@inproceedings{PlatenPoghossianSchoening2006,
  author    = {Platen, Johannes and Poghossian, Arshak and Sch{\"o}ning, Michael Josef},
  title     = {Microstructured Nanostructures - nanostructuring by means of conventional photolithography and layer-expansion technique},
  url       = {http://nbn-resolving.de/urn:nbn:de:hbz:a96-opus-1477},
  year      = {2006},
  abstract  = {A new and simple method for nanostructuring using conventional photolithography and layer expansion or pattern-size reduction technique is presented, which can further be applied for the fabrication of different nanostructures and nano-devices. The method is based on the conversion of a photolithographically patterned metal layer to a metal-oxide mask with improved pattern-size resolution using thermal oxidation. With this technique, the pattern size can be scaled down to several nanometer dimensions. The proposed method is experimentally demonstrated by preparing nanostructures with different configurations and layouts, like circles, rectangles, trapezoids, "fluidic-channel"-, "cantilever"- and meander-type structures.},
  subject      = {Biosensor},
  language  = {en}
}
@article{KloockPoghossianSchumacheretal.2006,
  author    = {Kloock, Joachim P. and Poghossian, Arshak and Schumacher, K. and Rosenkranz, C. and Schultze, J. W. and M{\"u}ller-Veggian, Mattea and Sch{\"o}ning, Michael Josef},
  title     = {Funktionspr{\"u}fung und Charakterisierung von ionensensitiven Feldeffekttransistoren (ISFETs) auf Waferebene mittels Mikrotropfenzelle f{\"u}r den zuk{\"u}nftigen Einsatz in der Sensorproduktion},
  series = {Sensoren und Messsysteme 2006 : Vortr{\"a}ge der 13. ITG/GMA-Fachtagung vom 13. bis 14. M{\"a}rz 2006 in Freiburg/Breisgau / Veranst.: Informationstechnische Gesellschaft im VDE (ITG) ; VDE/VDI-Gesellschaft Mess- und Automatisierungstechnik (GMA). Wiss. Tagungsleitung: L. M. Reindl},
  journal   = {Sensoren und Messsysteme 2006 : Vortr{\"a}ge der 13. ITG/GMA-Fachtagung vom 13. bis 14. M{\"a}rz 2006 in Freiburg/Breisgau / Veranst.: Informationstechnische Gesellschaft im VDE (ITG) ; VDE/VDI-Gesellschaft Mess- und Automatisierungstechnik (GMA). Wiss. Tagungsleitung: L. M. Reindl},
  publisher = {VDE-Verl.},
  address   = {Berlin},
  isbn      = {3-8007-2939-3},
  pages     = {257 -- 260},
  year      = {2006},
  language  = {de}
}
@incollection{SchoeningWagnerPoghossianetal.2018,
  author    = {Sch{\"o}ning, Michael Josef and Wagner, Torsten and Poghossian, Arshak and Miyamoto, K.I. and Werner, C.F. and Krause, S. and Yoshinobu, T.},
  title     = {Light-addressable potentiometric sensors for (bio-)chemical sensing and imaging},
  series = {Encyclopedia of Interfacial Chemistry: Surface Science and Electrochemistry. Vol. 7},
  booktitle = {Encyclopedia of Interfacial Chemistry: Surface Science and Electrochemistry. Vol. 7},
  publisher = {Elsevier},
  address   = {Amsterdam},
  isbn      = {9780128097397},
  pages     = {295 -- 308},
  year      = {2018},
  language  = {en}
}
@article{PoghossianYoshinobuSimonisetal.2001,
  author    = {Poghossian, Arshak and Yoshinobu, Tatsuo and Simonis, A. and Ecken, H. and L{\"u}th, Hans and Sch{\"o}ning, Michael Josef},
  title     = {Penicillin detection by means of field-effect based sensors: EnFET, capacitive EIS sensor or LAPS?},
  series = {Sensors and Actuators B. 78 (2001), H. 1-3},
  journal   = {Sensors and Actuators B. 78 (2001), H. 1-3},
  isbn      = {0925-4005},
  pages     = {237 -- 242},
  year      = {2001},
  language  = {en}
}
@inproceedings{SchoeningAbouzarHanetal.2006,
  author    = {Sch{\"o}ning, Michael Josef and Abouzar, Maryam H. and Han, Y. and Ingebrandt, S. and Offenh{\"a}usser, A. and Poghossian, Arshak},
  title     = {Markierungsfreie DNA-Detektion mit Silizium-Feldeffektsensoren - Messeffekte oder Artefakte?},
  series = {Sensoren und Mess-Systeme 2006 : Vortr{\"a}ge der 13. ITG/GMA-Fachtagung vom 13. bis 14.3.2006 in Freiburg/Breisgau},
  booktitle = {Sensoren und Mess-Systeme 2006 : Vortr{\"a}ge der 13. ITG/GMA-Fachtagung vom 13. bis 14.3.2006 in Freiburg/Breisgau},
  publisher = {VDE Verl.},
  address   = {Berlin},
  isbn      = {3-8007-2939-3},
  pages     = {443 -- 446},
  year      = {2006},
  language  = {de}
}
@article{PoghossianSchoening2007,
  author    = {Poghossian, Arshak and Sch{\"o}ning, Michael Josef},
  title     = {Chemical and biological field-effect sensors for liquids - a status report},
  series = {Handbook of biosensors and biochips / ed. Robert S. Marks ... Bd. 1},
