Electronics ...]},
  booktitle = {2011 IEEE 8th International Conference on Power Electronics and ECCE Asia (ICPE \& ECCE 2011) : Jeju, South Korea, 30 May 2011 - 3 June 2011 / [co-sponsored by the Korean Institute of Power Electronics ...]},
  publisher = {IEEE},
  address   = {Piscataway, NJ},
  isbn      = {978-1-61284-958-4 (Print)},
  doi       = {10.1109/ICPE.2011.5944661},
  pages     = {1182 -- 1189},
  year      = {2011},
  language  = {en}
}
@article{BragardConradvanHoeketal.2011,
  author    = {Bragard, Michael and Conrad, M. and van Hoek, H. and De Doncker, R. W.},
  title     = {The integrated emitter turn-off thyristor (IETO) : an innovative thyristor-based high power semiconductor device using MOS assisted turn-off},
  series = {IEEE transactions on industry applications},
  volume    = {47},
  journal   = {IEEE transactions on industry applications},
  number    = {5},
  publisher = {IEEE},
  address   = {New York},
  issn      = {0093-9994},
  doi       = {10.1109/TIA.2011.2161432},
  pages     = {2175 -- 2182},
  year      = {2011},
  language  = {en}
}
@misc{BragardDeDonckerMuraetal.2011,
  author    = {Bragard, Michael and De Doncker, R. W. and Mura, F and Dick, C.},
  title     = {Halbleiterbauelement und Verfahren zur Herstellung desselben [Offenlegungsschrift]},
  publisher = {Deutsches Patent- und Markenamt / Europ{\"a}isches Patentamt / WIPO},
  address   = {M{\"u}nchen / Den Hague / Geneva},
  pages     = {10 S. / 23 S. : graph. Darst.},
  year      = {2011},
  language  = {de}
}