  journal   = {Handbook of biosensors and biochips / ed. Robert S. Marks ... Bd. 1},
  publisher = {Wiley},
  address   = {Chichester},
  isbn      = {978-0-470-01905-4},
  pages     = {395 -- 412},
  year      = {2007},
  language  = {en}
}
@article{StaatHeitzer1999,
  author    = {Staat, Manfred and Heitzer, M.},
  title     = {FEM-computation of load carrying capacity of highly loaded passive components by direct methods. Heitzer, M. ; Staat, M.},
  series = {Nuclear Engineering and Design. 193 (1999), H. 3},
  journal   = {Nuclear Engineering and Design. 193 (1999), H. 3},
  isbn      = {0029-5493},
  pages     = {349 -- 358},
  year      = {1999},
  language  = {en}
}
@inproceedings{StaatHeitzerReindersetal.2001,
  author    = {Staat, Manfred and Heitzer, Michael and Reinders, H. and Schubert, F.},
  title     = {Einspielen und Ratchetting bei Zug- und Torsionsbelastung: Analyse und Experimente},
  year      = {2001},
  abstract  = {Traglast- und Einspielanalysen sind vereinfachte doch exakte Verfahren der klassischen Plastizit{\"a}tstheorie, die neben ausreichender Verformbarkeit keine einschr{\"a}nkenden Voraussetzungen beinhalten. Die Vereinfachungen betreffen die Beschaffung der Daten und Modelle f{\"u}r Details der Lastgeschichte und des Stoffverhaltens. Eine FEM-basierte Traglast- und Einspielanalyse f{\"u}r ideal plastisches Material wurde auf ein kinematisch verfestigendes Materialgesetz erweitert und in das Finite Element Programm PERMAS implementiert. In einem einfachen Zug-Torsionsexperiment wurde eine Hohlprobe mit konstanter Torsion und zyklischer Zugbelastung beansprucht, um die neue Implementierung zu verifizieren. Es konnte gezeigt werden, dass die Einspielanalyse gut mit den experimentellen Ergebnissen {\"u}bereinstimmt. Bei Verfestigung lassen sich wesentlich gr{\"o}ßere Sicherheiten nachweisen. Dieses Potential bedarf weiterer experimenteller Absicherung. Parallel dazu ist die Eisnpieltheorie auf fortschrittliche Verfestigungsans{\"a}tze zu erweitern.},
  subject      = {Zug-Druck-Beanspruchung},
  language  = {de}
}
@article{PoghossianWeilCherstvyetal.2013,
  author    = {Poghossian, Arshak and Weil, M. and Cherstvy, A. G. and Sch{\"o}ning, Michael Josef},
  title     = {Electrical monitoring of polyelectrolyte multilayer formation by means of capacitive field-effect devices},
  series = {Analytical and bioanalytical chemistry},
  volume    = {405},
  journal   = {Analytical and bioanalytical chemistry},
  number    = {20},
  publisher = {Springer},
  address   = {Berlin},
  issn      = {1432-1130 ; 1618-2642},
  doi       = {10.1007/s00216-013-6951-9},
  pages     = {6425 -- 6436},
  year      = {2013},
  abstract  = {The semiconductor field-effect platform represents a powerful tool for detecting the adsorption and binding of charged macromolecules with direct electrical readout. In this work, a capacitive electrolyte-insulator-semiconductor (EIS) field-effect sensor consisting of an Al-p-Si-SiO2 structure has been applied for real-time in situ electrical monitoring of the layer-by-layer formation of polyelectrolyte (PE) multilayers (PEM). The PEMs were deposited directly onto the SiO2 surface without any precursor layer or drying procedures. Anionic poly(sodium 4-styrene sulfonate) and cationic weak polyelectrolyte poly(allylamine hydrochloride) have been chosen as a model system. The effect of the ionic strength of the solution, polyelectrolyte concentration, number and polarity of the PE layers on the characteristics of the PEM-modified EIS sensors have been studied by means of capacitance-voltage and constant-capacitance methods. In addition, the thickness, surface morphology, roughness and wettabilityof the PE mono- and multilayers have been characterised by ellipsometry, atomic force microscopy and water contact-angle methods, respectively. To explain potential oscillations on the gate surface and signal behaviour of the capacitive field-effect EIS sensor modified with a PEM, a simplified electrostatic model that takes into account the reduced electrostatic screening of PE charges by mobile ions within the PEM has been proposed and discussed.},
  language  = {en}
}
@article{SchoeningPoghossian2002,
  author    = {Sch{\"o}ning, Michael Josef and Poghossian, Arshak},
  title     = {Recent advances in biologically sensitive field-effect transistors (BioFETs)},
  series = {Analyst. 127 (2002)},
  journal   = {Analyst. 127 (2002)},
  isbn      = {0003-2654},
  pages     = {1137 -- 1151},
  year      = {2002},
  language  = {en}
}